Diode-pumped Yb: Lu2SiO5 lasers - Details - 北京工业大学机构库

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Abstract：

Yb:LSO　CW　and　Q-switched　lasers　pumped　by　diode　lasers　were　demonstrated.　Q-switched　laser　operated　at　1058nm　with　InGaAs　absorber.　Pulse　repetition　was　around　39KHz,　slope　efficiency　of　CW　and　Q-switched　lasers　were　22.2%　and　3.0%.　©　2007　OSA.

Keyword：

Indium alloys Gallium alloys Pumping (laser) Semiconducting indium gallium arsenide Ytterbium compounds Q switching Semiconductor alloys Silicon compounds Lutetium compounds Q switched lasers Gallium compounds

Author Community：

[ 1 ] [Song, Yanrong]College of Applied Science, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Hu, Jianghai]College of Applied Science, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Yan, Chengfeng]Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
[ 4 ] [Zhao, Guangjun]Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
[ 5 ] [Su, Liangbi]Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
[ 6 ] [Xu, Jun]Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
[ 7 ] [Guo, Kai]College of Applied Science, Beijing University of Technology, Beijing 100022, China
[ 8 ] [Zhang, Zhigang]College of Applied Science, Beijing University of Technology, Beijing 100022, China
[ 9 ] [Zhang, Zhigang]Institute of Quantum Electronics, Peking University, Beijing, 100871, China

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Year： 2007

Language： English

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

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Chinese Cited Count：

30 Days PV： 8

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