Indium　chloride　(InCl3·4H2O),　thioacetamide　(CH3CSNH2)　mixed　solution　for　the　precursor　solution,　adding　an　appropriate　amount　of　citric　acid　for　complexing　agent,　uniform　films　In2S3　was　prepared　by　chemical　bath　deposition　method　on　glass　substrate　surface.　And　X-ray　diffraction　(XRD),　scanning　electron　microscopy　(SEM),　UV-visible　light　photometer　was　used　for　the　analysis　and　characterization　of　thin　films.　The　acidity　of　solution,　reaction　temperature,　deposition　time　and　the　addition　of　citric　acid　complexing　agents　and　other　factors　on　the　impact　of　thin　film　deposition　In2S3　thin　film　were　studied.　The　results　showed　that:　The　deposition　conditions　for　the　film　were　in　the　pH　value　of　2,　deposition　time　of　10h,　deposition　temperature　of　80　.　Under　these　conditions　the　films　were　obtained　from　the　reaction　system　with　well　crystallinity,　crystal　structure　of　cubic　structure,　and　different　thin　films　band　gap　of　about　2.5eV.　©2010　IEEE.