With　the　trend　of　electronic　products　towards　miniaturization　and　multi-function,　integrated　circuit　(IC)　is　facing　severer　challenges　in　reducing　package　size,　expediting　responses　and　providing　additional　functionalities.　3-dimensions　(3D)　IC　based　on　Through-Silicon　Vias　(TSVs)　has　nowadays　become　the　most　promising　technology　to　overcome　the　obstacles,　as　the　vertical　stack　of　chips　using　TSV　can　satisfy　the　need　of　higher　bandwidths　and　smaller　footprints.　Continuous　development　of　TSVs　leads　to　a　persisting　demand　for　their　reliability　investigations,　which　of　course　include　the　thermal　shock　test.　It　is　commonly　accepted　that　the　coefficient　of　thermal　expansion　(CTE)　mismatch　between　Cu-TSV　and　Si-chip　can　result　in　residual　stresses　in　each　material　and　interfacial　shear　stresses　near　the　extremities　of　the　via　during　a　thermal　excursion,　therefore,　it　is　necessary　to　study　the　effects　of　thermal　shock　on　TSVs.　In　this　paper,　TSV　samples　are　exposed　to　thermal　shock　for　different　cycles.　After　thermal　shock,　microstructure　of　TSV　is　analyzed.　The　intrusion　of　Cu　under　low　cycle,　which　is　distinct　from　results　of　other　studies,　has　been　found.　In　addition,　hardness　of　TSV　is　tested.　©　2015　IEEE.