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学者姓名：郭伟玲
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Abstract ：
Nano-light-emitting diodes (LEDs) are ideal for ultra-high resolution displays due to their small size and high pixel density. However, traditional photolithography techniques fall short in meeting the requirements for nanoscale LED fabrication. Besides, as the size decreases and the specific surface area increases, non-radiative recombination generated by sidewalls defects becomes a significant issue, affecting the efficiency of nano-LEDs. To address this challenge, a nano-LED array with a single nanorod size of 800 nm was fabricated in this work by using nanosphere lithography and etching technology. Meanwhile, localized surface plasmons (LSPs) coupling technology was employed to enhance the PL efficiency of these nano-LEDs. By comparing with bare nano-LEDs, the PL intensity was boosted by about 43% and 129% when Ag and Ag@SiO2 nanoparticles were added separately. The existence of LSPs coupling process has been further confirmed through time-resolved photoluminescence measurement and finite element simulation analysis of different samples. The results provide compelling evidence for the LSPs coupling technology in enhancing the efficiency of nanoscale LEDs.
Keyword ：
nanorod nanorod photoluminescence photoluminescence micro-LED micro-LED
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| GB/T 7714 | Du, Zaifa , Fang, Aoqi , Tang, Penghao et al. Photoluminescence intensity enhancement of nanorod micro-LEDs via localized surface plasmon coupling [J]. | JOURNAL OF PHYSICS D-APPLIED PHYSICS , 2025 , 58 (5) . |
| MLA | Du, Zaifa et al. "Photoluminescence intensity enhancement of nanorod micro-LEDs via localized surface plasmon coupling" . | JOURNAL OF PHYSICS D-APPLIED PHYSICS 58 . 5 (2025) . |
| APA | Du, Zaifa , Fang, Aoqi , Tang, Penghao , Fan, Xinmin , Sun, Jie , Guo, Weiling et al. Photoluminescence intensity enhancement of nanorod micro-LEDs via localized surface plasmon coupling . | JOURNAL OF PHYSICS D-APPLIED PHYSICS , 2025 , 58 (5) . |
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Abstract ：
This paper reports on a micropillar micro-light-emitting diode (MP-mu LED) enhanced by a graphene conductive layer and SiO2-coated Ag nanoparticles (Ag/SiO2 NPs). The micropillar structure enables direct contact between Ag/SiO2 NPs and the quantum well (QW), leveraging localized surface plasmon resonance (LSPR) to enhance the emission of QW. The SiO2 coating on Ag serves as an insulating layer, preventing energy leakage through electron tunneling between QW-Ag and Ag-Ag interfaces. Graphene, used as a transparent conductive layer, integrates the individual micropillars into a cohesive structure, ensuring efficient current spreading and uniform light emission. Compared to plane mu LEDs of the same mesa size, the MP-mu LED with graphene transparent electrodes and LSPR enhancement shows an improvement of 44% in external quantum efficiency (EQE) and 45% in wall plug efficiency (WPE) at a current density of 1000 A/cm2. This study demonstrates the significant application potential of LSPR and micropillar structures in mu LED technology.
Keyword ：
localized surface plasmon resonance localized surface plasmon resonance micro-LED micro-LED graphene graphene micropillar micropillar
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| GB/T 7714 | Fang, Aoqi , Li, Qingqing , Liu, Jixin et al. Enhanced Light Emission of Micro LEDs Using Graphene-Connected Micropillar Structures and Ag/SiO2 Nanoparticles [J]. | ACS PHOTONICS , 2025 , 12 (3) : 1342-1350 . |
| MLA | Fang, Aoqi et al. "Enhanced Light Emission of Micro LEDs Using Graphene-Connected Micropillar Structures and Ag/SiO2 Nanoparticles" . | ACS PHOTONICS 12 . 3 (2025) : 1342-1350 . |
| APA | Fang, Aoqi , Li, Qingqing , Liu, Jixin , Du, Zaifa , Tang, Penghao , Xu, Hao et al. Enhanced Light Emission of Micro LEDs Using Graphene-Connected Micropillar Structures and Ag/SiO2 Nanoparticles . | ACS PHOTONICS , 2025 , 12 (3) , 1342-1350 . |
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Abstract ：
Micro-light-emitting diodes (mu LEDs), with their advantages of high response speed, long lifespan, high brightness, and reliability, are widely regarded as the core of next-generation display technology. However, due to issues such as high manufacturing costs and low external quantum efficiency (EQE), mu LEDs have not yet been truly commercialized. Additionally, the color conversion efficiency (CCE) of quantum dot (QD)-mu LEDs is also a major obstacle to its practical application in the display industry. In this review, we systematically summarize the recent applications of nanomaterials and nanostructures in mu LEDs and discuss the practical effects of these methods on enhancing the luminous efficiency of mu LEDs and the color conversion efficiency of QD-mu LEDs. Finally, the challenges and future prospects for the commercialization of mu LEDs are proposed.
Keyword ：
micro-LED micro-LED quantum dot quantum dot nanomaterials nanomaterials nanostructures nanostructures
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| GB/T 7714 | Fang, Aoqi , Du, Zaifa , Guo, Weiling et al. Advancements in Micro-LED Performance through Nanomaterials and Nanostructures: A Review [J]. | NANOMATERIALS , 2024 , 14 (11) . |
| MLA | Fang, Aoqi et al. "Advancements in Micro-LED Performance through Nanomaterials and Nanostructures: A Review" . | NANOMATERIALS 14 . 11 (2024) . |
| APA | Fang, Aoqi , Du, Zaifa , Guo, Weiling , Liu, Jixin , Xu, Hao , Tang, Penghao et al. Advancements in Micro-LED Performance through Nanomaterials and Nanostructures: A Review . | NANOMATERIALS , 2024 , 14 (11) . |
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Abstract ：
Graphene is well known for its excellent physical and chemical properties and can be used in various fields. Its application technology has become an important direction of research. In this study, a patterning technology of transfer-free graphene is reported, and graphene transparent electrodes of near-ultraviolet light-emitting diodes (LEDs) are fabricated accordingly. In the scheme, Ni film plays the dual role of an etching mask and graphene growth catalyst, realizing the patterning growth of graphene. An SiO2 isolation layer is deposited between Ni and the substrate, avoiding the fusing of the substrate with Ni by the high temperature of graphene growth, which makes the method applicable to nominally any high temperature-compatible metal and semiconductor substrates. Both Ni and SiO2 are then removed, thus directly achieving a good contact between graphene and the substrate. The graphene transparent electrodes fabricated by this method greatly improves the performance of near-ultraviolet LEDs, which is even better than that of indium tin oxide (ITO) in the near-ultraviolet band based on the optical measurement results. This scheme avoids any possible damage and contamination of graphene in traditional transfer and lithography patterning processes, which is scalable and suitable for real applications. A technology for the fabrication of transfer-free, patterned graphene on semiconductor or weakly catalytic metal substrate is presented, and the graphene transparent electrodes on GaN-based LED with 398 nm wavelength is fabricated accordingly.
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| GB/T 7714 | Tang, Penghao , Sun, Jie , Mei, Yu et al. A patterning technology of transfer-free graphene for transparent electrodes of near-ultraviolet light-emitting diodes [J]. | JOURNAL OF MATERIALS CHEMISTRY C , 2024 , 12 (26) : 9824-9833 . |
| MLA | Tang, Penghao et al. "A patterning technology of transfer-free graphene for transparent electrodes of near-ultraviolet light-emitting diodes" . | JOURNAL OF MATERIALS CHEMISTRY C 12 . 26 (2024) : 9824-9833 . |
| APA | Tang, Penghao , Sun, Jie , Mei, Yu , Du, Zaifa , Fang, Aoqi , Xiong, Fangzhu et al. A patterning technology of transfer-free graphene for transparent electrodes of near-ultraviolet light-emitting diodes . | JOURNAL OF MATERIALS CHEMISTRY C , 2024 , 12 (26) , 9824-9833 . |
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Abstract ：
In order to optimize the optoelectronic performance based on metal-doped ITO LED, the effect of the thickness of the ITO/SiO2 double-layer film in metal-doped ITO LED is investigated in this paper. Al-doped ITO films with thicknesses of 50 nm, 70 nm, and 110 nm were designed and prepared on the UV LED epitaxial wafer with a peak wavelength of 393 nm, and a 90 nm SiO2 passivation layer was prepared on its surface to form Al-doped ITO/SiO2 double-layer film of 140 nm, 160 nm and 200 nm on the surface of the LED. At the same time, ITO/SiO2 double-layer films of the above three thicknesses formed by undoped ITO films with SiO2 passivation layers were prepared on the slides. The photovoltaic properties of the prepared LED and the transmittance and square resistance of the ITO/SiO2 double-layer film were measured. The experimental data show that the LED with a 200 nm Al-doped ITO/SiO2 double-layer film has 13.8% and 26% enhanced optical power compared to the LED with 140 nm and 160 nm Al-doped ITO/SiO2 double-layer film system, respectively, and it has the lowest operating voltage. By comparing the optical power of LED with metal-doped ITO to the light transmittance of an undoped ITO/SiO2 double-layer film, we found that the effect of metal doping is related to the thickness of the ITO double-layer film, and there is a negative correlation between the two in a specific range.
Keyword ：
Double-layer film Double-layer film Near-UV LED Near-UV LED The thickness of ITO The thickness of ITO Metal-doped ITO Metal-doped ITO
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| GB/T 7714 | Xu, Hao , Zhou, ZhiBin , Fang, Aoqi et al. Effect of ITO/SiO2 double-layer film thickness on the optoelectronic performance of metal-doped ITO near-UV LED [J]. | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , 2023 , 129 (8) . |
| MLA | Xu, Hao et al. "Effect of ITO/SiO2 double-layer film thickness on the optoelectronic performance of metal-doped ITO near-UV LED" . | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 129 . 8 (2023) . |
| APA | Xu, Hao , Zhou, ZhiBin , Fang, Aoqi , Miao, Hui , Guo, Weiling , Sun, Jie . Effect of ITO/SiO2 double-layer film thickness on the optoelectronic performance of metal-doped ITO near-UV LED . | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , 2023 , 129 (8) . |
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Abstract ：
With the rapid development of graphene technology, today graphene performs well in the application of light-emitting diode (LED) transparent electrodes. Naturally, high-quality contact between the graphene and the GaN underneath is very important. This paper reports a process for nickel-assisted transfer-free technology of graphene chemical vapor deposition on GaN. The nickel film plays the dual role of etching mask and growth catalyst, and is removed by the subsequent "penetration etching" process, achieving good direct contact between the graphene and GaN. The results show that the graphene effectively improves the current spreading of GaN-based LEDs and enhances their electrical performance. This scheme avoids the wrinkles and cracks of graphene from the transfer process, and is not only suitable for the combination of graphene and GaN-based LEDs, but also provides a solution for the integration of graphene and other materials.
Keyword ：
transfer-free transfer-free LEDs LEDs graphene graphene CVD CVD GaN GaN transparent electrode transparent electrode
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| GB/T 7714 | Tang, Penghao , Xiong, Fangzhu , Du, Zaifa et al. Nickel-Assisted Transfer-Free Technology of Graphene Chemical Vapor Deposition on GaN for Improving the Electrical Performance of Light-Emitting Diodes [J]. | CRYSTALS , 2022 , 12 (10) . |
| MLA | Tang, Penghao et al. "Nickel-Assisted Transfer-Free Technology of Graphene Chemical Vapor Deposition on GaN for Improving the Electrical Performance of Light-Emitting Diodes" . | CRYSTALS 12 . 10 (2022) . |
| APA | Tang, Penghao , Xiong, Fangzhu , Du, Zaifa , Li, Kai , Mei, Yu , Guo, Weiling et al. Nickel-Assisted Transfer-Free Technology of Graphene Chemical Vapor Deposition on GaN for Improving the Electrical Performance of Light-Emitting Diodes . | CRYSTALS , 2022 , 12 (10) . |
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Abstract ：
Using the plasma-enhanced chemical vapor deposition method, we grow vertical graphene thin films onto SiO2/Si substrates, which is a special format of graphene composed of numerous macroscopically uniformly distributed graphene flakes approximately vertically arranged. The growth parameters, including the growth temperature, growth time and plasma power, are systematically studied and optimized. Most importantly, the function of plasma has been revealed. In the same deposition machine, we have altered the plasma electrode and heater configurations, and found that the vertical graphene can only grow in local plasma environment. That is, the samples have to be well immersed in the plasma sheath electric field. In this way, the vertical growth of graphene and the local enhancement of electric field can form a positive feedback loop, resulting in the continuous growth of vertical graphene. This experiment clarifies the function of plasma electric field in the vertical graphene growth, and can offer hints for the growth of other vertical two-dimensional materials as well. The vertical graphene films are scalable, transfer-free and lithographically patternable, which is compatible with standard semiconductor processing and promising for optoelectronic applications. We have characterized the optical properties of the as-grown vertical graphene films, where a nearly zero transmittance is observed for 1100-2600nm wavelengths, indicating a superstrong absorption in the black colored vertical graphene.
Keyword ：
Vertical graphene Vertical graphene PECVD PECVD local plasma local plasma remote plasma remote plasma
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| GB/T 7714 | Xiong, Fangzhu , Qian, Fengsong , Sun, Jie et al. PECVD of Vertical Graphene: Local Plasma or Nonlocal Plasma? [J]. | NANO , 2022 , 17 (10) . |
| MLA | Xiong, Fangzhu et al. "PECVD of Vertical Graphene: Local Plasma or Nonlocal Plasma?" . | NANO 17 . 10 (2022) . |
| APA | Xiong, Fangzhu , Qian, Fengsong , Sun, Jie , Guo, Weiling , Li, Longfei , Xie, Yiyang et al. PECVD of Vertical Graphene: Local Plasma or Nonlocal Plasma? . | NANO , 2022 , 17 (10) . |
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Abstract ：
Currently, applying graphene on GaN based electronic devices requires the troublesome, manual, lengthy, and irreproducible graphene transfer procedures, making it infeasible for real applications. Here, a semiconductor industry compatible technique for the in situ growth of patterned graphene directly onto GaN LED epiwafers for transparent heat-spreading electrode application is introduced. Pre-patterned sacrificial Co acts as both an etching mask for the GaN mesa and a catalyst for graphene growth. The Co helps in catalyzing the hydrocarbon decomposition and the subsequent graphitization, and is removed by wet etching afterwards. The use of plasma enhancement in the graphene chemical vapor deposition reduces the growth temperature to as low as 600 degrees C and improves the graphene quality, where highly crystalline graphene can be obtained in just 2 min of deposition. This method reduces the exposure of the GaN epilayers to high temperature to its limit, avoiding the well-known GaN decomposition and In segregation problems. Importantly, it can directly pattern the graphene without using additional lithographic steps and in doing so avoids any unintentional deleterious doping and damage of graphene from contact with the photoresist. The approach simplifies the fabrication and enables mass production by eliminating the bottlenecks of graphene transfer and patterning procedures. By comparing the GaN LEDs with and without graphene, we find that graphene greatly improves the device optical, electrical and thermal performances, due to the high optical transparency (91.74%) and high heat spreading capability of the graphene electrode. Unlike transferred graphene, this method is intrinsically scalable, reproducible, and compatible with the planar process, and is beneficial to the industrialization of GaN-graphene optoelectronic devices, where the integrated graphene serves as a superior sustainable and functional substitute to other transparent conducting materials such as ITO.
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| GB/T 7714 | Xiong, Fangzhu , Sun, Jie , Cole, Matthew T. et al. GaN LEDs with in situ synthesized transparent graphene heat-spreading electrodes fabricated by PECVD and penetration etching [J]. | JOURNAL OF MATERIALS CHEMISTRY C , 2022 , 10 (17) : 6794-6804 . |
| MLA | Xiong, Fangzhu et al. "GaN LEDs with in situ synthesized transparent graphene heat-spreading electrodes fabricated by PECVD and penetration etching" . | JOURNAL OF MATERIALS CHEMISTRY C 10 . 17 (2022) : 6794-6804 . |
| APA | Xiong, Fangzhu , Sun, Jie , Cole, Matthew T. , Guo, Weiling , Yan, Chunli , Dong, Yibo et al. GaN LEDs with in situ synthesized transparent graphene heat-spreading electrodes fabricated by PECVD and penetration etching . | JOURNAL OF MATERIALS CHEMISTRY C , 2022 , 10 (17) , 6794-6804 . |
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Abstract ：
In order to further improve the luminous efficiency of GaN-based light-emitting diodes (LEDs), a novel electrode structure with an interdigitated electrode and electrode holes etched under the P/ N electrode is designed and fabricated, with the improvement of the electrode structure as the research point. In this structure, the metal electrodes are in direct contact with the ITO and the N-GaN layers at the P/N electrode holes respectively, so as to improve the current spreading capacity and luminous efficiency of the device. In order to obtain better current blocking layer (CBL) structure, electrode hole size and electrode hole spacing, seven different devices are designed, and their photoelectric properties are tested. The test results show that under the working current of 150 mA, the discontinuous CBL structure cannot effectively improve the luminescence performance of LEDs. The size of the P electrode hole has little effect on the properties of the device. When the spacing of the P electrode hole increases from 20 mu m to 30 mu m, the external quantum efficiency (EQE) and wall-plug efficiency (WPE) increase by about 5. 0% and 3. 8%, respectively. When the size of the N electrode hole reduces from 17 mu mx5 mu m to 10 mu mx5 mu m, the EQE and WPE increase by about 6. 5% and 3. 0%, respectively. When the spacing of the N electrode hole reduces from 45 mu m to 40 mu m, the luminescence performance of the device is not effectively improved.
Keyword ：
GaN-based light-emitting diodes GaN-based light-emitting diodes optical devices optical devices photoelectric properties photoelectric properties thermal reliability thermal reliability
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| GB/T 7714 | Fang Aoqi , Guo Weiling , Xu Hao et al. Power Light-Emitting Diode with Novel Electrode Structure [J]. | ACTA OPTICA SINICA , 2022 , 42 (19) . |
| MLA | Fang Aoqi et al. "Power Light-Emitting Diode with Novel Electrode Structure" . | ACTA OPTICA SINICA 42 . 19 (2022) . |
| APA | Fang Aoqi , Guo Weiling , Xu Hao , Deng Jie , Chen Jiaxin , Sun Jie . Power Light-Emitting Diode with Novel Electrode Structure . | ACTA OPTICA SINICA , 2022 , 42 (19) . |
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Abstract ：
In this paper, in order to explore the influence of indium tin oxide (ITO) size and mesa shape on the performance of GaN-based micro light emitting diodes (Micro LEDs) on sapphire substrates, Micro LEDs of different sizes with ITO area smaller than or equal to the light-emitting area were designed and fabricated. The experiment results show that when the ITO area of the Micro LED is equal to the area of the light-emitting area, its optoelectronic performance is significantly better than that of the Micro LEDs whose ITO area is smaller than the area of the light-emitting area. When the light-emitting area size is 40 mu m, the wall-plug efficiency (WPE) of the two structures of Micro LEDs can differ by more than 50%. Based on above experiment results, this paper designed and fabricated Micro LEDs with different sizes of square and circular mesa with the same ITO area as the light-emitting area. The experimental results show that the WPE of the circular mesa Micro LED is slightly higher than that of the square mesa Micro LED at low current density. However, as the current density and chip size increase, the performance of the Micro LED with a square mesa is better.
Keyword ：
ITO ITO wall-plug efficiency wall-plug efficiency micro-electronics devices micro-electronics devices Micro LED Micro LED GaN GaN
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| GB/T 7714 | Fang, Aoqi , Xu, Hao , Guo, Weiling et al. Investigation of the Effect of ITO Size and Mesa Shape on the Optoelectronic Properties of GaN-Based Micro LEDs [J]. | CRYSTALS , 2022 , 12 (11) . |
| MLA | Fang, Aoqi et al. "Investigation of the Effect of ITO Size and Mesa Shape on the Optoelectronic Properties of GaN-Based Micro LEDs" . | CRYSTALS 12 . 11 (2022) . |
| APA | Fang, Aoqi , Xu, Hao , Guo, Weiling , Liu, Jixin , Chen, Jiaxin , Li, Mengmei . Investigation of the Effect of ITO Size and Mesa Shape on the Optoelectronic Properties of GaN-Based Micro LEDs . | CRYSTALS , 2022 , 12 (11) . |
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