The　effect　of　electroplating　parameters　(filling　current　density　and　additive　concentration)　on　the　copper　in　Through-Silicon-Via,　abbreviated　to　TSV-Cu,　protrusion　during　annealing　is　analyzed.　Also,　the　influence　of　electro　deposition　parameters,　and　the　annealing　process　on　the　TSV-Cu　protrusion　during　thermal　cycling　are　studied.　The　result　shows　that,　the　distribution　of　the　TSV-Cu　protrusion　values　after　annealing　conforms　to　the　normal　distribution　law,　and　the　protrusions　of　TSVs　filled　by　higher　current　density　and　higher　additive　concentration　are　lower.　In　addition,　annealing　decrease　the　extent　of　protrusion　during　subsequent　ten　cycles　of　thermal　cycling,　and　the　protrusion　values　are　decreased　by　0.52μm∼0.72μm.　The　results　help　to　solve　key　TSV-related　manufacturing　yield　and　reliability　challenge　for　3D　IC　integration.　©　2015　IEEE.