A　high　efficient　AlGaInP　light　emitting　diode　(LED)　with　omni-directional　reflector　(ODR)　fabricated　by　Au/Au　direct　wafer　bonding　was　proposed,　in　which　Si　was　used　as　transfer　substrate,　and　tin　doped　indium　oxide(ITO)　was　used　as　window　layer　and　buffer　layer.　By　using　Au/Au　as　bonding　interface,　we　removed　the　GaAs　substrate　of　the　AlGalnP　wafer　and　successfully　bonded　it　to　Si　substrate　under　the　pressure　of　0.35　mPa,　temperature　of　260°C.　On　the　microscope　and　scanning　electron　microscope　(SEM)　pictures,　the　bonding　structure　is　complete　and　no　crack　on　the　interface,　and　the　ODR　structure　is　protected.　Comparing　with　conventional　GaAs　absorbing　substrate　LED,　the　forward　voltage　is　80%　lower　and　the　output　power　and　luminous　efficiency　is　1.5　and　2.1　times　higher　respectively.