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Author:

Ying, Minju (Ying, Minju.) | Du, Xiaolong (Du, Xiaolong.) | Liu, Yuzi (Liu, Yuzi.) | Zeng, Zhaoquan (Zeng, Zhaoquan.) | Mei, Zengxia (Mei, Zengxia.) | Zheng, Hao (Zheng, Hao.) | Yuan, Hongtao (Yuan, Hongtao.) | Jia, Jinfeng (Jia, Jinfeng.) | Xue, Qikun (Xue, Qikun.) | Zhang, Ze (Zhang, Ze.)

Indexed by:

EI Scopus PKU CSCD

Abstract:

By using plasma-assisted radio-frequency molecular beam epitaxy, the influence of substrate surface preconditiong and growth temperature on in-plane and polar orientations and surface morphology of ZnO thin films on LSAT(111) substrates are investigated. Rotation domains are observed in ZnO film grown at low temperature, while single-domain O-polar ZnO has been obtained with oxygen radicals pretreatment and high growth temperature. The origin of rotation domains in ZnO thin film is also discussed.

Keyword:

Zinc oxide Plasmas Rotation Temperature Surfaces Semiconducting films Molecular beam epitaxy Oxygen Substrates

Author Community:

  • [ 1 ] [Ying, Minju]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • [ 2 ] [Du, Xiaolong]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • [ 3 ] [Liu, Yuzi]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • [ 4 ] [Zeng, Zhaoquan]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • [ 5 ] [Mei, Zengxia]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • [ 6 ] [Zheng, Hao]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • [ 7 ] [Yuan, Hongtao]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • [ 8 ] [Jia, Jinfeng]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • [ 9 ] [Xue, Qikun]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • [ 10 ] [Zhang, Ze]Beijing University of Technology, Beijing 100022, China

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Source :

Chinese Journal of Semiconductors

ISSN: 0253-4177

Year: 2005

Issue: SUPPL.

Volume: 26

Page: 82-86

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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