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学者姓名：孟军华
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Abstract ：
Due to good lattice matching and bipolar doping behavior, wide bandgap SrTiO3 (STO) is a promising substrate for the heteroepitaxial growth of beta-Ga2O3 to construct heterojunctions for (opto-)electronic device applications. However, the investigation of the growth of beta-Ga2O3 film on the STO (111) substrate is still lacking. In this work, for the first time, the beta-Ga2O3 (2 01) thin films were epitaxially grown on the supercell matched STO (111) substrates by low pressure chemical vapor deposition. The effects of the source and growth temperatures on the surface roughness and crystalline quality of the beta-Ga2O3 films were systemically investigated. By controlling the supply of Ga source, the heteroepitaxial beta-Ga2O3 film grown under the optimized conditions exhibits a narrow X-ray diffraction rocking curve of 0.75 degrees and a low root-mean-square roughness of 1.10 nm. Furthermore, the epitaxial growth of beta-Ga2O3 films on the STO (10 0) substrate was also investigated. The heteroepitaxy of beta-Ga2O3 films on STO lays the foundation for future device applications of beta-Ga2O3-based heterojunctions.
Keyword ：
&beta &beta Crystalline quality Crystalline quality Lattice match Lattice match -Ga2O3 thin films -Ga2O3 thin films Heteroepitaxy Heteroepitaxy STO substrates STO substrates
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| GB/T 7714 | Shi, Yiming , Meng, Junhua , Chen, Jingren et al. Epitaxial growth of ?-Ga2O3 thin films on SrTiO3 (111) and (100) substrates by chemical vapor deposition [J]. | APPLIED SURFACE SCIENCE , 2023 , 616 . |
| MLA | Shi, Yiming et al. "Epitaxial growth of ?-Ga2O3 thin films on SrTiO3 (111) and (100) substrates by chemical vapor deposition" . | APPLIED SURFACE SCIENCE 616 (2023) . |
| APA | Shi, Yiming , Meng, Junhua , Chen, Jingren , Li, Yanmin , Wu, Rui , Wu, Jinliang et al. Epitaxial growth of ?-Ga2O3 thin films on SrTiO3 (111) and (100) substrates by chemical vapor deposition . | APPLIED SURFACE SCIENCE , 2023 , 616 . |
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Abstract ：
The direct growth of wafer-scale single crystal two-dimensional (2D) hexagonal boron nitride (h-BN) layer with a controllable thickness is highly desirable for 2D-material-based device applications. Here, for the first time, a facile submicron-spacing vapor deposition (SSVD) method is reported to achieve 2-inch single crystal h-BN layers with controllable thickness from monolayer to tens of nanometers on the dielectric sapphire substrates using a boron film as the solid source. In the SSVD growth, the boron film is fully covered by the same-sized sapphire substrate with a submicron spacing, leading to an efficient vapor diffusion transport. The epitaxial h-BN layer exhibits extremely high crystalline quality, as demonstrated by both a sharp Raman E-2g vibration mode (12 cm(-1)) and a narrow X-ray rocking curve (0.10 degrees). Furthermore, a deep ultraviolet photodetector and a ZrS2/h-BN heterostructure fabricated from the h-BN layer demonstrate its fascinating properties and potential applications. This facile method to synthesize wafer-scale single crystal h-BN layers with controllable thickness paves the way to future 2D semiconductor-based electronics and optoelectronics.
Keyword ：
epitaxial growth epitaxial growth hexagonal boron nitride hexagonal boron nitride thickness control thickness control vapor deposition vapor deposition
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| GB/T 7714 | Wang, Gaokai , Huang, Jidong , Zhang, Siyu et al. Wafer-Scale Single Crystal Hexagonal Boron Nitride Layers Grown by Submicron-Spacing Vapor Deposition [J]. | SMALL , 2023 , 19 (24) . |
| MLA | Wang, Gaokai et al. "Wafer-Scale Single Crystal Hexagonal Boron Nitride Layers Grown by Submicron-Spacing Vapor Deposition" . | SMALL 19 . 24 (2023) . |
| APA | Wang, Gaokai , Huang, Jidong , Zhang, Siyu , Meng, Junhua , Chen, Jingren , Shi, Yiming et al. Wafer-Scale Single Crystal Hexagonal Boron Nitride Layers Grown by Submicron-Spacing Vapor Deposition . | SMALL , 2023 , 19 (24) . |
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Abstract ：
A large number of defect states that exist at the interface between a perovskite film and an electron transport layer (ETL) are detrimental to the efficiency and the stability of perovskite solar cells (PSCs). It is still a challenge to simultaneously passivate the defects on both sides by a stable and low-cost ion compound. Herein, we demonstrate a simple and effective versatile strategy by introducing hydrochloric acid into SnO2 precursor solution to passivate the defects in both SnO2 and perovskite layers and simultaneously reduce the interface energy barrier, ultimately achieving a high-performance and hysteresis-free PSCs. Hydrogen ions can neutralize -OH groups on the SnO2 surface, whereas the Cl- can not only combine with Sn4+ in ETL but also suppress the Pb-I antisite defects formed at the buried interface. The reduced nonradiative recombination and the favorable energy level alignment result in a significantly increased efficiency from 20.71 to 22.06% of PSCs due to the enhancement of open-circuit voltage. In addition, the stability of the device can also be improved. This work presents a facile and promising approach for the development of highly efficient PSCs.
Keyword ：
SnO2 SnO2 hydrochloric acid hydrochloric acid interface engineering interface engineering electron transport layer electron transport layer perovskite solar cells perovskite solar cells
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| GB/T 7714 | Li, Yanmin , Meng, Junhua , Duan, Ping et al. Transport Layer Engineering by Hydrochloric Acid for Efficient Perovskite Solar Cells with a High Open-Circuit Voltage [J]. | ACS APPLIED MATERIALS & INTERFACES , 2023 , 15 (19) : 23208-23216 . |
| MLA | Li, Yanmin et al. "Transport Layer Engineering by Hydrochloric Acid for Efficient Perovskite Solar Cells with a High Open-Circuit Voltage" . | ACS APPLIED MATERIALS & INTERFACES 15 . 19 (2023) : 23208-23216 . |
| APA | Li, Yanmin , Meng, Junhua , Duan, Ping , Wu, Rui , Shi, Yiming , Zhang, Lisheng et al. Transport Layer Engineering by Hydrochloric Acid for Efficient Perovskite Solar Cells with a High Open-Circuit Voltage . | ACS APPLIED MATERIALS & INTERFACES , 2023 , 15 (19) , 23208-23216 . |
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Abstract ：
Recently, wide band gap hexagonal boron nitride (h-BN) has drawn considerable attention because of its superior properties and potential for optoelectronics applications. However, extremely high substrate temperatures are usually required to obtain highly crystalline h-BN films on dielectric substrates, which is highly desired for most electronic device applications. In this work, wafer-scale high-crystalline-quality h-BN films have been obtained via high-temperature annealing on PLD-grown amorphous BN films. It is found that the annealed h-BN film is epitaxially grown on sapphire with an orientation relationship: h-BN (0001)[1 (1) over bar 00]//sapphire (0001)[1 (1) over bar 00]. The narrow Raman peak and XRD rocking curve, as well as the observed strong excitonic emission, indicate the high crystalline quality of our epitaxial h-BN films. Moreover, the photodetectors fabricated from the annealed h-BN films exhibit an excellent device performance, suggesting that high-temperature annealing is a simple and promising strategy to obtain highly crystalline h-BN films for optoelectronic device applications.
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| GB/T 7714 | Wang, Gaokai , Meng, Junhua , Chen, Jingren et al. Epitaxy of Hexagonal Boron Nitride Thin Films on Sapphire for Optoelectronics [J]. | CRYSTAL GROWTH & DESIGN , 2022 , 22 (12) : 7207-7214 . |
| MLA | Wang, Gaokai et al. "Epitaxy of Hexagonal Boron Nitride Thin Films on Sapphire for Optoelectronics" . | CRYSTAL GROWTH & DESIGN 22 . 12 (2022) : 7207-7214 . |
| APA | Wang, Gaokai , Meng, Junhua , Chen, Jingren , Cheng, Yong , Huang, Jidong , Zhang, Siyu et al. Epitaxy of Hexagonal Boron Nitride Thin Films on Sapphire for Optoelectronics . | CRYSTAL GROWTH & DESIGN , 2022 , 22 (12) , 7207-7214 . |
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Abstract ：
Wide-band-gap layered semiconductor hexagonal boron nitride (h-BN) is attracting intense interest due to its unique optoelectronic properties and versatile applications in deep ultraviolet optoelectronic and two-dimensional electronic devices. However, it is still a great challenge to directly grow high-quality hBN on dielectric substrates, and an extremely high substrate temperature or annealing is usually required. In this work, high-quality few-layer h-BN is directly grown on sapphire substrates via ion beam sputtering deposition at a relatively low temperature of 700 degrees C by introducing NH3 into the growth chamber. Such low growth temperature is attributed to the presence of abundant active N species, originating from the decomposition of NH3 under ion beam irradiation. To further tailor the properties of h-BN, carbon was introduced into the h-BN layer by simultaneously introducing CH4 and NH3 during the growth process, indicating the wide applicability of this approach. Moreover, a deep ultraviolet (DUV) photodetector is also fabricated from a C-doped h-BN layer and exhibits superior performance compared with an intrinsic h-BN device.
Keyword ：
crystalline quality crystalline quality substrate temperature substrate temperature hexagonal boron nitride (h-BN) hexagonal boron nitride (h-BN) photodetectors photodetectors doping doping
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| GB/T 7714 | Chen, Jingren , Wang, Gaokai , Meng, Junhua et al. Low-Temperature Direct Growth of Few-Layer Hexagonal Boron Nitride on Catalyst-Free Sapphire Substrates [J]. | ACS APPLIED MATERIALS & INTERFACES , 2022 , 14 (5) : 7004-7011 . |
| MLA | Chen, Jingren et al. "Low-Temperature Direct Growth of Few-Layer Hexagonal Boron Nitride on Catalyst-Free Sapphire Substrates" . | ACS APPLIED MATERIALS & INTERFACES 14 . 5 (2022) : 7004-7011 . |
| APA | Chen, Jingren , Wang, Gaokai , Meng, Junhua , Cheng, Yong , Yin, Zhigang , Tian, Yan et al. Low-Temperature Direct Growth of Few-Layer Hexagonal Boron Nitride on Catalyst-Free Sapphire Substrates . | ACS APPLIED MATERIALS & INTERFACES , 2022 , 14 (5) , 7004-7011 . |
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Abstract ：
Monoclinic β phase Ga2O3 has been considered as a promising candidate for next generation radio frequency and high-power devices because of its ultrawide bandgap and high breakdown field. The development of epitaxial growth techniques and the synthesis of high quality β-Ga2O3 thin films are crucial for the device applications. In this work, the heteroepitaxial β-Ga2O3 thin films were grown on sapphire (0001) substrates by low pressure chemical vapor deposition. The influence of growth parameters such as the source/substrate temperatures, the oxygen/Ar gas flow rates, and the surface morphology of substrate on the resultant crystallinity and surface roughness of the β-Ga2O3 films were investigated. The β-Ga2O3 heteroepitaxial layer on sapphire exhibits an RMS roughness of 1.82 nm, an XRD rocking curve of 1.18°, and a growth rate of 0.72 μm/h. The β-Ga2O3 film grown on the buffer layer exhibit a smoother surface, whereas the chemical etching and annealing lead to an improved crystallinity and a rough surface. However, there is a trade-off between the crystallization and the surface roughness. © 2021 Elsevier Ltd
Keyword ：
Thin films Thin films Substrates Substrates Low pressure chemical vapor deposition Low pressure chemical vapor deposition Flow of gases Flow of gases Surface roughness Surface roughness Buffer layers Buffer layers Epitaxial growth Epitaxial growth Growth rate Growth rate Morphology Morphology Gallium compounds Gallium compounds Crystallinity Crystallinity Sapphire Sapphire Surface morphology Surface morphology
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| GB/T 7714 | Jiao, Yujia , Jiang, Qian , Meng, Junhua et al. Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition [J]. | Vacuum , 2021 , 189 . |
| MLA | Jiao, Yujia et al. "Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition" . | Vacuum 189 (2021) . |
| APA | Jiao, Yujia , Jiang, Qian , Meng, Junhua , Zhao, Jinliang , Yin, Zhigang , Gao, Hongli et al. Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition . | Vacuum , 2021 , 189 . |
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Abstract ：
The growth of trace amount of niobium (Nb) doped beta-Ga2O3 thin films have been demonstrated on (0001) sapphire substrates by radio frequency magnetron co-sputtering method. The crystallization, morphology and optical properties of Nb doped beta-Ga2O3 films have been investigated. The deep ultraviolet (DUV) photodetector with a metal-semiconductor-metal structure based on trace amount of Nb doped beta-Ga2O3 thin film was fabricated. The DUV photodetector exhibits high photo-to-dark-current ratio and fast photo-response speed, suggesting the performance of beta-Ga2O3 photodetector can be improved by doping trace amount of Nb in beta-Ga2O3 thin film.
Keyword ：
Deep ultraviolet photodetector Deep ultraviolet photodetector beta-Ga2O3 beta-Ga2O3 Photo-response Photo-response Nb-doped Nb-doped
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| GB/T 7714 | Zhang, H. , Deng, J. X. , Zhang, Q. et al. Trace amount of niobium doped beta-Ga2O3 deep ultraviolet photodetector with enhanced photo-response [J]. | OPTIK , 2021 , 243 . |
| MLA | Zhang, H. et al. "Trace amount of niobium doped beta-Ga2O3 deep ultraviolet photodetector with enhanced photo-response" . | OPTIK 243 (2021) . |
| APA | Zhang, H. , Deng, J. X. , Zhang, Q. , Wang, X. L. , Meng, J. H. , Xu, Z. Y. et al. Trace amount of niobium doped beta-Ga2O3 deep ultraviolet photodetector with enhanced photo-response . | OPTIK , 2021 , 243 . |
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Abstract ：
Surface plasmonic effect of metal nanoparticles is an effective method to improve the power conversion efficiency (PCE) of solar cells. In this work, the PCE of bulk heterojunction (BHJ) polymer solar cells was improved by Au nanoparticles (NPs). The Au NPs were embedded into PEDOT:PSS hole transport layer by spin coating on the ITO substrates. The Au NPs with a diameter of similar to 16 nm were prepared by the micellar method using polystyrene-block-poly (2-vinylpyridine) diblock polymer. The Au NPs prepared by this method are distributed uniformly in size and without agglomeration on the substrates. From both experimental and theoretical results, it can be seen that the light absorption of the active layer was increased because of the surface plasmonic effect of Au NPs. Meanwhile, the carrier transport performance of PEDOT:PSS was enhanced with introduced Au NPs. As a result, the PCE of BHJ solar cells was improved from 2.81 to 3.25% by incorporating Au NPs.
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| GB/T 7714 | Gao, Hongli , Meng, Junhua , Sun, Junjie et al. Enhanced performance of polymer solar cells based on P3HT:PCBM via incorporating Au nanoparticles prepared by the micellar method [J]. | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , 2020 , 31 (13) : 10760-10767 . |
| MLA | Gao, Hongli et al. "Enhanced performance of polymer solar cells based on P3HT:PCBM via incorporating Au nanoparticles prepared by the micellar method" . | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 31 . 13 (2020) : 10760-10767 . |
| APA | Gao, Hongli , Meng, Junhua , Sun, Junjie , Deng, Jinxiang . Enhanced performance of polymer solar cells based on P3HT:PCBM via incorporating Au nanoparticles prepared by the micellar method . | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , 2020 , 31 (13) , 10760-10767 . |
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Abstract ：
Recently, the deep ultraviolet (DUV) photodetectors fabricated from two-dimensional (2D) hexagonal boron nitride (h-BN) layers have emerged as a hot research topic. However, the existing studies show that the h-BN-based photodetectors have relatively poor performance. In this work, C doping is utilized to modulate the properties of h-BN and improve the performance of the h-BN-based photodetectors. We synthesized the h-BN atomic layers with various C concentrations varying from 0 to 10.2 atom % by ion beam sputtering deposition through controlling the sputtering atmosphere. The h-BN phase remains stable when a small amount of C is incorporated into h-BN, whereas the introduction of a large amount of C impurities leads to the rapidly deteriorated crystallinity of h-BN. Furthermore, the DUV photodetectors based on C-doped h-BN layers were fabricated, and the h-BN-based photodetector with 7.5 atom % C exhibits the best performance with a responsivity of 9.2 mA.W-1, which is significantly higher than that of the intrinsic h-BN device. This work demonstrates that the C doping is a feasible and effective method for improving the performance of h-BN photodetectors.
Keyword ：
two-dimensional materials two-dimensional materials doping doping hexagonal boron-carbon-nitrogen hexagonal boron-carbon-nitrogen hexagonal boron nitride hexagonal boron nitride ion beam sputtering deposition ion beam sputtering deposition deep ultraviolet photodetectors deep ultraviolet photodetectors
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| GB/T 7714 | Wang, Ye , Meng, Junhua , Tian, Yan et al. Deep Ultraviolet Photodetectors Based on Carbon-Doped Two-Dimensional Hexagonal Boron Nitride [J]. | ACS APPLIED MATERIALS & INTERFACES , 2020 , 12 (24) : 27361-27367 . |
| MLA | Wang, Ye et al. "Deep Ultraviolet Photodetectors Based on Carbon-Doped Two-Dimensional Hexagonal Boron Nitride" . | ACS APPLIED MATERIALS & INTERFACES 12 . 24 (2020) : 27361-27367 . |
| APA | Wang, Ye , Meng, Junhua , Tian, Yan , Chen, Yanan , Wang, Gaokai , Yin, Zhigang et al. Deep Ultraviolet Photodetectors Based on Carbon-Doped Two-Dimensional Hexagonal Boron Nitride . | ACS APPLIED MATERIALS & INTERFACES , 2020 , 12 (24) , 27361-27367 . |
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Abstract ：
Two-dimensional (2D) hexagonal boron nitride (h-BN) is considered as an ideal dielectric layer or substrate for other 2D heterostructure electronic devices. However, reported 2D h-BN films consist mostly of small sized and randomly oriented h-BN domains, resulting in a high density of grain boundaries during coalescence. Here, we report the growth of unidirectionally aligned h-BN domains in a large area on the Ni(111) epitaxial thin film on MgO(111) substrate by ion beam sputtering deposition. It is found that the in-plane orientation of the underlying Ni thin film, which can be controlled by its deposition temperature, plays a key role in the h-BN domain alignment. Furthermore, density functional theory calculations are performed to determine the favorable configuration of the triangular shaped h-BN domains on Ni(111). This work provides a promising approach to prepare unidirectionally aligned h-BN domains in a large area, and thus it is possible to achieve wafer-scale single crystal h-BN by stitching these h-BN domains.
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| GB/T 7714 | Meng, Junhua , Ming, Bangming , Zhang, Xingwang et al. Controlled Growth of Unidirectionally Aligned Hexagonal Boron Nitride Domains on Single Crystal Ni (111)MgO Thin Films [J]. | CRYSTAL GROWTH & DESIGN , 2019 , 19 (1) : 453-459 . |
| MLA | Meng, Junhua et al. "Controlled Growth of Unidirectionally Aligned Hexagonal Boron Nitride Domains on Single Crystal Ni (111)MgO Thin Films" . | CRYSTAL GROWTH & DESIGN 19 . 1 (2019) : 453-459 . |
| APA | Meng, Junhua , Ming, Bangming , Zhang, Xingwang , Gao, Menglei , Cheng, Likun , Yin, Zhigang et al. Controlled Growth of Unidirectionally Aligned Hexagonal Boron Nitride Domains on Single Crystal Ni (111)MgO Thin Films . | CRYSTAL GROWTH & DESIGN , 2019 , 19 (1) , 453-459 . |
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