Indexed by：
Abstract：
A new microwave device model is brought out and simulated, which is called TI-PHEMT. The maximum extrinsic transconductance at high temperature increases significantly and therefore the microwave performance of HEMT at high temperature is increased A new concept ＇Temperature Injection＇ is put forward to explain the reason. ©2004 IEEE.
Keyword：
Reprint Author's Address：
Email：
Source ：
Year： 2004
Page： 531-535
Language： English
Cited Count：
SCOPUS Cited Count：
ESI Highly Cited Papers on the List： 0 Unfold All
WanFang Cited Count：
Chinese Cited Count：
30 Days PV： 5
Affiliated Colleges：
