Comparison the gain characteristic of AlInGaAs/AIGaAs and GaAs/AlGaAs quantum wells - Details

Author：

Hongxing, Gai (Hongxing, Gai.) | Jun, Deng (Jun, Deng.) | Jianjun, Li (Jianjun, Li.) | Guangdi, Shen (Guangdi, Shen.) | Jianxin, Chen (Jianxin, Chen.)

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EI Scopus

Abstract：

According　to　the　Harrison＇s　model,　the　level　change　of　conduction　and　valence　bands　caused　by　the　strain　of　AlInGaAs/AlGaAs　quantum　well　(QW)　was　analyzed　firstly.　The　energy　level　of　the　electron　and　hole　in　the　AlInGaAs/AlGaAs　strained　and　GaAs/AlGaAs　unstrained　QW　were　calculated,　respectively.　In　addition,　taking　the　lorentzian　function,　the　linear　gain　of　the　two　QWs　were　calculated　and　discussed.　Contrast　the　gain　performance　of　GaAs/AlGaAs　QW　with　that　of　AlyInxGa1-x-yAs/　AlGaAs　QW,　it　can　be　found　that　the　strained　AlyInxGa　1-x-yAs/AlGaAs　QW　material　has　more　promising　optical　gain　than　that　of　the　GaAs/AlGaAs　QW.　©　2005　Trans　Tech　Publications,　Switzerland.

Keyword：

Semiconducting gallium arsenide Schematic diagrams Interpolation Heterojunctions Photons Functions Energy gap Semiconductor quantum wells Linearization Fermi level Gain measurement Aluminum alloys

Author Community：

[ 1 ] [Hongxing, Gai]Dept.of Electrical Engineering, Beijing Opto-Electron. Technol. Lab, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Jun, Deng]Dept.of Electrical Engineering, Beijing Opto-Electron. Technol. Lab, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Jianjun, Li]Dept.of Electrical Engineering, Beijing Opto-Electron. Technol. Lab, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Guangdi, Shen]Dept.of Electrical Engineering, Beijing Opto-Electron. Technol. Lab, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Jianxin, Chen]Dept.of Electrical Engineering, Beijing Opto-Electron. Technol. Lab, Beijing University of Technology, Beijing 100022, China

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Email：

gate@emails.bjpu.edu.cn

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Source ：

ISSN： 0255-5476

Year： 2005

Issue： III

Volume： 475-479

Page： 1685-1688

Language： English

JCR Journal Grade：4

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 2

Affiliated Colleges：

材料科学与工程学院本学院/部未明确归属的数据

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