Relationship between annealing temperature and thermal stress - Details

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EI Scopus PKU CSCD

Abstract：

The　residual　strains　and　stresses　of　1　μm/0.5　μm　aluminum　interconnects　are　observed　by　using　two　dimension　XRD.　The　tensile　stress　of　the　deposited　interconnects　decreases　with　increasing　interconnect　width.　The　longitudinal　stress　is　obvious　lager　than　transverse　stress.　Stresses　in　every　directions　decrease　after　2.5　h　annealing.　The　decreasing　amplitude　of　l　μm-aluminum　is　much　lager　than　that　of　0.5　μm.　The　image　quality　(IQ)　of　Kikuch　is　carried　out　by　using　EBSD　fore-and-aft　annealing.　The　result　reveals　that　lattice　distortion　decreases　by　annealing,　and　the　stress　is　released.

Keyword：

Aluminum Tensile stress Image quality Thermal stress X ray diffraction analysis Integrated circuits Joining Annealing Residual stresses

Author Community：

[ 1 ] [Wu, Yuehua]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Li, Zhiguo]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Liu, Zhimin]College of Material Science and Engineering, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Ji, Yuan]College of Material Science and Engineering, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Hu, Xiuzhen]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 6 ] [Liao, Jingning]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China