A low power SiGe HBT LNA utilizing serial inductance for wideband matching - Details

Author：

Indexed by：

EI Scopus

Abstract：

A　UWB　LNA　(low　noise　amplifier)　based　on　0.35m　SiGe　BiCMOS　technology　is　presented　in　this　paper.　This　LNA　adopts　a　resistance　feedback　topology　to　optimize　the　gain　and　noise　figure.　The　serial　inductance　at　the　base　is　used　to　matching　input　impedance　and　decreasing　group　delay　variation.　The　simulation　results　indicate　that　the　gain　of　LNA　reaches　12.5dB　with　the　variation　of　1.9dB　and　the　power　consuming　is　6.3mW　in　full　band　from　3.1GHz　to　10.6GHz.　This　SiGe　UWB　LNA　exhibits　less　than　5ps　group　delay　variation　and　less　than　3.85dB　NF　over　the　entire　band.　©　2008　IEEE.

Keyword：

Si-Ge alloys Low noise amplifiers Bismuth alloys Broadband amplifiers Inductance Noise figure Group delay Silicon

Author Community：

[ 1 ] [Huang, Lu]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Zhang, Wan-Rong]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Xie, Hong-Yun]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Li, Jia]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Zhang, Wei]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 6 ] [Wang, Yang]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 7 ] [Shen, Pei]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 8 ] [Gan, Jun-Ning]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 9 ] [Huang, Yi-Wen]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 10 ] [Hu, Ning]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

Reprint Author's Address：

Email：

huanglu8508@emails.bjut.edu.cn

Show more details

Related Keywords：

UWB LNA based on current-reused topology and active inductor
2014，Journal of Huazhong University of Science and Technology (Natural Science Edition)
Design of UWB Cascode SiGe BiCMOS LNA with current reuse
2012，2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012
Design of SiGe HBT UWB low noise amplifier employing broadband noise canceling
2011，2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
Design of an inductorless 3-10GHz SiGe HBT low-noise amplifier
2009，2009 8th IEEE International Conference on ASIC, ASICON 2009

Source ：

Year： 2008

Page： 1500-1503

Language： English

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count： 2

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 11

Affiliated Colleges：

信息科学技术学院本学院/部未明确归属的数据

Get Fulltext

DOI Library Discovery Baidu Scholar Search Engineering Village

Type
Departments

All Years Choose Year From to