Luminescence properties of GaAs quantum dot-in-nanowire structure for quantum photonics - Details

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Abstract：

We　investigate　light　characters　of　GaAs　quantum　dot-in-nanowire　structure　by　cathodoluminscence.　Exciton　intensity　of　QDs　is　∼5　times　stronger　than　the　nanowire.　Promising　properties　attribute　to　cavity　enhancement　and　quantum　confinement　by　surrounding　AlGaAs　barriers.　©　OSA　2015.

Keyword：

Nanocrystals Luminescence III-V semiconductors Semiconductor quantum dots Semiconducting gallium Nanowires Aluminum alloys Gallium arsenide Integrated optoelectronics Semiconductor alloys Aluminum gallium arsenide

Author Community：

[ 1 ] [Wang, Li]Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing; 100124, China
[ 2 ] [Yu, Ying]State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China
[ 3 ] [Wei, Bin]Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing; 100124, China
[ 4 ] [Mao, Shengcheng]Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing; 100124, China
[ 5 ] [Han, Xiaodong]Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing; 100124, China
[ 6 ] [Niu, Zhichuan]State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China
[ 7 ] [Ji, Yuan]Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing; 100124, China

Reprint Author's Address：

[ji, yuan]institute of microstructure and properties of advanced materials, beijing university of technology, beijing; 100124, china

Email：

jiyuan@bjut.edu.cn

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Related Keywords：

Luminescence properties of GaAs quantum Dot-in-Nanowire structure for quantum photonics
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Source ：

Year： 2015

Language： English

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 9

Affiliated Colleges：

材料科学与工程学院本学院/部未明确归属的数据

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