Effects of sapphire substrate mis-cut angle on the properties of GaN films - Details

Author：

Indexed by：

EI Scopus PKU CSCD

Abstract：

The　undoped　GaN　films　were　grown　on　mis-cut　sapphire　substrates　with　different　angle　(0-0.3°)　by　MOCVD.　Samples　were　investigated　by　microscopy,　double　crystal　X-ray　diffractometry　(DCXRD),　photoluminescence　(PL),　hall　technique　to　character　their　morphological,　crystal　properties.　The　results　revealed　that　the　dislocation　density　of　the　GaN　films　decreased　by　using　a　suitable　angle　of　mis-cut　sapphire　substrate.　With　an　angle　of　0.2°,　the　best　surface　morphological　and　crystal　quality　of　the　GaN　films　can　be　obtained.

Keyword：

X ray diffraction analysis Morphology Sapphire Semiconducting gallium compounds Gallium nitride Metallorganic chemical vapor deposition Thin films Photoluminescence

Author Community：

[ 1 ] [Niu, Nan-Hui]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Wang, Huai-Bing]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Liu, Jian-Ping]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Liu, Nai-Xin]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Xing, Yan-Hui]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 6 ] [Li, Tong]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 7 ] [Zhang, Nian-Guo]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 8 ] [Han, Jun]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 9 ] [Deng, Jun]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China
[ 10 ] [Shen, Guang-Di]Beijing Optoelectronic Technology Laboratory, Institute of Information, Beijing University of Technology, Beijing 100022, China

Reprint Author's Address：

Email：

Show more details

Related Keywords：

Influence of growth time of AlN interfacial layer on electrical properties of AlGaN/AlN/GaN HEMT materials
2014，Chinese Journal of Luminescence
Effects of growth interruption on the properties of InGaN/GaN MQWs grown by MOCVD
2007，Journal of Optoelectronics Laser
Investigation of non-doped GaN grown on sapphire substrate
2012，Chinese Journal of Luminescence
Integration of GaN thin films with silicon substrates by fusion bonding and laser lift-off
2006，Chinese Optics Letters

Source ：

Journal of Functional Materials

ISSN： 1001-9731

Year： 2006

Issue： 12

Volume： 37

Page： 1914-1916

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 6

Affiliated Colleges：

信息科学技术学院本学院/部未明确归属的数据

Get Fulltext

Library Discovery Baidu Scholar Search Engineering Village

Type
Departments

All Years Choose Year From to