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Abstract：
The oriented AlN films on Si (100) substrates were prepared by reactive magnetron sputtering and were characterized by XRD spectra. It was observed that with decreasing in the sputtering pressure, the c-axis orientation of hexagonal AlN grains in the films varies from paralleling with to perpendicular to the surface of the substrates. From the images of atomic force microscopy, the AlN grains were found having a silkworm-like shape and the long axis was the c-axis of the hexagonal AlN.
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Mechanics and Material Engineering for Science and Experiments
Year： 2003
Page： 304-307
Language： English
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ESI Highly Cited Papers on the List： 0 Unfold All
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30 Days PV： 9
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