The　polarity　of　the　ZnO　film　grown　on　sapphire　using　an　ultra-thin　Ga　wetting　layer　has　been　investigated　by　electron　energy-loss　spectroscopy　(EELS).　The　intensity　of　the　oxygen　K-edge　in　electron　energy-loss　spectrum　from　the　ZnO　film　shows　a　prominent　difference　when　the　film　orientation　changes　from　the　(0002)　Bragg　condition　to　the　(0002)　Bragg　condition.　The　EELS　study　reveals　that　the　ZnO　film　with　very　thin　Ga　wetting　layer　has　the　[0001]　polarity,　which　is　further　confirmed　by　the　conventional　convergent　beam　electron　diffraction　method.　©　2003　Elsevier　B.V.　All　rights　reserved.