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Author:

Tang, W.-H. (Tang, W.-H..) | Fang, H. (Fang, H..) | Li, F.-S. (Li, F.-S..) | Huang, C.-S. (Huang, C.-S..) | Yu, X.-Y. (Yu, X.-Y..) | Wang, R.-Z. (Wang, R.-Z..) (Scholars:王如志)

Indexed by:

Scopus PKU CSCD

Abstract:

The electronic structure, carrier transport and the optical absorption proprerties of the Na doped TiO 2 have been studied by the pseudo-potential density functional theory method. The pure TiO 2 has direct band gap of 2.438 eV and the Na doped TiO 2 exibits decreased band gap value of 1.976 eV. The pure TiO 2 has five bands while the Na doped TiO 2 has seven bands. The TiO 2 has higher carrier mobility than that of the Na doped TiO 2 , however the Na doped TiO 2 has heavier carrier effective mass than that of the TiO 2 . The dopant Na has induced hole carriers and new bands in to the valance bands. The Na doping increases the carrier concentration of the TiO 2 , the Ti p electrons, Na p electrons and the O p electrons play importan role in the carrier conduction process. The optical absorption region has been expanded to low energy range. © 2018, Chinese Ceramic Society. All right reserved.

Keyword:

Electronic transport properties; Na doping; Optical absorption; TiO 2

Author Community:

  • [ 1 ] [Tang, W.-H.]Academy of Physics and Electronic Engineering, Guangxi Normal University for Nationalities, Chongzuo, 532200, China
  • [ 2 ] [Fang, H.]Academy of Physics and Electronic Engineering, Guangxi Normal University for Nationalities, Chongzuo, 532200, China
  • [ 3 ] [Fang, H.]College of Materials Science and Engineering, Beijing University of Technology, Beijing, 100124, China
  • [ 4 ] [Li, F.-S.]Academy of Physics and Electronic Engineering, Guangxi Normal University for Nationalities, Chongzuo, 532200, China
  • [ 5 ] [Huang, C.-S.]Academy of Physics and Electronic Engineering, Guangxi Normal University for Nationalities, Chongzuo, 532200, China
  • [ 6 ] [Yu, X.-Y.]Academy of Physics and Electronic Engineering, Guangxi Normal University for Nationalities, Chongzuo, 532200, China
  • [ 7 ] [Wang, R.-Z.]College of Materials Science and Engineering, Beijing University of Technology, Beijing, 100124, China

Reprint Author's Address:

  • [Fang, H.]Academy of Physics and Electronic Engineering, Guangxi Normal University for NationalitiesChina

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Source :

Journal of Synthetic Crystals

ISSN: 1000-985X

Year: 2018

Issue: 5

Volume: 47

Page: 952-957

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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