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Author:

Wang, Yan (Wang, Yan.) | Wang, Yishu (Wang, Yishu.) | Han, Jing (Han, Jing.) | Tan, Shihai (Tan, Shihai.) | Guo, Fu (Guo, Fu.) (Scholars:郭福)

Indexed by:

EI Scopus SCIE

Abstract:

Sn grain orientation in solder matrix has recently been considered as one of the principal failure contributions in lead-free solder joints. Since beta-Sn exhibits high anisotropy, the differences of electromigration behavior of solder joints with various grain orientations are dramatic. With different angle (theta) between the c-axis of Sn grain and the direction of electron flow, the solder joints often demonstrate varying degrees of electromigration-induced damage. The present investigation illustrated significant differences in microstructural features on the surface of Cu reinforced composite solder joints, even with similar angle theta. Two Cu particles reinforced Sn3.5Ag composite solder joints with the similar angle theta of 35A degrees and 40A degrees were selected to investigate the effects of Sn grain c-axis on electromigration under high current stressing for 528 h. A large number of Cu6Sn5 compounds were observed and occupied nearly the whole surface with clear polarization effect in one sample. In contrast, very few Cu6Sn5 were found on the surface of the solder matrix in the other sample after current stressing, and the Cu6Sn5 which was formed after reflow disappeared with subsequent current stressing. Even though polarization effect was not obvious, and the cathode interfacial dissolution was observed on such sample. Systematic study revealed that the angle theta alone was not a sole factor to determine the electromigration damage. It has to be considered along with the coordinate system containing the orientation of the c-axis of the Sn grain, a more dominative factor for the diffusing species.

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Author Community:

  • [ 1 ] [Wang, Yan]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Wang, Yishu]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Han, Jing]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Tan, Shihai]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Guo, Fu]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China

Reprint Author's Address:

  • 郭福

    [Guo, Fu]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China

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Source :

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

ISSN: 0957-4522

Year: 2018

Issue: 7

Volume: 29

Page: 5954-5960

2 . 8 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:260

JCR Journal Grade:3

Cited Count:

WoS CC Cited Count: 8

SCOPUS Cited Count: 9

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 6

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