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Author:

Yuehui, Hu (Yuehui, Hu.) | Guanghua, Chen (Guanghua, Chen.) | Xiuhong, Zhu (Xiuhong, Zhu.) | Yandong, Rong (Yandong, Rong.) | Zhuo, Gao (Zhuo, Gao.) | Ying, Li (Ying, Li.) | Huaien, Zhou (Huaien, Zhou.)

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EI Scopus

Abstract:

In this paper the magnetic field profiles, which were produced by three ways in the deposition chamber and plasma chamber of single coil divergent field microwave electronic circle resonance chemistry vapor deposition (MWECR CVD) system, was investigated. Then the magnetic field gradient of these magnetic field profiles was obtained quantitatively by using Lorentz fit. The results indicated that the gradient value of the magnetic field profile nearby the substrate, which was produced by a coil current with 137.7A if a SmCo permanent magnet was equipped below the substrate holder, is the largest, and the highest deposition rate of the hydrogenated amorphous silicon (a-Si:H) film was observed in this condition. ©2004 IEEE.

Keyword:

Growth (materials) Chemical vapor deposition Plasmas Amorphous films Amorphous silicon Electric coils Magnetic fields Permanent magnets Substrates Plasma density

Author Community:

  • [ 1 ] [Yuehui, Hu]Department of Material Science and Engineering, Beijing University of Technology, China
  • [ 2 ] [Yuehui, Hu]Jingdezhen Ceramic Institute, China
  • [ 3 ] [Guanghua, Chen]Department of Material Science and Engineering, Beijing University of Technology, China
  • [ 4 ] [Guanghua, Chen]Jingdezhen Ceramic Institute, China
  • [ 5 ] [Xiuhong, Zhu]Department of Material Science and Engineering, Beijing University of Technology, China
  • [ 6 ] [Yandong, Rong]Department of Material Science and Engineering, Beijing University of Technology, China
  • [ 7 ] [Zhuo, Gao]Department of Material Science and Engineering, Beijing University of Technology, China
  • [ 8 ] [Ying, Li]Department of Material Science and Engineering, Beijing University of Technology, China
  • [ 9 ] [Huaien, Zhou]Department of Material Science and Engineering, Beijing University of Technology, China

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Source :

Year: 2004

Page: 268-270

Language: English

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 7

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