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学者姓名：王晓蕾
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Abstract ：
Realizing magnetic skyrmions in two-dimensional (2D) van der Waals (vdW) ferromagnets offers unparalleled prospects for future spintronic applications. The room-temperature ferromagnet Fe(3)GaTe(2 )provides an ideal platform for tailoring these magnetic solitons. Here, skyrmions of distinct topological charges are artificially introduced and engineered by using magnetic force microscopy (MFM). The skyrmion lattice is realized by a specific field-cooling process and can be further erased and painted via delicate manipulation of the tip stray field. The skyrmion lattice with opposite topological charges (S = +/- 1) can be tailored at the target regions to form topological skyrmion junctions (TSJs) with specific configurations. The delicate interplay of TSJs and spin-polarized device current were finally investigated via the in situ transport measurements, alongside the topological stability of TSJs. Our results demonstrate that Fe(3)GaTe(2 )not only serves as a potential building block for skyrmion-based spintronic devices, but also presents prospects for Fe3GaTe2 -based heterostructures with the engineered topological spin textures.
Keyword ：
topologicalskyrmion junctions topologicalskyrmion junctions skyrmion skyrmion vander Waals ferromagnets vander Waals ferromagnets magnetic force microscopy magnetic force microscopy topology-engineering topology-engineering
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| GB/T 7714 | Mi, Shuo , Guo, Jianfeng , Hu, Guojing et al. Real-Space Topology-Engineering of Skyrmionic Spin Textures in a van der Waals Ferromagnet Fe3GaTe2 [J]. | NANO LETTERS , 2024 , 24 (41) : 13094-13102 . |
| MLA | Mi, Shuo et al. "Real-Space Topology-Engineering of Skyrmionic Spin Textures in a van der Waals Ferromagnet Fe3GaTe2" . | NANO LETTERS 24 . 41 (2024) : 13094-13102 . |
| APA | Mi, Shuo , Guo, Jianfeng , Hu, Guojing , Wang, Guangcheng , Li, Songyang , Gong, Zizhao et al. Real-Space Topology-Engineering of Skyrmionic Spin Textures in a van der Waals Ferromagnet Fe3GaTe2 . | NANO LETTERS , 2024 , 24 (41) , 13094-13102 . |
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Abstract ：
分子化学和自旋电子学两个领域的交叉融合，使得利用分子多样性的优势来干预或调控自旋电子器件成为可能。具有分子界面的新型有机/无机功能器件的开发，成为信息存储领域的研究热点。通常自旋极化来源于由磁场控制的磁性材料。然而，最近的一些研究发现，非磁性的手性分子可以通过其自身的手性螺旋结构产生自旋极化，这种现象被称作手性诱导的自旋选择性（CISS）效应。相比于常规铁磁金属，基于分子手性结构的CISS效应有着高效的自旋极化、优异的分子界面、简单的制备流程和极低的生产成本等众多优点，实现了无需外界磁场和铁磁电极的高效率自旋注入。从CISS效应相关研究的实验结果、理论模型和器件性能等方面介绍近些年来CISS领域的最新研究进展，及利用基于手性分子的自旋电子器件进行信息存储和逻辑编译的关键技术，为自旋电子学器件的实际应用提供了一个可行的方向。
Keyword ：
分子界面 分子界面 自旋极化 自旋极化 自旋选择性 自旋选择性 自旋注入 自旋注入 手性分子 手性分子 自旋电子学器件 自旋电子学器件
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| GB/T 7714 | 张钰 , 尚紫璇 , 王光成 et al. 手性分子自旋极化与电子器件应用 [J]. | 稀有金属 , 2023 , 47 (08) : 1163-1177 . |
| MLA | 张钰 et al. "手性分子自旋极化与电子器件应用" . | 稀有金属 47 . 08 (2023) : 1163-1177 . |
| APA | 张钰 , 尚紫璇 , 王光成 , 王晓蕾 . 手性分子自旋极化与电子器件应用 . | 稀有金属 , 2023 , 47 (08) , 1163-1177 . |
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Abstract ：
By substituting the oxygen evolution reaction (OER) with the anodic urea oxidation reaction (UOR), it not only reduces energy consumption for green hydrogen generation but also allows purification of urea-rich wastewater. Spin engineering of the d orbital and oxygen-containing adsorbates has been recognized as an effective pathway for enhancing the performance of electrocatalysts. In this work, we report the fabrication of a bifunctional electrocatalyst composed of amorphous RuO2-coated NiO ultrathin nanosheets (a-RuO2/NiO) with abundant amorphous/crystalline interfaces for hydrogen evolution reaction (HER) and UOR. Impressively, only 1.372 V of voltage is required to attain a current density of 10 mA cm(-2) over a urea electrolyzer. The increased oxygen vacancies in a-RuO2/NiO by incorporation of amorphous RuO2 enhance the total magnetization and entail numerous spin-polarized electrons during the reaction, which speeds up the UOR reaction kinetics. The density functional theory study reveals that the amorphous/crystalline interfaces promote charge-carrier transfer, and the tailored d-band center endows the optimized adsorption of oxygen-generated intermediates. This kind of oxygen vacancy induced spin-polarized electrons toward boosting HER and UOR kinetics and provides a reliable reference for exploration of advanced electrocatalysts.
Keyword ：
spin-polarized electrons spin-polarized electrons ureaoxidation reaction ureaoxidation reaction electrocatalysis electrocatalysis hydrogenevolution reaction hydrogenevolution reaction oxygen vacancy oxygen vacancy
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| GB/T 7714 | Li, Linfeng , Zhang, Xia , Humayun, Muhammad et al. Manipulation of Electron Spins with Oxygen Vacancy on Amorphous/Crystalline Composite-Type Catalyst [J]. | ACS NANO , 2023 , 18 (1) : 1214-1225 . |
| MLA | Li, Linfeng et al. "Manipulation of Electron Spins with Oxygen Vacancy on Amorphous/Crystalline Composite-Type Catalyst" . | ACS NANO 18 . 1 (2023) : 1214-1225 . |
| APA | Li, Linfeng , Zhang, Xia , Humayun, Muhammad , Xu, Xuefei , Shang, Zixuan , Li, Zhishan et al. Manipulation of Electron Spins with Oxygen Vacancy on Amorphous/Crystalline Composite-Type Catalyst . | ACS NANO , 2023 , 18 (1) , 1214-1225 . |
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Abstract ：
Neuromorphic computing and artificial neural networks have been developed in recent years. The oxygen vacancies in the oxide compounds have similar biological dynamics to Ca2+in brain, showing obvious advantages of compatibility with high-density cross-arrays, and are expected to achieve synaptic devices that mimic organisms. In this work, we carried out a comparative study to reveal the crucial roles played by oxygen vacancies and interface roughness, based on the non-volatile ZnO memristor. The studied system for resistive switching consists of undoped ZnO film-device sandwiched between a top and a bottom Pt electrodes, allowing the current to flow uniformly perpendicular to the film. The distribution of oxygen vacancies in the sample could be modulated by applying current. After an irreversible forming step, the I-V curve becomes hysteretic, while a threshold current produces an obvious change in the resistance. We observed different electrical rectification behaviors by using different oxygen pressures and changing the roughness of bottom Pt/ZnO interface during growth. Our investigations on the modulation of resistive switching in oxide devices are very important for the development of neural networks based on the non-volatile memory.
Keyword ：
Synaptic devices Synaptic devices ZnO memristor ZnO memristor Oxygen vacancies Oxygen vacancies Rectification behaviors Rectification behaviors Interface roughness Interface roughness Resistive switching Resistive switching
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| GB/T 7714 | Xu, Jiao , Shang, Zixuan , Hou, Zhipeng et al. Exploring the crucial influence on the electrical rectification of ZnO films [J]. | SURFACES AND INTERFACES , 2022 , 31 . |
| MLA | Xu, Jiao et al. "Exploring the crucial influence on the electrical rectification of ZnO films" . | SURFACES AND INTERFACES 31 (2022) . |
| APA | Xu, Jiao , Shang, Zixuan , Hou, Zhipeng , Wang, Xiaolei . Exploring the crucial influence on the electrical rectification of ZnO films . | SURFACES AND INTERFACES , 2022 , 31 . |
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Abstract ：
Achieving highly efficient spin injection has been a challenging problem for a long time in spin logic devices. The chiral-induced spin selectivity (CISS) effect could induce spin polarization of electron transmission by chiral structure, providing a promising solution to resolve the above bottleneck. In this work, the significant CISS effect by self-assembled chiral organic molecules with helical structure was achieved on the copper (Cu) substrate covered with gold (Au) layer. We find that the spin polarization induced by the chiral molecules is more than 80%. Serving as an ultra efficient spin filter, the chiral organic molecules is demonstrated to be an effective way to generate pure spin currents and achieve highly efficient spin injection without ferromagnetic electrodes or external magnetic field. Based on these properties, a CISS based reconfigurable logic device is proposed. Due to the high spin injection efficiency, this CISS based device can realize 6 different logic operations with low energy consumption (1.2 pJ) and high speed (3.6 ns).
Keyword ：
self-assembled monolayer self-assembled monolayer Chiral organic molecules Chiral organic molecules Atomic measurements Atomic measurements Voltage measurement Voltage measurement spin injection efficiency spin injection efficiency Superconducting magnets Superconducting magnets Magnetic moments Magnetic moments chiral-induced spin selectivity chiral-induced spin selectivity Pollution measurement Pollution measurement Voltage control Voltage control reconfigurable logic device reconfigurable logic device Switches Switches
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| GB/T 7714 | Yang, Qianqian , Zhang, Zhizhong , Jiang, Xing'an et al. Realization of High Spin Injection Through Chiral Molecules and Its Application in Logic Device [J]. | IEEE ELECTRON DEVICE LETTERS , 2022 , 43 (11) : 1862-1865 . |
| MLA | Yang, Qianqian et al. "Realization of High Spin Injection Through Chiral Molecules and Its Application in Logic Device" . | IEEE ELECTRON DEVICE LETTERS 43 . 11 (2022) : 1862-1865 . |
| APA | Yang, Qianqian , Zhang, Zhizhong , Jiang, Xing'an , Wang, Xiaolei , Wang, Xueyun , Shang, Zixuan et al. Realization of High Spin Injection Through Chiral Molecules and Its Application in Logic Device . | IEEE ELECTRON DEVICE LETTERS , 2022 , 43 (11) , 1862-1865 . |
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Abstract ：
氢气作为一种清洁无污染的可再生能源,可以有效地解决全球能源危机和环境污染问题.低能耗水裂解制氢是公认的未来清洁制氢的有效途径之一.水裂解反应分为阳极上发生的析氧反应(OER)和阴极上发生的析氢反应,由于阳极半反应涉及四电子过程,反应动力学缓慢,进而导致整个水分解产氢效率低下,成为规模化水裂解制氢应用的瓶颈.贵金属Ir基和Ru基催化剂具有较好的OER催化性能,但其价格高昂和低储量极大地限制了其大规模应用.因此,设计出性能优良的非贵金属OER催化剂,对于促进电催化水裂解制氢领域的发展具有重要意义.自旋调控可以调节d-轨道电子与含氧物种之间的自旋占据态,进而改变含氧物种的吸附能,提升催化反应动力学.然而,自旋调控如何提升电催化水氧化及其内部的关联性鲜有报道.本文报道了一种(Co,Ni)Se2/C@FeOOH笼状纳米结构的自旋调控工程以提升其析氧反应活性.以金属有机框架材料ZIF-67为前驱体,采用离子交换方法和化学气相沉积法合成了(Co,Ni)Se2/C中空笼状纳米结构,接着通过化学水浴沉积法用FeOOH进行修饰,进一步提高了电催化反应动力学.磁化测试结果表明,(Co,Ni)Se2/C@FeOOH样品的极化自旋数(μb=6.966 μb/f.u)高于(Co,Ni)Se2/C样品的极化自旋数(μb=6.398μb/f.u),从而有利于含氧中间体的吸附和脱附,这与表面价带谱的结果一致.与(Co,Ni)Se2/C相比,(Co,Ni)Se2/C@FeOOH样品具有更强的铁磁性,电磁感应促进了磁性粒子最外层电子的自旋.电子自旋的增加有利于(Co,Ni)Se2/C@FeOOH样品最外层电子能级的跃迁,在3d-轨道上产生更多的空电子轨道和未成对电子,有利于电子转移和氧吸附.Ni,Co和Fe之间的π电子在界面处的局域化重组再分配优化了对含氧物种的吸附与脱附自由能,提升了OER催化性能.此外,所设计的中空笼状纳米结构和杂原子掺杂碳基体对提高OER活性也有重要作用.因此,在1.0 mol/L KOH碱性溶液中,(Co,Ni)Se2/C@FeOOH催化剂展现出较好的析氧反应性能,在10 mA cm-2电流下的过电位为241 mV,塔菲尔斜率为44 mV dec-1,明显优于原先的(Co,Ni)Se2/C催化剂.本文将为高效OER电催化剂的设计提供一种新的思路和方法.
Keyword ：
羟基氧化铁 羟基氧化铁 析氧反应 析氧反应 d-轨道电子 d-轨道电子 中空笼状纳米结构 中空笼状纳米结构 自旋工程 自旋工程
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| GB/T 7714 | 谷雨 , 王晓蕾 , Muhammad Humayun et al. (Co,Ni) Se2/C@FeOOH中空笼状纳米结构的自旋调控加速水氧化催化研究 [J]. | 催化学报 , 2022 , 43 (3) : 839-850 . |
| MLA | 谷雨 et al. "(Co,Ni) Se2/C@FeOOH中空笼状纳米结构的自旋调控加速水氧化催化研究" . | 催化学报 43 . 3 (2022) : 839-850 . |
| APA | 谷雨 , 王晓蕾 , Muhammad Humayun , 李林峰 , 孙华传 , 许雪飞 et al. (Co,Ni) Se2/C@FeOOH中空笼状纳米结构的自旋调控加速水氧化催化研究 . | 催化学报 , 2022 , 43 (3) , 839-850 . |
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Abstract ：
The metal-insulator transition (MIT) is normally assisted by certain external power input, such as temperature, pressure, strain, or doping. However, these may increase the disorder of the crystal or cause other effects, which makes device fabrication complicated and/or hinders large-scale application. Here, we adopt a new approach to obtain robust modulation of physical properties in magnetic semiconductor (Ga,Mn)As by surface molecular modification. We have probed both sides of the MIT with n-and p-type molecular doping. Density functional theory calculations are carried out to determine the stable absorption configuration and charge transfer mechanism of electron acceptor and donor molecules on the semiconductor surface. Both experimental and theoretical results confirm a remarkable modulation in carrier concentrations without introducing impurities or defects. This work points out the possibility of effectively tuning physical properties of solid-state materials by functional molecules, which is clean, flexible, nondestructive, and easily achieved.
Keyword ：
metal-insulator transition metal-insulator transition modulation of electronic states modulation of electronic states molecular absorption molecular absorption carrier concentration carrier concentration charge transfer mechanism charge transfer mechanism
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| GB/T 7714 | Wang, Xiaolei , Zhang, Chen , Wang, Hailong et al. Exploring the Metal-Insulator Transition in (Ga,Mn)As by Molecular Absorption [J]. | NANO LETTERS , 2022 , 22 (22) : 9190-9197 . |
| MLA | Wang, Xiaolei et al. "Exploring the Metal-Insulator Transition in (Ga,Mn)As by Molecular Absorption" . | NANO LETTERS 22 . 22 (2022) : 9190-9197 . |
| APA | Wang, Xiaolei , Zhang, Chen , Wang, Hailong , Yuan, Ye , Shang, Zixuan , Tan, Bi et al. Exploring the Metal-Insulator Transition in (Ga,Mn)As by Molecular Absorption . | NANO LETTERS , 2022 , 22 (22) , 9190-9197 . |
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Abstract ：
Spintronics and molecular chemistry have achieved remarkable achievements separately. Their combination can apply the superiority of molecular diversity to intervene or manipulate the spin-related properties. It inevitably brings in a new type of functional devices with a molecular interface, which has become an emerging field in information storage and processing. Normally, spin polarization has to be realized by magnetic materials as manipulated by magnetic fields. Recently, chiral-induced spin selectivity (CISS) was discovered surprisingly that non-magnetic chiral molecules can generate spin polarization through their structural chirality. Here, the recent progress of integrating the strengths of molecular chemistry and spintronics is reviewed by introducing the experimental results, theoretical models, and device performances of the CISS effect. Compared to normal ferromagnetic metals, CISS originating from a chiral structure has great advantages of high spin polarization, excellent interface, simple preparation process, and low cost. It has the potential to obtain high efficiency of spin injection into metals and semiconductors, getting rid of magnetic fields and ferromagnetic electrodes. The physical mechanisms, unique advantages, and device performances of CISS are sequentially clarified, revealing important issues to current scientific research and industrial applications. This mini-review points out a key technology of information storage for future spintronic devices without magnetic components.
Keyword ：
molecular chemistry molecular chemistry spintronic devices spintronic devices spin injection spin injection information storage information storage chiral-induced spin selectivity chiral-induced spin selectivity
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| GB/T 7714 | Shang, Zixuan , Liu, Tianhan , Yang, Qianqian et al. Chiral-Molecule-Based Spintronic Devices [J]. | SMALL , 2022 , 18 (32) . |
| MLA | Shang, Zixuan et al. "Chiral-Molecule-Based Spintronic Devices" . | SMALL 18 . 32 (2022) . |
| APA | Shang, Zixuan , Liu, Tianhan , Yang, Qianqian , Cui, Shuainan , Xu, Kailin , Zhang, Yu et al. Chiral-Molecule-Based Spintronic Devices . | SMALL , 2022 , 18 (32) . |
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Abstract ：
Developing a single-phase self-rectifying memristor is desirable and functionally adaptive to dynamic environmental stimuli variations. Here, the authors report a single phase CuInP2S6 based memristor with continuously tunable current rectifying. Developing a single-phase self-rectifying memristor with the continuously tunable feature is structurally desirable and functionally adaptive to dynamic environmental stimuli variations, which is the pursuit of further smart memristors and neuromorphic computing. Herein, we report a van der Waals ferroelectric CuInP2S6 as a single memristor with superior continuous modulation of current and self-rectifying to different bias stimuli (sweeping speed, direction, amplitude, etc.) and external mechanical load. The synergetic contribution of controllable Cu+ ions migration and interfacial Schottky barrier is proposed to dynamically control the current flow and device performance. These outstanding sensitive features make this material possible for being superior candidate for future smart memristors with bidirectional operation mode and strong recognition to input faults and variations.
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| GB/T 7714 | Jiang, Xingan , Wang, Xueyun , Wang, Xiaolei et al. Manipulation of current rectification in van der Waals ferroionic CuInP2S6 [J]. | NATURE COMMUNICATIONS , 2022 , 13 (1) . |
| MLA | Jiang, Xingan et al. "Manipulation of current rectification in van der Waals ferroionic CuInP2S6" . | NATURE COMMUNICATIONS 13 . 1 (2022) . |
| APA | Jiang, Xingan , Wang, Xueyun , Wang, Xiaolei , Zhang, Xiangping , Niu, Ruirui , Deng, Jianming et al. Manipulation of current rectification in van der Waals ferroionic CuInP2S6 . | NATURE COMMUNICATIONS , 2022 , 13 (1) . |
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Abstract ：
The use of lead-free ceramic film materials with positive temperature coefficient of resistivity (PTCR) is widespread in temperature heaters and sensors in micro-electromechanical systems. In this research, the out of plane transport properties of the BiFeO3 (BFO) films have been studied. Surprisingly, PTCR was found in the BFO ceramic films due to the strongly correlated interaction between the multiferroic material BFO and the superconductor YBCO perovskite oxides. To our knowledge, this is the first report on the PTCR effect of BFO films. The BFO/YBCO interface and the bulk conductivity of BFO are important for the PTCR effect, as they make it possible to compare the transport properties of Au/BFO/YBCO- and YBCO/BFO/YBCO-type structures. PTCR was observed in Au/BFO/YBCO at a bias voltage of more than 2 V, but not in the YBCO/BFO/YBCO, even with a 40 V bias voltage. PTCR was found after BFO breakdown of a YBCO/BFO/YBCO capacitor. This indicated that the conductivity of BFO is critical for PTCR. The dependence of PTCR on the superconducting transition temperature illustrates that a cooper-pair can be injected into BFO. Our work presents a method by which to produce a lead-free ceramic film material with PTCR.
Keyword ：
BiFeO3 BiFeO3 superconductor superconductor transport properties transport properties PTCR PTCR
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| GB/T 7714 | Yang, Qianqian , Wang, Xiaolei , Yang, Kaihua et al. The Positive Temperature Coefficient of Resistivity in BiFeO3 Films [J]. | NANOMATERIALS , 2022 , 12 (6) . |
| MLA | Yang, Qianqian et al. "The Positive Temperature Coefficient of Resistivity in BiFeO3 Films" . | NANOMATERIALS 12 . 6 (2022) . |
| APA | Yang, Qianqian , Wang, Xiaolei , Yang, Kaihua , Deng, Jinxiang , Nie, Ruijuan , Deng, Qingsong et al. The Positive Temperature Coefficient of Resistivity in BiFeO3 Films . | NANOMATERIALS , 2022 , 12 (6) . |
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