Design and thermal analysis of SiGe HBT with segmented emitter fingers and non-uniform segment spacing - Details

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Abstract：

A　novel　multi-finger　power　SiGe　heterojunction　bipolar　transistor　(HBT)　with　segmented　emitter　fingers　and　nonuniform　segment　spacing　was　proposed　to　improve　the　thermal　stability.　Thermal　simulation　for　a　ten-finger　power　SiGe　HBT　with　novel　structure　was　conducted　with　ANSYS　software.　Three-dimensional　temperature　distribution　on　emitter　fingers　was　obtained.　Compared　with　traditional　emitter　structure,　the　maximum　junction　temperature　of　novel　structure　reduce　significantly　from　427.465K　to　417.03K,　the　thermal　resistance　reduce　from　170K/W　to　156K/W,　temperature　distribution　were　significantly　improved.　Thermal　stability　was　effective　enhanced.　©　2010　IEEE.

Keyword：

Temperature distribution Millimeter waves Thermodynamic stability Heterojunctions Si-Ge alloys Heterojunction bipolar transistors Thermoanalysis Computer software

Author Community：

[ 1 ] [Chen, Liang]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 2 ] [Zhang, Wan-Rong]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 3 ] [Jin, Dong-Yue]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 4 ] [Xiao, Ying]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 5 ] [Wang, Ren-Qing]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 6 ] [Hu, Ning]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China

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Related Keywords：

Design and thermal analysis of SiGe HBT with non-uniform finger length and non-uniform finger spacing
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Design and thermal analysis of SiGe HBT With composite structure of segmented emitter and non-uniform finger spacing
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Unequally valued emitter ballasting resistors optimum design of multi-finger power GeSi HBTs
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Research on non-uniform emitter spacing technology to improve thermal stability of multi-finger SiGe HBT under High-Power
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Source ：

Year： 2010

Page： 664-666

Language： English

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count： 3

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 13

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信息科学技术学院本学院/部未明确归属的数据

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