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Author:

Yang, Heng Quan (Yang, Heng Quan.) | Chen, Yong Jin (Chen, Yong Jin.) | Wang, Xiao Yang (Wang, Xiao Yang.) | Miao, Lei (Miao, Lei.) | Li, Xiao Yan (Li, Xiao Yan.) | Han, Xiao Dong (Han, Xiao Dong.) (Scholars:韩晓东) | Lu, Xu (Lu, Xu.) | Wang, Guo Yu (Wang, Guo Yu.) | Zhou, Xiao Yuan (Zhou, Xiao Yuan.)

Indexed by:

EI Scopus SCIE

Abstract:

The rational design and fabrication of nanostructures has become a fashionable strategy for pursing high thermoelectric performance in solid-state materials. Here we report nanostructured Te-Sb2Te3 composites with significantly enhanced thermoelectric performance through a scalable bottom-up method followed by a rapid sintering process. The power factor along with the carrier concentration could be significantly enhanced by increasing the number of point defects of Sb'(Te). Meanwhile, a great number of boundaries and hetero-interfaces between the Te and Sb2Te3 nanoparticles could play an important role in blocking phonons, resulting in the evident suppression of lattice thermal conductivity. Ultimately, a highest zT value close to 1.0 could be achieved at 623 K in samples with components of 2.6 mol% Sb2Te3 and 97.4 mol% Te. Such a peak zT value is comparable to that of doped Te materials synthesized by the conventional solid-state reaction process. This work reveals that high thermoelectric performance could be realized in an intentionally designed nanocomposite by synergistically improving the power factor and suppressing the lattice thermal conductivity.

Keyword:

Author Community:

  • [ 1 ] [Yang, Heng Quan]Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China
  • [ 2 ] [Lu, Xu]Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China
  • [ 3 ] [Zhou, Xiao Yuan]Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China
  • [ 4 ] [Chen, Yong Jin]Beijing Univ Technol, Beijing Key Lab, Beijing 100124, Peoples R China
  • [ 5 ] [Han, Xiao Dong]Beijing Univ Technol, Beijing Key Lab, Beijing 100124, Peoples R China
  • [ 6 ] [Chen, Yong Jin]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 7 ] [Han, Xiao Dong]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 8 ] [Wang, Xiao Yang]Guilin Univ Elect Technol, Sch Mat Sci & Engn, Guilin 541004, Peoples R China
  • [ 9 ] [Miao, Lei]Guilin Univ Elect Technol, Sch Mat Sci & Engn, Guilin 541004, Peoples R China
  • [ 10 ] [Li, Xiao Yan]Chongqing Jiaotong Univ, Dept Mat Sci & Engn, Chongqing 400074, Peoples R China
  • [ 11 ] [Wang, Guo Yu]Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China
  • [ 12 ] [Wang, Guo Yu]Univ Chinese Acad Sci, Beijing 100049, Peoples R China

Reprint Author's Address:

  • [Zhou, Xiao Yuan]Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China;;[Miao, Lei]Guilin Univ Elect Technol, Sch Mat Sci & Engn, Guilin 541004, Peoples R China;;[Wang, Guo Yu]Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China;;[Wang, Guo Yu]Univ Chinese Acad Sci, Beijing 100049, Peoples R China

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Source :

CRYSTENGCOMM

ISSN: 1466-8033

Year: 2018

Issue: 47

Volume: 20

Page: 7729-7738

3 . 1 0 0

JCR@2022

ESI Discipline: CHEMISTRY;

ESI HC Threshold:192

JCR Journal Grade:1

Cited Count:

WoS CC Cited Count: 20

SCOPUS Cited Count: 21

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 4

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