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Abstract：
β-SiC thin films were grown on Si(100) using PECVD at 400°C-700°C. The structure and composition of the samples were analyzed by FTIR and XRD. The influences of substrate temperature on the crystalline degree of SiC thin films in certain deposit conditions were discussed and the thin films with perfect crystalline degree at 600 °C were obtained.
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Rare Metal Materials and Engineering
ISSN： 1002-185X
Year： 2001
Issue： SUPPL. 1
Volume： 30
Page： 478-
0 . 7 0 0
JCR@2022
ESI Discipline： MATERIALS SCIENCE;
JCR Journal Grade：3
Cited Count：
WoS CC Cited Count： 4
SCOPUS Cited Count：
ESI Highly Cited Papers on the List： 0 Unfold All
WanFang Cited Count：
Chinese Cited Count：
30 Days PV： 16
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