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Author:

Xu, XiaoLong (Xu, XiaoLong.) | Hao, ZhenDong (Hao, ZhenDong.) | Wang, Hao (Wang, Hao.) (Scholars:汪浩) | Xie, Yizhu (Xie, Yizhu.) | Liu, JingBing (Liu, JingBing.) | Yan, Hui (Yan, Hui.)

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EI Scopus SCIE

Abstract:

Nitrogen-doped carbon has been proved to be able to improve the cathode performance of lithium ion batteries (LIBs). As a cathode material, LiFePO4 (LFP) has been widely used for LIBs. However, it needs higher quantity of conductive carbons to enhance its electrochemical performances due to the low ion diffusion coefficient and poor electronic conductivity. Herein, we demonstrate a one-step and facile synthetic route of nitrogen-doped graphite carbon (NGC) for coating the LFP particles. It derives from the chitosan precursor by freeze drying technology and annealing at 600-800 A degrees C. Raman spectroscopy and high-resolution transmission electron microscopy indicate the coating layer is the graphite carbon with a single layer nature. X-ray photoelectron spectroscopy test proves the existence of C-N or C=N (285.2 eV) bonding in the graphite carbon. After coating, the LFP@NGC cathode achieves a specific capacity of similar to 155.5 mAh g(-1) with Coulombic efficiency similar to 97% at 0.1 C. The cell has a capacity of 63.2 mAh g(-1) at 5 C after 100 cycles with Coulombic efficiency and capacity retention ratio of similar to 100%. This work offers a new and facile route to fabricate NGC for the energy storage.

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Author Community:

  • [ 1 ] [Xu, XiaoLong]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Hao, ZhenDong]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Wang, Hao]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Liu, JingBing]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Yan, Hui]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 6 ] [Xie, Yizhu]Shenzhen Univ, Coll Phys & Energy, Shenzhen Key Lab Adv Thin Films & Applicat, Shenzhen 518060, Peoples R China

Reprint Author's Address:

  • 汪浩

    [Wang, Hao]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China;;[Xie, Yizhu]Shenzhen Univ, Coll Phys & Energy, Shenzhen Key Lab Adv Thin Films & Applicat, Shenzhen 518060, Peoples R China

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Source :

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

ISSN: 0957-4522

Year: 2018

Issue: 19

Volume: 29

Page: 16630-16638

2 . 8 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:260

JCR Journal Grade:3

Cited Count:

WoS CC Cited Count: 20

SCOPUS Cited Count: 20

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 11

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