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For power bipolar transistors, the emitter-ballasting-resistor is usually used to improve the thermal stability. However, the ballasting-resistor degrades the output power, power gain, power-added efficiency (PAE) of the transistor. In this paper, the thermal stability can be improved substantially by adjusting either the spacing or length of the emitter fingers without using ballasting resistors. The temperature rise at the device center of the space-adjusted HBT is suppressed by reducing heat flow from adjacent fingers, and that of the length-adjusted HBT is suppressed by reducing heat generation in the region.
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ISAPE 2006 - 2006 7th International Symposium on Antennas, Propagation and EM Theory, Proceedings
Year: 2006
Page: 1276-1279
Language: English
Cited Count:
SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
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Chinese Cited Count:
30 Days PV: 4