Gallium　nitride　nanowires　(GaN　NWs)　are　commonly　synthesized　using　harsh/toxic　conditions　(e.g.,　ultrahigh　vacuum,　high　substrate　temperature,　toxic　materials,　etc.)　or　by　catalytic　conditions.　In　this　work,　GaN　NWs　were　grown　on　graphite　substrates　by　the　direct　reaction　of　Ga　atoms　with　excited　N　plasma　without　the　need　for　a　catalyst.　This　was　achieved　using　plasma　enhanced　chemical　vapor　deposition　(PECVD)　under　moderate　vacuum　conditions　and　temperatures　below　900　degrees　C.　The　GaN　NWs　consisted　of　polycrystalline　nanostructures　that　appeared　as　pyramidal　islands,　with　diameters　from　90　to　200　nm　and　lengths　from　4　to　20　mu　m.　A　model　for　the　mechanism　of　nucleation　and　growth　of　the　GaN　NWs　is　proposed.　The　morphology　and　quality　of　the　GaN　NWs　varied　significantly　depending　on　the　fabrication　parameters　that　were　used.　Moreover,　they　exhibited　desirable　photoluminescence　(PL)　and　field　emission　(FE)　properties.　This　method　shows　great　promise　for　the　simple,　low　cost,　and　environmentally　friendly　fabrication　of　high-purity　NWs,　which　may　lead　to　improved　GaN　NW-based　devices.