Improvement of LED extraction efficiency with antireflection coating - Details

Author：

Guo, Y.H. (Guo, Y.H..) | Guo, X. (Guo, X..) | Guan, B.L. (Guan, B.L..) | Jiang, W.J. (Jiang, W.J..) | Shen, G.D. (Shen, G.D..)

Indexed by：

EI Scopus

Abstract：

It　is　very　important　to　increase　light　extraction　efficiency　in　LED　structure　design.　The　antireflection　film　technology　is　a　simple　and　cost-cutting　method.　In　this　paper,　we　proposed　a　SiON　layer　as　an　antireflection　coating　deposited　on　the　surface　of　the　conventional　AlGaInP　LED　which　can　be　used　to　improve　the　performance　of　the　chip.　In　the　conventional　AlGaInP　LED,　ITO　thin　film　was　deposited　as　current　spreading　layer.　The　propagation　of　lights　through　these　layers　was　analyzed　by　transfer　matrix　method.　The　thicknesses　of　ITO　and　SiON　layers　have　been　optimized.　SiON　film　was　deposited　by　PECVD.　The　results　of　the　experiments　showed　that　optical　power　increased　by　11.38%　after　LED　packaged.　The　difference　of　peak　wavelength　between　the　two　samples　was　less　than　1nm.　©2009　SPIE-OSA-IEEE.

Keyword：

III-V semiconductors Transfer matrix method Gallium alloys Thin films Light emitting diodes Aluminum alloys Antireflection coatings Extraction Semiconductor alloys Silicon compounds

Author Community：

[ 1 ] [Guo, Y.H.]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Guo, X.]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Guan, B.L.]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Jiang, W.J.]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Shen, G.D.]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China