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Abstract：
The principle of operation of Si and SiGe resistor load flip flops and Si resistor load ring oscillators of n channel vertical dual carrier field effect transistors are reviewed. Measured data from experimental verification of the principle of operation is presented. © 2001 IEEE.
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2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
Year： 2001
Volume： 1
Page： 551-554
Language： English
Cited Count：
SCOPUS Cited Count： 8
ESI Highly Cited Papers on the List： 0 Unfold All
WanFang Cited Count：
Chinese Cited Count：
30 Days PV： 7
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