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学者姓名：闫胤洲
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Abstract ：
一种制备β‑Ga2O3微米带的方法涉及半导体材料和光学技术领域。其以Ga2O3粉末和石墨粉为原料；球磨烘干、200目过筛；装入长条橡胶气球，压实封闭、抽真空，等静压下制成粗细、密度均匀的圆柱形料棒；将圆柱形料棒放入光学浮区炉中，设置浮区炉卤钨灯输出功率为720W/h，通入氧气，光照一定时间，经过光学气化过饱和析出的生长过程，制备β‑Ga2O3微米带，该微米带尺寸较大，形貌完整，可有效构建光电器件。加快了氧化镓的一维微纳结构生长的时间，节约了能源，降低了生产成本。
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| GB/T 7714 | 蒋毅坚 , 潘永漫 , 闫胤洲 et al. 一种制备β-Ga2O3微米带的方法 : CN202210859639.X[P]. | 2022-07-21 . |
| MLA | 蒋毅坚 et al. "一种制备β-Ga2O3微米带的方法" : CN202210859639.X. | 2022-07-21 . |
| APA | 蒋毅坚 , 潘永漫 , 闫胤洲 , 王强 . 一种制备β-Ga2O3微米带的方法 : CN202210859639.X. | 2022-07-21 . |
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Abstract ：
ZnO是第三代半导体的代表之一，可作为紫外光致发光与多共振模式激光的载体，尤其以光学气化过饱和析出法（OVSP）制备的ZnO微米晶近年来在光催化、高效多彩光源、高效电致发光等方面显示出重要优势，但其制备成本较高、生产效率低下，阻碍了其大规模器件化的发展。针对上述问题，基于有限元分析的结果，设计并搭建了一套工作波长在1 080nm，功率18%(@2500W）激光加热的微米晶生长装置。以ZnO为原料验证了所研制装置的可行性与实用性。结果表明，该装置制备产物与OVSP法制备产物在形貌、结构、发光性能上非常接近，生产效率得到极大提高（～500%）。利用研制的生长装置，成功制备出了具有完整六边形截面形貌...
Keyword ：
拉曼光谱 拉曼光谱 激光材料加工 激光材料加工 光致发光光谱 光致发光光谱 ZnO微米晶 ZnO微米晶
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| GB/T 7714 | 廖逸民 , 闫胤洲 , 王强 et al. ZnO微米晶的激光制备装置及发光性能研究 [J]. | 光谱学与光谱分析 , 2022 , 42 (10) : 3000-3005 . |
| MLA | 廖逸民 et al. "ZnO微米晶的激光制备装置及发光性能研究" . | 光谱学与光谱分析 42 . 10 (2022) : 3000-3005 . |
| APA | 廖逸民 , 闫胤洲 , 王强 , 杨立学 , 潘永漫 , 邢承 et al. ZnO微米晶的激光制备装置及发光性能研究 . | 光谱学与光谱分析 , 2022 , 42 (10) , 3000-3005 . |
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Abstract ：
Here we report a novel ZnO microtubular homojunction photodiode (PD) fabricated by optical vapor supersaturated precipitation (OVSP) and sputtering methods. The acceptor-rich ZnO (A-ZnO) microtube grown by OVSP possesses a great UV-visible rejection ratio of similar to 3.77 and a high external quantum yield of 1.4 x 10(3)%. The formed A-ZnO/n-ZnO homojunction UV-PD realizes an ultrafast photoresponse down to 6 ms (three orders of magnitude faster) and boosts the sensitivity by 2.6-folds with respect to the bare A-ZnO microtube. It is beneficial for weak-signal UV detection down to the threshold of 0.4 mW/cm(2) under random excitation conditions, by which the detectivity up to 6.67 x 10(12) cmHz(1/2)/W is achieved. The ZnO microtubular homojunction paves a new way for design of high-performance wide-bandgap semiconductor UV-PDs, promoting their practical applications in future. (C) 2021 Elsevier B.V. All rights reserved.
Keyword ：
ZnO microtube ZnO microtube UV photodiode UV photodiode Ultrafast response Ultrafast response Wide-bandgap semiconductor Wide-bandgap semiconductor Homojunction Homojunction
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| GB/T 7714 | Wang, Qiang , Zou, Anshan , Yang, Lixue et al. Wide-bandgap semiconductor microtubular homojunction photodiode for high-performance UV detection [J]. | JOURNAL OF ALLOYS AND COMPOUNDS , 2021 , 887 . |
| MLA | Wang, Qiang et al. "Wide-bandgap semiconductor microtubular homojunction photodiode for high-performance UV detection" . | JOURNAL OF ALLOYS AND COMPOUNDS 887 (2021) . |
| APA | Wang, Qiang , Zou, Anshan , Yang, Lixue , Liu, Beiyun , Zhang, Yulin , Chen, Fei et al. Wide-bandgap semiconductor microtubular homojunction photodiode for high-performance UV detection . | JOURNAL OF ALLOYS AND COMPOUNDS , 2021 , 887 . |
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Abstract ：
The roll-off of quantum yield is a major challenge facing light-emitting diodes due to the inevitable predominant non-radiative recombination with temperature elevation. Here we report highly-efficient intrinsic electroluminescence (EL) from a biased highly-compensated ZnO:Ga (HC-GZO) microrod with a metal-semiconductor-metal (MSM) structure at high temperatures. The origin of the EL emission is the current-induced Joule heating activation of electric-thermal tunneling electrons and the following spontaneous radiation from multiple donor-acceptor-pair (DAP) recombination. The reduced oxygen vacancy (V-O) concentration via Ga doping promotes the electron-phonon coupling to lower the temperature threshold down to similar to 650 K, facilitating the stability and durability of MSM-EL devices. Meanwhile, an extra channel of radiative recombination is established by introducing Ga donor dopants, expanding the luminescence color space from orange (0.496, 0.445) to red (0.529, 0.408) by varying the V-O concentration in HC-GZO microrods. The present work motivates research on the mechanism and architectural design for novel electric-thermal tunneling induced efficient radiative emission devices at high temperatures using bandgap-engineered semiconductors.
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| GB/T 7714 | Yan, Yinzhou , Xing, Cheng , Liu, Wei et al. Current-induced thermal tunneling electroluminescence via multiple donor-acceptor-pair recombination [J]. | JOURNAL OF MATERIALS CHEMISTRY C , 2021 , 9 (4) : 1174-1182 . |
| MLA | Yan, Yinzhou et al. "Current-induced thermal tunneling electroluminescence via multiple donor-acceptor-pair recombination" . | JOURNAL OF MATERIALS CHEMISTRY C 9 . 4 (2021) : 1174-1182 . |
| APA | Yan, Yinzhou , Xing, Cheng , Liu, Wei , Wang, Qiang , Xu, Chunxiang , Jiang, Yijian . Current-induced thermal tunneling electroluminescence via multiple donor-acceptor-pair recombination . | JOURNAL OF MATERIALS CHEMISTRY C , 2021 , 9 (4) , 1174-1182 . |
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Abstract ：
<正>介电微球腔作为易于制备、结构简单的光学微腔代表,具有全光谱低损耗光场调控能力,在纳米颗粒探测、上/下转换荧光增强、多光子非线性效应、增强拉曼散射、光学超分辨成像等领域得到广泛的关注~([1,2])。近年来,本课题组在基于介电微球腔的垂直荧光增益结构及其介观光场调控机制方面进行了深入的研究,全面揭示了微球腔的米散射共振聚焦、光学回音壁模式、定向天线准直发射效应对发光材料的荧光增益机制。
Keyword ：
光学微腔 光学微腔 结构设计 结构设计 微球腔 微球腔
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| GB/T 7714 | 闫胤洲 . 基于光学微腔的微纳发光增益机制及结构设计 [C] //第二届全国光电材料与器件学术研讨会摘要集 . 2021 . |
| MLA | 闫胤洲 . "基于光学微腔的微纳发光增益机制及结构设计" 第二届全国光电材料与器件学术研讨会摘要集 . (2021) . |
| APA | 闫胤洲 . 基于光学微腔的微纳发光增益机制及结构设计 第二届全国光电材料与器件学术研讨会摘要集 . (2021) . |
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Abstract ：
Silver nanowires (Ag-NWs), which possess a high aspect ratio with superior electrical conductivity and transmittance, show great promise as flexible transparent electrodes (FTEs) for future electronics. Unfortunately, the fabrication of Ag-NW conductive networks with low conductivity and high transmittance is a major challenge due to the ohmic contact resistance between Ag-NWs. Here we report a facile method of fabricating high-performance Ag-NW electrodes on flexible substrates. A 532 nm nanosecond pulsed laser is employed to nano-weld the Ag-NW junctions through the energy confinement caused by localized surface plasmon resonance, reducing the sheet resistance and connecting the junctions with the substrate. Additionally, the thermal effect of the pulsed laser on organic substrates can be ignored due to the low energy input and high transparency of the substrate. The fabricated FTEs demonstrate a high transmittance (up to 85.9%) in the visible band, a low sheet resistance of 11.3 omega/sq, high flexibility and strong durability. The applications of FTEs to 2D materials and LEDs are also explored. The present work points toward a promising new method for fabricating high-performance FTEs for future wearable electronic and optoelectronic devices.
Keyword ：
laser nano-welding laser nano-welding organic electronics organic electronics flexible transparent electrodes flexible transparent electrodes silver nanowires silver nanowires
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| GB/T 7714 | Wang, Tao , Yan, Yinzhou , Zhu, Liye et al. High-Performance Flexible Transparent Electrodes Fabricated via Laser Nano-Welding of Silver Nanowires [J]. | CRYSTALS , 2021 , 11 (8) . |
| MLA | Wang, Tao et al. "High-Performance Flexible Transparent Electrodes Fabricated via Laser Nano-Welding of Silver Nanowires" . | CRYSTALS 11 . 8 (2021) . |
| APA | Wang, Tao , Yan, Yinzhou , Zhu, Liye , Li, Qian , He, Jing , Zhang, Xiaoxia et al. High-Performance Flexible Transparent Electrodes Fabricated via Laser Nano-Welding of Silver Nanowires . | CRYSTALS , 2021 , 11 (8) . |
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Abstract ：
Here, we fabricated In2O3(ZnO)(m) (IZO) superlattice microplates with hexagon morphologies by the substrate-free optical vapor supersaturated precipitation. The IZO microplates possessed a superlattice structure with a large m number, i.e., m = 23, consisting of layered alternating stacks of octahedral InO2- as inversion boundaries and layered InZnmOm+1+ as a zig-zag modulated pattern. The Raman peak at 613 cm(-1) confirmed the superlattice of the IZO microplates. The broad asymmetric excitonic photoluminescence (PL) emission with the photon energy of 3.236 eV indicated the heavy doping of indium in the IZO, resulting a redshift of similar to 32 meV from the near-band-edge emission. The unusual negative thermal quenching of PL intensity was also observed. Moreover, the anisotropic electrical properties of the IZO superlattice microplates were manifested, for the first time, where the in-plane conductivity was two orders of magnitude higher than out-plane one. The present work provided new insight into the free-standing IZO superlattice microdevices for future optoelectronic applications.
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| GB/T 7714 | Liao, Yimin , Yan, Yinzhou , Yang, Lixue et al. Free-standing In2O3(ZnO)(m) superlattice microplates grown by optical vapor supersaturated precipitation [J]. | JOURNAL OF MATERIALS SCIENCE , 2021 , 56 (24) : 13723-13735 . |
| MLA | Liao, Yimin et al. "Free-standing In2O3(ZnO)(m) superlattice microplates grown by optical vapor supersaturated precipitation" . | JOURNAL OF MATERIALS SCIENCE 56 . 24 (2021) : 13723-13735 . |
| APA | Liao, Yimin , Yan, Yinzhou , Yang, Lixue , Pan, Yongman , Lu, Yue , Chen, Fei et al. Free-standing In2O3(ZnO)(m) superlattice microplates grown by optical vapor supersaturated precipitation . | JOURNAL OF MATERIALS SCIENCE , 2021 , 56 (24) , 13723-13735 . |
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Abstract ：
Microsphere (MS) cavities hold great potential in nanophotonics due to their extraordinary optical properties. All-inorganic trihalide perovskites with high environmental stability and easy-for-preparation have shown great promise for the next-generation optoelectronic nanodevices. Unfortunately, the nonradiative recombination of exciton is inevitably aggravating the photoluminescence quantum yields (PLQYs). Here, a microsphere-coupled CsPbBr3 perovskite vertical structure is proposed for amplification of spontaneous radiation (SR) up to 190-fold. The mechanisms of SR amplification by an MS cavity are completely revealed, for the first time, including Mie focusing (MF) for energy harvesting, directional antenna (DA) for emission convergence, and whispering-gallery modes (WGMs) for regulation of exciton dynamics. The temperature-dependent photoluminescence (PL) spectra clarify the contributions of WGMs for the boosting of SR decay and suppression of exciton–phonon interactions for giant PL enhancement. Furthermore, a straightforward approach is presented for a selective MS array capped on a perovskite microcrystal (PeMC) film as a vertical structure for patterned PL enhancement. The excitation-power- and excitation-observation-angle-dependent luminescence contrast inspire a novel anticounterfeiting strategy. The vertical architecture not only advances the understanding of microcavity-based SR amplification from PeMCs, but also offers opportunities to facilitate the synergistic manipulation of optical fields and exciton–phonon interactions for developing high-efficient optoelectronic devices. © 2021 Wiley-VCH GmbH
Keyword ：
Microcrystals Microcrystals Photoluminescence Photoluminescence Optoelectronic devices Optoelectronic devices Perovskite Perovskite Lead compounds Lead compounds Excitons Excitons Whispering gallery modes Whispering gallery modes Bromine compounds Bromine compounds Microspheres Microspheres Optical properties Optical properties Directive antennas Directive antennas Phonons Phonons Energy harvesting Energy harvesting
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| GB/T 7714 | Yan, Yinzhou , Yang, Lixue , Liu, Wei et al. Spontaneous Radiation Amplification in a Microsphere-Coupled CsPbBr3 Perovskite Vertical Structure [J]. | Advanced Optical Materials , 2021 , 9 (6) . |
| MLA | Yan, Yinzhou et al. "Spontaneous Radiation Amplification in a Microsphere-Coupled CsPbBr3 Perovskite Vertical Structure" . | Advanced Optical Materials 9 . 6 (2021) . |
| APA | Yan, Yinzhou , Yang, Lixue , Liu, Wei , Wang, Qiang , Li, Sijia , Xu, Chunxiang . Spontaneous Radiation Amplification in a Microsphere-Coupled CsPbBr3 Perovskite Vertical Structure . | Advanced Optical Materials , 2021 , 9 (6) . |
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Abstract ：
Defect manipulation plays an important role in regulating luminescence efficiency and electric performance of wide bandgap semiconductor devices. ZnO possesses complex defects, resulting in a bottleneck for p-type doping due to self-compensation. In this article, we propose a strategy to manipulate the defects in ZnO microwires (MWs) via thermal-assisted UV-photon irradiation. With this strategy, the photoluminescence (PL) and electroluminescence (EL) of the near band edge emission are enhanced. The improvement in radiation efficiency is attributed to the recrystallization of the ZnO MWs, by which the oxygen vacancy and zinc interstitial defects are suppressed. The combination of UV photo-chemical and thermal quenching for defect regulation is confirmed, for the first time, by PL and EL spectra. The work provides insights into defect engineering for luminescence efficiency improvement in wide bandgap semiconductor devices.
Keyword ：
Zinc oxide Zinc oxide luminescence efficiency luminescence efficiency Radiation effects Radiation effects II-VI semiconductor materials II-VI semiconductor materials Zinc Zinc Light emitting diodes Light emitting diodes ZnO microwires (MWs) ZnO microwires (MWs) Defect engineering Defect engineering thermal quenching thermal quenching UV irradiation UV irradiation Luminescence Luminescence Crystallization Crystallization
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| GB/T 7714 | Liu, Wei , Li, Zhuxin , Xing, Cheng et al. Thermal-Assisted UV-Photon Irradiation to Improve Crystallization and Luminescence Efficiency of ZnO [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2021 , 68 (7) : 3283-3289 . |
| MLA | Liu, Wei et al. "Thermal-Assisted UV-Photon Irradiation to Improve Crystallization and Luminescence Efficiency of ZnO" . | IEEE TRANSACTIONS ON ELECTRON DEVICES 68 . 7 (2021) : 3283-3289 . |
| APA | Liu, Wei , Li, Zhuxin , Xing, Cheng , Wang, Ru , Zhu, Yizhi , Shi, Zengliang et al. Thermal-Assisted UV-Photon Irradiation to Improve Crystallization and Luminescence Efficiency of ZnO . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2021 , 68 (7) , 3283-3289 . |
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Abstract ：
本实用新型实施例涉及晶体材料生长技术领域，提供了一种微米晶气相生长装置。微米晶气相生长装置包括：反应腔，反应腔内设置有原料棒；光束整形元器件，每个光束整形元器件上安装有激光输出头，多个光束整形元器件围绕反应腔设置并朝向原料棒定位；其中，原料棒的顶端位于经由多个光束整形元器件调整后汇聚形成的激光聚焦光斑处。本实用新型实施例提供的微米晶气相生长装置，通过设置光束整形元器件实现了光强分布的精确调控，同时将分散的光束调整成准直光束，通过多个光束整形元器件的光束聚焦，实现了聚焦光斑形状；通过设置激光输出头，将热源改为激光，增大了热源的加热功率，可实现高分解温度微米晶的生长，显著地提高了微米晶的生长速度。
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| GB/T 7714 | 蒋毅坚 , 廖逸民 , 闫胤洲 et al. 微米晶气相生长装置 : CN202020790915.8[P]. | 2020-05-13 . |
| MLA | 蒋毅坚 et al. "微米晶气相生长装置" : CN202020790915.8. | 2020-05-13 . |
| APA | 蒋毅坚 , 廖逸民 , 闫胤洲 , 王强 , 涂冶 . 微米晶气相生长装置 : CN202020790915.8. | 2020-05-13 . |
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