With　the　increase　of　wafer　diameter　and　the　reduction　of　wafer　thickness,　the　fracture　strength　of　silicon　wafer　decreases　dramatically,　which　has　drawn　much　more　attention　in　recent　years.　Three-point　bending　test　is　a　frequently　cited　method　used　to　measure　the　fracture　strength　of　silicon　wafer,　and　the　measured　strength　is　sensitive　to　the　edge　defect　caused　by　dicing.　This　paper　proposes　a　grinding　and　polishing　wafer　treatment　method　to　eliminate　the　defect　along　the　sample　edges.　And　the　fracture　strength　of　the　treated　and　the　untreated　samples　are　compared　in　this　study.　The　result　shows　that　the　fracture　strength　of　the　treated　samples　is　much　higher　than　those　of　the　untreated.　©　2015　IEEE.