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学者姓名：安彤
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Abstract ：
For high-power modules with wire bonding as the interconnection method, fatigue damage and cracking at the bond interface are important forms of module failure. However, the currently used numerical models of the bond interface neglect the influence of microdefects and damage evolution of the interface material and cannot accurately describe the degradation process of the mechanical properties of the bond interface. In this work, the shear strength of the Al-bonded wire-Al metallization layer bond interface of an insulated-gate bipolar transistor (IGBT) module after different numbers of power cycles was measured via shear tests, and force-displacement (F- $\delta $ ) curves and fracture surface morphologies were obtained. The experimental results indicate that the bond interface strength decreases significantly as the number of power cycles increases. To describe this phenomenon, the cohesive zone model-based finite discrete element method (CZM-based FDEM) is introduced in the bonding zone; that is, the bonding zone is discretized via triangular elements, and cohesive elements are inserted between adjacent triangular elements to describe the cracking process of the bond interface. By randomly assigning different material property parameters to the cohesive elements, the microdefects can be characterized, and by adjusting the proportions of cohesive elements with different strengths, the phenomenon whereby the bond interface strength decreases during power cycling can be better demonstrated. Finally, a comparison with the results of shear tests validated that this method can effectively predict fracture processes at the bond interface and is able to describe the degradation of the interfacial mechanical properties observed in the experiments.
Keyword ：
cohesive zone modeling cohesive zone modeling bond interface degradation bond interface degradation Morphology Morphology Surface morphology Surface morphology Shearing Shearing Bonding Bonding Junctions Junctions Wire Wire Substrates Substrates Temperature measurement Temperature measurement shear test shear test Al bonded wire-Al metallization layer bond interface Al bonded wire-Al metallization layer bond interface Insulated gate bipolar transistors Insulated gate bipolar transistors Finite element analysis Finite element analysis IGBT module IGBT module microdefect microdefect
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| GB/T 7714 | Zhao, Shengjun , Wang, Qi , An, Tong et al. Study on a Simulation Method for IGBT Bonded Wire Cracking Under Power Cycling Conditions Considering the Effect of Damage Evolution [J]. | IEEE ACCESS , 2024 , 12 : 196105-196117 . |
| MLA | Zhao, Shengjun et al. "Study on a Simulation Method for IGBT Bonded Wire Cracking Under Power Cycling Conditions Considering the Effect of Damage Evolution" . | IEEE ACCESS 12 (2024) : 196105-196117 . |
| APA | Zhao, Shengjun , Wang, Qi , An, Tong , Qin, Fei . Study on a Simulation Method for IGBT Bonded Wire Cracking Under Power Cycling Conditions Considering the Effect of Damage Evolution . | IEEE ACCESS , 2024 , 12 , 196105-196117 . |
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Abstract ：
This paper presents an experimental investigation and a finite element (FE) analysis study on the thermal and mechanical behaviors of insulated-gate bipolar transistor (IGBT) power modules under various operating conditions. The power cycling test conditions are provided by two test benches, a direct current (DC) test bench and a pulse width modulation (PWM) test bench. Infrared (IR) camera acquisition methods are suggested as an approach for transient temperature measurements to estimate the effects of operating conditions and switching frequency on the thermal performance of an IGBT module. An electrical–thermal–mechanical FE model of an IGBT module is employed to determine the stress in the interconnections of an IGBT module induced by junction temperature fluctuations. Results indicate that the operating conditions significantly impact the maximum junction temperature, the junction temperature increase rate, and the junction temperature distribution of an IGBT chip and the thermally induced stress in the interconnections. The switching frequency strongly impacts the junction temperature of an IGBT chip, and the maximum junction temperature increases when the switching frequency increases due to the increasing switching loss. Furthermore, the junction temperature variation induced by the instantaneous switching loss is estimated by the proposed IR camera measurement method. © 2022, The Author(s) under exclusive licence to The Korean Institute of Power Electronics.
Keyword ：
Power cycling test Power cycling test Junction temperature Junction temperature Infrared (IR) camera measurement Infrared (IR) camera measurement IGBT module IGBT module
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| GB/T 7714 | An, T. , Tian, Y. , Qin, F. et al. Comparison of junction temperature variations of IGBT modules under DC and PWM power cycling test conditions [J]. | Journal of Power Electronics , 2022 , 22 (9) : 1561-1575 . |
| MLA | An, T. et al. "Comparison of junction temperature variations of IGBT modules under DC and PWM power cycling test conditions" . | Journal of Power Electronics 22 . 9 (2022) : 1561-1575 . |
| APA | An, T. , Tian, Y. , Qin, F. , Dai, Y. , Gong, Y. , Chen, P. . Comparison of junction temperature variations of IGBT modules under DC and PWM power cycling test conditions . | Journal of Power Electronics , 2022 , 22 (9) , 1561-1575 . |
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Abstract ：
In this study, a model for predicting the electromigration lifetime of copper pillar bumps in ceramic packaging device was established. In order to determine the relevant parameters in the Black model of electromigration lifetime prediction, three current density levels, 2.5x10(4)A/cm(2), 3x10(4)A/cm(2) and 3.5x10(4)A/cm(2), were selected to conduct the electromigration tests on the Cu pillar bump in ceramic package samples at ambient temperatures of 125 degrees C and 160 degrees C respectively. SEM was used to observe the failure mode of bumps under different temperature and current density. The experiment of on-line monitoring of the bump resistance was used to monitor the resistance information in real time, and then obtain the electromigration lifetime of the copper pillar bumps under each load condition. By determining the current influence index n and the failure activation energy Q, this paper defines the black model of the electromigration lifetime prediction of the copper pillar bumps in the ceramic package.
Keyword ：
Copper pillar bumps Copper pillar bumps Black model Black model electromigration electromigration
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| GB/T 7714 | Chen, Fangzhou , Chen, Si , Fu, Zhiwei et al. Prediction of electromigration lifetime of copper pillar bumps in ceramic packaging device [C] . 2020 . |
| MLA | Chen, Fangzhou et al. "Prediction of electromigration lifetime of copper pillar bumps in ceramic packaging device" . (2020) . |
| APA | Chen, Fangzhou , Chen, Si , Fu, Zhiwei , Huang, Yun , Qin, Fei , An, Tong . Prediction of electromigration lifetime of copper pillar bumps in ceramic packaging device . (2020) . |
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Abstract ：
As through-silicon vias (TSVs) are key structural elements of 3D integration and packaging, creep deformation, which causes TSV-Cu protrusion, is critical for TSV reliability. Here, the effect of the diffusion creep behavior on the TSV-Cu protrusion morphology is analyzed using experiment and simulation. The protrusion morphology of TSV-Cu after annealing treatment is examined using a white light interferometer. The diffusion creep mechanism of TSV-Cu is determined by observation of the TSV-Cu microstructure using a scanning electron microscopy and a focused ion beams. The TSV-Cu grain size is measured using an electron backscatter diffraction system. The diffusion creep rate model of TSV-Cu is deduced based on the energy balance theory and is introduced into the finite element model to clarify the influence of diffusion creep on TSV-Cu protrusion. It is determined that the diffusion creep of TSV-Cu is mainly caused by grain boundary diffusion and grain boundary sliding. The diffusion creep strain rate is positively correlated with the ambient temperature and the external load but negatively correlated with the grain size. The amount of TSV-Cu protrusion increases with decreasing grain size. The simulation results show that the "donut"-shaped protrusion morphology is more likely to occur in TSV-Cu with smaller grain sizes near the sidewall region of the via.
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| GB/T 7714 | An, Tong , Qin, Fei , Chen, Si et al. The effect of the diffusion creep behavior on the TSV-Cu protrusion morphology during annealing [J]. | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , 2018 , 29 (19) : 16305-16316 . |
| MLA | An, Tong et al. "The effect of the diffusion creep behavior on the TSV-Cu protrusion morphology during annealing" . | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 29 . 19 (2018) : 16305-16316 . |
| APA | An, Tong , Qin, Fei , Chen, Si , Chen, Pei . The effect of the diffusion creep behavior on the TSV-Cu protrusion morphology during annealing . | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , 2018 , 29 (19) , 16305-16316 . |
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Abstract ：
In this paper, the tin-lead (Sn-37wt%Pb) eutectic solder joints of plastic ball grid array (PBGA) assemblies are tested using temperature cycling, random vibrations, and combined temperature cycling and vibration loading conditions. The fatigue lives, failure modes for the solder joints and the typical locations of the failed solder joints for single-variable loading and combined loading conditions are compared and analyzed. The results show much earlier solder joint failure for combined loading than that for either temperature cycling or pure vibration loading at room temperature. The primary failure mode is cracking within the bulk solder under temperature cycling, whereas the crack propagation path is along the intermetallic compound (IMC) layer for vibration loading. The solder joints subjected to combined loading exhibit both types of failure modes observed for temperature cycling and vibration loading; in addition, cracking through the IMC and the bulk solder is observed in the combined test. For temperature cycling and vibration loading, the components in the central region of the printed circuit board (PCB) have more failed solder joints than other components, whereas for combined loading, the number of failed solder joints in the components in different locations of the PCB is approximately the same.
Keyword ：
Random vibration Random vibration Combined loading Combined loading Plastic ball grid array (PBGA) Plastic ball grid array (PBGA) Temperature cycling Temperature cycling Fatigue life Fatigue life Solder joint Solder joint Failure mode Failure mode
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| GB/T 7714 | An, Tong , Fang, Chao , Qin, Fei et al. Failure study of Sn37Pb PBGA solder joints using temperature cycling, random vibration and combined temperature cycling and random vibration tests [J]. | MICROELECTRONICS RELIABILITY , 2018 , 91 : 213-226 . |
| MLA | An, Tong et al. "Failure study of Sn37Pb PBGA solder joints using temperature cycling, random vibration and combined temperature cycling and random vibration tests" . | MICROELECTRONICS RELIABILITY 91 (2018) : 213-226 . |
| APA | An, Tong , Fang, Chao , Qin, Fei , Li, Huaicheng , Tang, Tao , Chen, Pei . Failure study of Sn37Pb PBGA solder joints using temperature cycling, random vibration and combined temperature cycling and random vibration tests . | MICROELECTRONICS RELIABILITY , 2018 , 91 , 213-226 . |
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Abstract ：
A new IGBT finite element model considering conducting channel is established. The mechanism in the degradation process of metallization is still uncertain. Thermal stress is considered to be an important factor. Temperature and stress field were obtained by the new model. SEM analysis of degradation metallization surface under DC power cycling test are obtained, and compare with the stress distribution of the simulation.
Keyword ：
IGBT module IGBT module
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| GB/T 7714 | Yuan Xuequan , An Tong , Qin Fei et al. Mechanisms of power module metallization degradation under ageing [C] . 2018 : 1322-1325 . |
| MLA | Yuan Xuequan et al. "Mechanisms of power module metallization degradation under ageing" . (2018) : 1322-1325 . |
| APA | Yuan Xuequan , An Tong , Qin Fei , Zhao Jingyi , Fang Chao . Mechanisms of power module metallization degradation under ageing . (2018) : 1322-1325 . |
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Abstract ：
Insulated gate bipolar transistor has high on-state current and power loss when it operates. The temperature produced by Joule heating causes a great influence on IGBT's reliability, and it even leads the IGBT module to failure. In this article, a DC power-cycle experimental platform is built up, and a infrared thermal imager is used for measuring the temperature distribution of the IGBT module at different switching frequencies. The external trigger shooting function can make the infrared detecting camera photographed simultaneously at the moment of the heating current turned off, so that the highest temperature of the chip can be exact measured. The electro-thermal-mechanical coupling finite element analysis at different switching frequencies was performed by using ABAQUS software. The results of electro-thermal analysis are in accordance with the measure data, and thermal-mechanical analysis gives the stress spread of the whole module at different switching frequencies. The results of experimental and simulation show that with the increase of switching frequency, the junction temperature difference of the IGBT chip decreases and the maximum stress diminishes.
Keyword ：
DC power cycling experiment DC power cycling experiment switching frequency switching frequency IGBT module IGBT module temperature temperature stress stress
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| GB/T 7714 | Fang Chao , An Tong , Qin Fei et al. Temperature and stress distribution of IGBT module in DC power cycling test with different switching frequencies [C] . 2018 : 785-790 . |
| MLA | Fang Chao et al. "Temperature and stress distribution of IGBT module in DC power cycling test with different switching frequencies" . (2018) : 785-790 . |
| APA | Fang Chao , An Tong , Qin Fei , Zhao Jingyi , Yuan Xuequan . Temperature and stress distribution of IGBT module in DC power cycling test with different switching frequencies . (2018) : 785-790 . |
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Abstract ：
Insulated gate bipolar transistor (IGBT) operates at high current, high power and repeated shock current conditions. Joule heating induced during high current conditions, subsequently raising the temperature of the IGBT module. In this paper, we carried out the DC power cycling test with the 200 A current condition. The temperature distribution and the temperature change process of the whole IGBT module are recorded by using a high-speed infrared detecting camera. The finite element model of IGBT module is established by using finite element analysis software ABAQUS. By simulating DC power cycling test, the temperature distribution of IGBT module under different current loads is analyzed, the temperature change process of the whole IGBT module is studied, and the maximum temperature location of the IGBT module is determined. Comparing with the experimental data obtained under the same conditions, the simulation results are in good agreement with the experimental data, which verifies the finite element model.
Keyword ：
The finite element analysis The finite element analysis IGBT module IGBT module Temperature distribution Temperature distribution Infrared detecting camera Infrared detecting camera
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| GB/T 7714 | Fang Chao , An Tong , Qin Fei et al. Study on temperature distribution of IGBT module [C] . 2017 : 1314-1318 . |
| MLA | Fang Chao et al. "Study on temperature distribution of IGBT module" . (2017) : 1314-1318 . |
| APA | Fang Chao , An Tong , Qin Fei , Bie Xiaorui , Zhao Jingyi . Study on temperature distribution of IGBT module . (2017) : 1314-1318 . |
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Abstract ：
Through-silicon vias (TSVs) have become an important technology for three-dimensional integrated circuit (3D IC) packaging. Protrusion of electroplated Cu-filled vias is a critical reliability issue for TSV technology. In this work, thermal cycling tests were carried out to identify how the microstructure affects protrusion during thermal cycling. Cu protrusion occurs when the loading temperature is higher than 149A degrees C. During the first five thermal cycles, the grain size of Cu plays a dominant role in the protrusion behavior. Larger Cu grain size before thermal cycling results in greater Cu protrusion. With increasing thermal cycle number, the effect of the Cu grain size reduces and the microstrain begins to dominate the Cu protrusion behavior. Higher magnitude of microstrain within Cu results in greater protrusion increment during subsequent thermal cycles. When the thermal cycle number reaches 25, the protrusion rate of Cu slows down due to strain hardening. After 30 thermal cycles, the Cu protrusion stabilizes within the range of 1.92 mu m to 2.09 mu m.
Keyword ：
thermal cycling test thermal cycling test electroplated copper electroplated copper microstructure microstructure protrusion protrusion Through-silicon vias Through-silicon vias
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| GB/T 7714 | Chen, Si , An, Tong , Qin, Fei et al. Microstructure Evolution and Protrusion of Electroplated Cu-Filled Through-Silicon Vias Subjected to Thermal Cyclic Loading [J]. | JOURNAL OF ELECTRONIC MATERIALS , 2017 , 46 (10) : 5916-5932 . |
| MLA | Chen, Si et al. "Microstructure Evolution and Protrusion of Electroplated Cu-Filled Through-Silicon Vias Subjected to Thermal Cyclic Loading" . | JOURNAL OF ELECTRONIC MATERIALS 46 . 10 (2017) : 5916-5932 . |
| APA | Chen, Si , An, Tong , Qin, Fei , Chen, Pei . Microstructure Evolution and Protrusion of Electroplated Cu-Filled Through-Silicon Vias Subjected to Thermal Cyclic Loading . | JOURNAL OF ELECTRONIC MATERIALS , 2017 , 46 (10) , 5916-5932 . |
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Abstract ：
Through-Silicon-Via (TSV) is considered to be the most potential solution for 3D electronic packaging, and the mechanical properties of TSV-Cu are critical for TSV reliability improving. In this paper, to make deeply understand the creep behavior of TSV-Cu, nanoindentation creep tests were conducted to obtain its creep parameters. At first, the TSV specimens were fabricated by means of a typical TSV manufacturing process. Then a combination programmable procedure of the constant indentation strain rate method and the constant load method was employed to study the creep behavior of TSV-Cu. To understand the influence of the previous loading schemes, including the different values of the indentation strain and the maximum depths, the nanoindentation creep tests under different loading conditions were conducted. The values of creep strain rate sensitivity m were derived from the corresponding displacement-holding time curves, and the mean value of m finally determined was 0.0149. The value of m is considered no obvious correlation with the different indentation strain rates and the maximum depths by this method. Furthermore, the mechanism for the room temperature creep was also discussed, and the grain boundaries might play an significant role in this creep behavior.
Keyword ：
Through-Silicon-Via Through-Silicon-Via TSV-Cu TSV-Cu Nanoindentation Nanoindentation Mechanical properties Mechanical properties
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| GB/T 7714 | Wu, W. , Qin, F. , An, T. et al. A STUDY OF CREEP BEHAVIOR OF TSV-CU BASED ON NANOINDENTAION CREEP TEST [J]. | JOURNAL OF MECHANICS , 2016 , 32 (6) : 717-724 . |
| MLA | Wu, W. et al. "A STUDY OF CREEP BEHAVIOR OF TSV-CU BASED ON NANOINDENTAION CREEP TEST" . | JOURNAL OF MECHANICS 32 . 6 (2016) : 717-724 . |
| APA | Wu, W. , Qin, F. , An, T. , Chen, P. . A STUDY OF CREEP BEHAVIOR OF TSV-CU BASED ON NANOINDENTAION CREEP TEST . | JOURNAL OF MECHANICS , 2016 , 32 (6) , 717-724 . |
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