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学者姓名：冯士维
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Abstract ：
In this article, a trap characterization system based on the transient drain voltage was constructed to achieve the complete measurement and analysis of traps in GaN high-electron-mobility transistors (HEMTs). Through the appropriate design of the measurement circuit and acquisition system, the transient drain voltage variations caused by trapping behaviors in the GaN HEMTs can be obtained. A time constant extraction method based on the Bayesian deconvolution function was used to optimize the trap extraction accuracy, and the trap properties, including time constant, absolute amplitudes, and energy levels, can be comprehensively characterized. In combination with the above trap features, the response of trapping behaviors to various bias voltages was obtained to analyze the trap positions. With respect to the GaN HEMTs with different processes and fabrications, extensive measurements of energy levels were performed on four kinds of samples to confirm the validity of the proposed characterization system, and four devices of each kind were used to verify the repeatability of experimental results. It indicated that the constructed instrument and measurement methods can realize the accurate and nondestructive characterization of traps. The method used in this study can be potentially beneficial to better understand the reliability issues and optimize the performance of devices.
Keyword ：
GaN high-electron-mobility transistors (HEMTs) GaN high-electron-mobility transistors (HEMTs) Energy level Energy level trapping effect trapping effect reliability reliability transient drain voltage transient drain voltage
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| GB/T 7714 | Pan, Shijie , Feng, Shiwei , Li, Xuan et al. A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage [J]. | IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT , 2024 , 73 . |
| MLA | Pan, Shijie et al. "A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage" . | IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT 73 (2024) . |
| APA | Pan, Shijie , Feng, Shiwei , Li, Xuan , Bai, Kun , Lu, Xiaozhuang , Zheng, Xiang et al. A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage . | IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT , 2024 , 73 . |
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Abstract ：
An automatic in -situ technique for thermal resistance measurement based on an electrical method is proposed in this paper. In contrast to the conventional thermal resistance measurement circuits of the electrical method, this method involves direct measurement of the thermal resistance of GaN high-electron-mobility transistor (HEMT) devices in an operating circuit by introducing a well-matched radio-frequency switching circuit into the operating circuit. The advantage of this method is that the thermal resistance can be measured periodically on the insitu device without changing the electrical characteristics of the device. Based on this result, the cooling curve of the HEMT device in the power amplifier (PA) circuit is collected and the thermal resistance characteristics of the HEMT are determined via the structure function method. The purpose of this paper is to successfully obtain the thermal resistance of in -situ devices through an automatic in -situ measurement circuit of thermal resistance, and to verify the feasibility of periodic detection of thermal resistance of in -situ devices.
Keyword ：
In -situ measurement In -situ measurement GaN HEMT GaN HEMT RF switching RF switching Thermal resistance Thermal resistance S-parameters S-parameters
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| GB/T 7714 | Yao, Zhanwu , Feng, Shiwei , Li, Xuan et al. Automatic in-situ measurement of thermal resistance for GaN HEMTs [J]. | MICROELECTRONICS JOURNAL , 2024 , 149 . |
| MLA | Yao, Zhanwu et al. "Automatic in-situ measurement of thermal resistance for GaN HEMTs" . | MICROELECTRONICS JOURNAL 149 (2024) . |
| APA | Yao, Zhanwu , Feng, Shiwei , Li, Xuan , Bai, Kun , Lu, Xiaozhuang , You, Binyu et al. Automatic in-situ measurement of thermal resistance for GaN HEMTs . | MICROELECTRONICS JOURNAL , 2024 , 149 . |
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Abstract ：
Press-pack insulated gate bipolar transistor (IGBT) is widely used in transmission systems due to its high reliability and short-circuit failure modes. However, there is a lack of research on the failure mechanism of elastic press-pack IGBT. For the elastic press-pack IGBT sub-module, based on the principle of electrical measurement, this paper designs a power cycling test system for power cycling test and thermal resistance measurement. Based on the structure function method, the changes of electrical properties and thermal resistance after power cycling are studied. The reliability and failure mechanism of the elastic crimp IGBT sub-module are analyzed, and the conclusion that the gate oxide layer damage is the main failure principle is obtained. The work of this paper fills the gap in the practical application of elastic press-pack IGBT.
Keyword ：
reliability reliability system installation system installation failure analysis failure analysis Power cycling Power cycling press-pack IGBT press-pack IGBT
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| GB/T 7714 | Zhang, Boyang , Feng, Shiwei , He, Xin et al. Power Cycling and Research on Failure Mechanism of Press-Pack IGBT based on Thermal Resistance Composition Testing [J]. | 2024 4TH INTERNATIONAL CONFERENCE ON ELECTRONIC MATERIALS AND INFORMATION ENGINEERING, EMIE 2024 , 2024 : 15-18 . |
| MLA | Zhang, Boyang et al. "Power Cycling and Research on Failure Mechanism of Press-Pack IGBT based on Thermal Resistance Composition Testing" . | 2024 4TH INTERNATIONAL CONFERENCE ON ELECTRONIC MATERIALS AND INFORMATION ENGINEERING, EMIE 2024 (2024) : 15-18 . |
| APA | Zhang, Boyang , Feng, Shiwei , He, Xin , Bai, Kun , Lu, Xiaozhuang , Zhou, Yinqi . Power Cycling and Research on Failure Mechanism of Press-Pack IGBT based on Thermal Resistance Composition Testing . | 2024 4TH INTERNATIONAL CONFERENCE ON ELECTRONIC MATERIALS AND INFORMATION ENGINEERING, EMIE 2024 , 2024 , 15-18 . |
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Abstract ：
In this study, the effects of 1 MeV electron radiation on the D-mode GaN-based high electron mobility transistors (HEMTs) were investigated after different radiation doses. The changes in electrical properties of the device were obtained, and the related physical mechanisms were analyzed. It indicated that under the radiation dose of 5 x 1014 cm-2, the channel current cannot be completely pinched off even if the negative gate voltage was lower than the threshold voltage, and the gate leakage current increased significantly. The emission microscopy and scanning electron microscopy were used to determine the damage location. Besides, the radiation dose was adjusted ranging from 5 x 1012 to 1 x 1014 cm-2, and we noticed that the drain-source current increased and the threshold voltage presented slightly negative shift. By calculations, it suggested that the carrier density and electron mobility gradually increased. It provided a reference for the development of device radiation reinforcement technology.
Keyword ：
AlGaN/GaN HEMT AlGaN/GaN HEMT electron radiation electron radiation device damage device damage performance degradation performance degradation
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| GB/T 7714 | Pan, Shijie , Feng, Shiwei , Li, Xuan et al. Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors [J]. | JOURNAL OF SEMICONDUCTORS , 2024 , 45 (9) . |
| MLA | Pan, Shijie et al. "Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors" . | JOURNAL OF SEMICONDUCTORS 45 . 9 (2024) . |
| APA | Pan, Shijie , Feng, Shiwei , Li, Xuan , Feng, Zixuan , Lu, Xiaozhuang , Bai, Kun et al. Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors . | JOURNAL OF SEMICONDUCTORS , 2024 , 45 (9) . |
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Abstract ：
The critical temperatures of semiconductor laser facet coating layers were studied via measurements from three prongs on the surface (coating exterior boundary), on the facet (coating interior boundary) and along the inner cavity, with temperatures measured via infrared imaging, thermoreflectance and forward-voltage methods, respectively. We subdivided the facet microstructure temperatures and demonstrated the feasibility of facet temperature measurement via thermoreflectance for the reflected light carrying the temperature information mainly comes from the coating interior boundary. Facet reflectivity transients of an AlGaInAs/AlGaAs laser diode are traced using an optical setup featuring fiber transmission and fiber detection. The highest temperature along the z-axis was measured at the facet, with a temperature rise exceeding two times that at the surface, which confirmed the significance of the subdivision, and approaching four times that in the inner cavity. Thermal transient analysis from optical and electrical methods presents similar results; steady temperature measurements as a function of injection current indicate light absorption's contribution to facet heating.
Keyword ：
Thermal characteristic analysis Thermal characteristic analysis Highest temperature determination Highest temperature determination Facet coating layers Facet coating layers Nondestructive measurement Nondestructive measurement Thermoreflectance technology Thermoreflectance technology Fiber detection Fiber detection
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| GB/T 7714 | Ni, Yijia , Feng, Shiwei , Lu, Xiaozhuang et al. Research on temperatures located within facet coating layers along z-axis of semiconductor lasers [J]. | OPTICS AND LASER TECHNOLOGY , 2022 , 153 . |
| MLA | Ni, Yijia et al. "Research on temperatures located within facet coating layers along z-axis of semiconductor lasers" . | OPTICS AND LASER TECHNOLOGY 153 (2022) . |
| APA | Ni, Yijia , Feng, Shiwei , Lu, Xiaozhuang , Bai, Kun , Zhang, Yamin , Pan, Shijie et al. Research on temperatures located within facet coating layers along z-axis of semiconductor lasers . | OPTICS AND LASER TECHNOLOGY , 2022 , 153 . |
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Abstract ：
The interfacial thermal resistance between two solid materials is usually obvious in thermal management technology, but there is still no way to eliminate it nor uniform measurement standard. When taking thermal measurements because the surface roughness of instrument probe and device package directly affects the interface morphology, the change of total thermal resistance caused by the thermal contact resistance (TCR) fluctuations disturbs the accuracy of internal thermal analysis of device. We prepared samples with different surface roughness and performed thermal measurements on them, compared with test under vacuum environment and the condition filled with thermal interface materials, respectively. We found the heat-transfer mechanism of interface. More importantly, it is shown that in the interval of surface roughness Ra < 6.4, the TCR shows good consistency when filled with thermal interface materials. This result will help to improve the convenience of measurement for the accuracy of thermal measurement technology.
Keyword ：
surface roughness surface roughness Thermal contact resistance Thermal contact resistance solid-solid interface solid-solid interface microelectronic device microelectronic device thermal management thermal management
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| GB/T 7714 | Chen, Yu-Zheng , Feng, Shi-Wei , Zhang, Ya-Min et al. Effect of interface morphology on thermal contact resistance in thermal management of electronic devices [J]. | INTERNATIONAL JOURNAL OF MODERN PHYSICS B , 2022 , 36 (17) . |
| MLA | Chen, Yu-Zheng et al. "Effect of interface morphology on thermal contact resistance in thermal management of electronic devices" . | INTERNATIONAL JOURNAL OF MODERN PHYSICS B 36 . 17 (2022) . |
| APA | Chen, Yu-Zheng , Feng, Shi-Wei , Zhang, Ya-Min , He, Xin , Bai, Kun , Li, Xuan . Effect of interface morphology on thermal contact resistance in thermal management of electronic devices . | INTERNATIONAL JOURNAL OF MODERN PHYSICS B , 2022 , 36 (17) . |
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Abstract ：
In this work, the current transient method was conducted for trap analysis in the p-GaN gate high-electron-mobility transistors (HEMTs) in the OFF-state. Based on the traditional detrapping transient measurements, the pure recovery transients can be isolated by subtracting the undetected part caused by the measurement conditions. A comparison of the measured and actual recovery transients under different drain filling voltages was presented. It suggested that this method can be effective to analyze the unregular transient curves and distinguish the charge trapping type preliminarily. In addition, three traps were identified based on the time constant spectra and the hidden absolute amplitudes of traps can be corrected using the differential amplitude spectra. The information of trap levels in the buffer layer and AlGaN barrier layer was revealed, consisting of three electron traps with energy levels of 0.313, 0.265, and 0.467 eV. The identification of the traps may provide a physical foundation for better understanding of the drain-induced trapping effect during the OFF-state in p-GaN HEMTs.
Keyword ：
trapping effect trapping effect Electron traps Electron traps reliability reliability Current transient method Current transient method normally-OFF normally-OFF Behavioral sciences Behavioral sciences HEMTs HEMTs Logic gates Logic gates p-GaN gate high-electron-mobility transistors (HEMTs) p-GaN gate high-electron-mobility transistors (HEMTs) Market research Market research MODFETs MODFETs Transient analysis Transient analysis
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| GB/T 7714 | Pan, Shijie , Feng, Shiwei , Li, Xuan et al. Identification of Traps in p-GaN Gate HEMTs During OFF-State Stress by Current Transient Method [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2022 , 69 (9) : 4877-4882 . |
| MLA | Pan, Shijie et al. "Identification of Traps in p-GaN Gate HEMTs During OFF-State Stress by Current Transient Method" . | IEEE TRANSACTIONS ON ELECTRON DEVICES 69 . 9 (2022) : 4877-4882 . |
| APA | Pan, Shijie , Feng, Shiwei , Li, Xuan , Bai, Kun , Lu, Xiaozhuang , Zhu, Jiayu et al. Identification of Traps in p-GaN Gate HEMTs During OFF-State Stress by Current Transient Method . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2022 , 69 (9) , 4877-4882 . |
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Abstract ：
This paper presents a detailed investigation of trapping effect in AlGaN/GaN high-electron-mobility transistors based on the pulsed current-voltage characterization, drain voltage transient (DVT) measurement, and capacitance deep-level transient spectroscopy (C-DLTS). By monitoring the DVTs at various filling voltages and temperatures, the properties of three electron traps were obtained with the DVT measurements. Specifically, the energy levels of the former two traps were determined to be 0.28 and 0.48 eV, which was confirmed by the C-DLTS measurement performed on the same device. In addition, a third temperature-independent trap located in the GaN buffer was observed only with the DVT measurement, indicating the advantage of transient curves measurement in characterizing the traps insensitive to temperature. The combined measurements demonstrate the correlation of different techniques, which allows identifying the same trap levels to investigate the physical origin of traps.
Keyword ：
gallium nitride (GaN) gallium nitride (GaN) drain voltage transients (DVTs) drain voltage transients (DVTs) high-electron-mobility transistors (HEMTs) high-electron-mobility transistors (HEMTs) trap trap capacitance deep-level transient spectroscopy (C-DLTS) capacitance deep-level transient spectroscopy (C-DLTS)
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| GB/T 7714 | Pan, Shijie , Feng, Shiwei , Li, Xuan et al. Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy [J]. | SEMICONDUCTOR SCIENCE AND TECHNOLOGY , 2022 , 37 (9) . |
| MLA | Pan, Shijie et al. "Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy" . | SEMICONDUCTOR SCIENCE AND TECHNOLOGY 37 . 9 (2022) . |
| APA | Pan, Shijie , Feng, Shiwei , Li, Xuan , Bai, Kun , Lu, Xiaozhuang , Zhang, Yamin et al. Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy . | SEMICONDUCTOR SCIENCE AND TECHNOLOGY , 2022 , 37 (9) . |
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Abstract ：
In this work, we developed the voltage-transient method to characterize the properties of traps in AlGaN/GaN high-electron-mobility transistors (HEMTs) in the OFF-state. By monitoring the drain voltage transients of the HEMTs at various temperatures, three types of trapping mechanism were identified: 1) buffer charge trapping, which occurred on a timescale of approximately 1 ms; 2) charge trapping in the AlGaN layer at the gate-drain edge with the energy level (E-a) of approximately 0.54 eV; and 3) surface charge trapping with E-a of approximately 0.28 eV. In particular, we extracted accurate amplitudes for the first two trapping behaviors and studied the dependence of the trapping effect on the filling bias conditions. The results showed that the buffer charge trapping was primarily affected by the drain voltage, whereas the charge trapping on the drain side of the gate was affected by both the drain and gate voltages; these results were verified by drift-diffusion simulations. In addition, we observed the third trapping behavior, which was apparent in the measurement window beyond 308 K, thus demonstrating the advantages of our method for correctly and effectively monitoring the changes in the peaks in the time constant spectrum.
Keyword ：
Charge trapping Charge trapping high-electron-mobility transistors (HEMTs) high-electron-mobility transistors (HEMTs) differential amplitude spectrum (DAS) differential amplitude spectrum (DAS) voltage transient voltage transient GaN GaN
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| GB/T 7714 | Pan, Shijie , Feng, Shiwei , Li, Xuan et al. Identifying the Properties of Traps in GaN High-Electron-Mobility Transistors via Amplitude Analysis Based on the Voltage-Transient Method [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2021 , 68 (11) : 5541-5546 . |
| MLA | Pan, Shijie et al. "Identifying the Properties of Traps in GaN High-Electron-Mobility Transistors via Amplitude Analysis Based on the Voltage-Transient Method" . | IEEE TRANSACTIONS ON ELECTRON DEVICES 68 . 11 (2021) : 5541-5546 . |
| APA | Pan, Shijie , Feng, Shiwei , Li, Xuan , Zheng, Xiang , Lu, Xiaozhuang , He, Xin et al. Identifying the Properties of Traps in GaN High-Electron-Mobility Transistors via Amplitude Analysis Based on the Voltage-Transient Method . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2021 , 68 (11) , 5541-5546 . |
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Abstract ：
The temperature and thermal resistance of Ga2O3 Schottky barrier diodes were investigated using electrical methods with temperature-sensitive electrical parameters and the structure function method. The analysis was based on the voltage of the Schottky junction as a temperature-sensitive parameter so as to measure the junction temperature of Ga2O3 Schottky barrier diodes. The junction-case thermal resistance of the Ga2O3 Schottky barrier diodes was accurately extracted by the transient dual interface test method to be 39.04 degrees C W-1, which increased slightly with the increase of power current. In addition, the temperature extracted with the electrical method was compared with the result of infrared measurements, which indicated that the temperature extracted with the infrared was significantly higher than the result of the electrical method. This difference can be explained in that the temperature extracted by the electrical method was the temperature of the active region of the device, whereas the result of infrared presented the maximum temperature of the device. Furthermore, the low thermal conductivity of Ga2O3 resulted in temperature inhomogeneity on the device surface and further increased the temperature difference. This study provides a convenient and non-destructive method for rapid measurement of the thermal characteristics of the Ga2O3 Schottky barrier diodes, and enables rapid evaluation of the whole thermal system.
Keyword ：
thermal resistance thermal resistance Ga2O3 Schottky barrier diode (SBD) Ga2O3 Schottky barrier diode (SBD) temperature measurement temperature measurement temperature-sensitive electrical parameter (TSEP) temperature-sensitive electrical parameter (TSEP)
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| GB/T 7714 | Li, Xuan , Feng, Shiwei , Feng, Zhihong et al. Characterization of thermal-resistance in Ga2O3 Schottky barrier diodes with temperature-sensitive electrical parameters [J]. | SEMICONDUCTOR SCIENCE AND TECHNOLOGY , 2021 , 36 (11) . |
| MLA | Li, Xuan et al. "Characterization of thermal-resistance in Ga2O3 Schottky barrier diodes with temperature-sensitive electrical parameters" . | SEMICONDUCTOR SCIENCE AND TECHNOLOGY 36 . 11 (2021) . |
| APA | Li, Xuan , Feng, Shiwei , Feng, Zhihong , Lv, Yuanjie , Wang, Yuangang , He, Xin et al. Characterization of thermal-resistance in Ga2O3 Schottky barrier diodes with temperature-sensitive electrical parameters . | SEMICONDUCTOR SCIENCE AND TECHNOLOGY , 2021 , 36 (11) . |
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