Residual　stress　generated　in　grinding　process　of　monocrystalline　silicon　can　cause　the　wafer　warpage,　and　difficulties　in　subsequent　processes　such　as　holding　and　scribing.　It　can　also　lead　to　the　formation　of　cracks　and　the　occurrence　of　corrosion,　which　is　harmful　for　electrical　performance　of　silicon　component.　In　this　study,　with　the　method　of　step-wire　wet　etching,　the　phase　transformation　and　distribution　of　residual　stress　in　ground　silicon　wafer　were　examined　by　confocal　laser　micro-Raman　spectroscopy.　As　the　etching　depth　going　down,　the　residual　stress　exhibits　in　the　trends　of　decreasing　of　compressive　stress　and　following　a　scatter　distribution　of　tensile　stress.　During　the　nano-grinding　processes　of　monocrystalline　silicon,　the　generation　mechanism　of　residual　stress　is　computed　by　a　series　of　the　molecular　dynamic　(MD)　simulation.　Subsurface　damage　(SSD)　in　the　form　of　phase-transformed　silicon　is　observed,　and　the　depth　of　SSD　varies　by　the　depth　of　cut.　The　volume　shrinkage　of　phase-transformed　silicon　is　also　studied　to　explain　the　grinding　mechanism　and　the　reason　for　inducing　residual　stress　of　ground　silicon.　By　adopted　the　Stony　theory　and　volume　shrinkage　rate　of　amorphous　phase　from　MD　results,　a　theoretical　model　is　established　to　determine　the　trend　of　compressive　stress　in　subsurface　of　ground　silicon.　(C)　2018　The　Japan　Society　of　Applied　Physics