A　two-step　etching　technology　is　used　and　the　optimized　etching　parameter　is　found　by　experiment　to　remove　etching　damage　in　GaN-LEDs.　The　PL　intensity　of　the　sample　etched　by　ICP　with　a　power　of　750　W　is　decreased　a　little.　The　thickness　of　the　etch　damage　layer　is　less　than　25　nm.　The　forward　turn-on　voltage　and　reverse　leakage　current　of　the　LED　that　was　etched　by　the　two-step　etching　technology　are　reduced　noticeably.　The　EL　intensity　is　increased,　indicating　that　the　leakage　current　and　the　rate　of　nonradiative　recombination　both　decreased.　The　optical　efficiency　and　device　reliability　are　also　improved.