In　this　work,　the　natively　textured　surface　of　gallium-doped　zinc　oxide　(GZO)　films　were　obtained　onto　quartz　substrates　by　radio　frequency　magnetron　sputtering.　The　optimal　optoelectronic　properties　of　GZO　thin　film　exhibited　the　lowest　resistivity　6.8x10(-4)cm,　where　the　carrier　concentration　and　carrier　mobility　were　5.3x10(20)cm(-3)　and　17.3cm(2)V(-1)s(-1),　respectively,　and　the　transmittance　above　87%　in　the　range　of　0.4-1.2　mu　m.　Meanwhile,　this　GZO　thin　film　had　a　low　surface　work　function　of　3.9eV.　We　used　a　two-steps　spin-coating　method　to　deposit　the　perovskite　films.　The　optical　band　gap　of　this　perovskite　films　is　1.561eV.　The　planar　perovskite　solar　cells　device　modeling　based　on　GZO　electron　transporting　layer　was　performed　by　the　Solar　Cell　Capacitance　Simulator　program.　We　inputted　the　electrical　and　optical　parameters　of　GZO　thin　film　in　our　perovskite　solar　cells　simulation　model.　With　the　increasing　of　carrier　concentration,　a　high-power　conversion　efficiency　of　20.167%　was　obtained.　Modifying　GZO　surface,　obtaining　a　suitable　surface　work　function　(3.9eV),　it　could　reduce　the　interlayer　contact　barrier　and　optimize　the　energy　level　matching.　At　the　perovskite/electron　transporting　layer　interface,　no　electron　barrier　was　formed,　which　facilitated　electron　extraction　and　reduced　interface　recombination.　The　higher　power　conversion　efficiency　of　21.132%　was　obtained.