High-frequency output characteristics of AlGaAs/GaAs heterojunction bipolar transistors - Details

Author：

Chen, J. (Chen, J..) | Gao, G.B. (Gao, G.B..) | Ünlü, M.S. (Ünlü, M.S..) | Morkoç, H. (Morkoç, H..)

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Abstract：

A　model　has　been　developed　which　generates　the　highfrequency　ic　-　vcc　output　characteristics　of　bipolar　transistors　from　computed　cutoff　frequency　against　current　density　data.　The　presented　results,　which　can　be　used　directly　for　largesignal　modelling,　are　the　first　report　of　high-frequency　output　characteristics　of　bipolar　transistors.　©　1990,　The　Institution　of　Electrical　Engineers.　All　rights　reserved.

Keyword：

Bipolar devices; Transistors

Author Community：

[ 1 ] [Chen, J.]Coordinated Science Laboratory and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 1101 W. Springfield Avenue, Urbana, IL 61801, United States
[ 2 ] [Gao, G.B.]G. B. Gao is on leave from Beijing Polytechnic University, Reliability Physics Laboratory, Beijing, China
[ 3 ] [Ünlü, M.S.]Coordinated Science Laboratory and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 1101 W. Springfield Avenue, Urbana, IL 61801, United States
[ 4 ] [Morkoç, H.]Coordinated Science Laboratory and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 1101 W. Springfield Avenue, Urbana, IL 61801, United States

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Source ：

Electronics Letters

ISSN： 0013-5194

Year： 1990

Issue： 25

Volume： 26

Page： 2058-2060

1 . 1 0 0

JCR@2022

ESI Discipline： ENGINEERING;

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SCOPUS Cited Count： 5

ESI Highly Cited Papers on the List： 0 Unfold All

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Chinese Cited Count：

30 Days PV： 4

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