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Author：

Jin, D.Y. (Jin, D.Y..) | Hu, R.X. (Hu, R.X..) | Zhang, W.R. (Zhang, W.R..) | Lu, D. (Lu, D..) | Fu, Q. (Fu, Q..) | Zhang, Y.J. (Zhang, Y.J..)

Indexed by：

EI Scopus

Abstract：

With　the　aid　of　the　thermal　model,　thermal　resistance　matrix　of　emitter-segmented　power　HBT　is　proposed　to　represent　thermal　effects.　The　effect　of　2-dimensional　(2-D)　inter-segment　spacing　on　thermal　stability　of　device　is　studied.　It　is　shown　that　the　increase　of　inter-segment　spacing　could　effectively　decrease　thermal　coupling　resistance,　lower　temperature　of　center　segments,　and　hence　improves　the　thermal　stability.　Furthermore,　a　novel　emitter-segmented　power　HBT　with　2-D　non-uniform　segment　spacing　is　proposed,　in　which　the　non-uniformity　of　segment　temperature　is　improved　by　75.26%　and　the　maximum　power　level　difference　of　emitter　segment　is　improved　by　55.84%,　when　compared　with　uniform　segment　spacing　HBT.　Therefore　the　technique　of　2-D　non-uniform　segment　spacing　is　a　better　method　for　enhancing　the　thermal　stability　of　power　HBTs.　©　(2013)　Trans　Tech　Publications,　Switzerland.

Keyword：

Machinery Heterojunction bipolar transistors Thermodynamic stability

Author Community：

  • [ 1 ] [Jin, D.Y.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • [ 2 ] [Hu, R.X.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • [ 3 ] [Zhang, W.R.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • [ 4 ] [Lu, D.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • [ 5 ] [Fu, Q.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • [ 6 ] [Zhang, Y.J.]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

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Source ：

ISSN： 1660-9336

Year： 2013

Volume： 313-314

Page： 737-741

Language： English

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 2

Affiliated Colleges：

信息科学技术学院 本学院/部未明确归属的数据

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