In　this　paper,　we　report　on　a　MOS-like　structured　Si　photodetector　whose　response　range　covers　UV-VIS-NIR　with　good　responsivity.　The　devices　have　an　Al/Silicon-Rich　Oxide　(SRO)/Si　MOS-like　structure　fabricated　with　standard　Si　IC　technology.　Its　reverse　leakage　current　is　as　small　as　10-10　A　at　V=　-5　V.　However,　when　illuminated　with　white　or　UV　light　with　intensity　of　˜3.6　mW/cm2,　the　reverse　current　increase　greatly.　The　photocurrent　to　dark　current　ratio　can　be　as　high　as　1.5105　for　white　light　and　8.7104　for　UV　light　at　V=　-5　V,　indicating　that　the　structure　is　very　sensitive　to　both　visible　and　UV　light.　The　spectral　response　of　the　device　shows　good　responsivity　from　200　nm　to　near　infrared,　with　maximum　responsivity　of　0.78　A/W　at　900　nm.　The　role　of　the　SRO　layer　and　the　Si　substrate　in　obtaining　such　a　high　photoresponse　in　UV-VIS-NIR　range　was　analyzed.　©　2009　SPIE.