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Abstract：
To design a high gain amplifier at V-band using 130 nm CMOS process, the gain-boosted technique is adopted to increase the maximum achievable gain (Gmax). Impedance matching synthesis is investigated for input and output matching circuits based on transmission lines. By adopting appropriate transistor size, a single stage amplifier can achieve the maximum gain of 10 dB at 53 GHz. © 2016 IEEE.
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Year： 2016
Language： English
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WoS CC Cited Count： 0
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ESI Highly Cited Papers on the List： 0 Unfold All
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30 Days PV： 8
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