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学者姓名：季凌飞
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Abstract ：
Objective Lithium niobate crystals with deep microhole structures are excellent photonic-crystal devices with modulation properties of wavelength selection. However, current fabrication methods, such as focused ion beam etching, chemical etching, or conventional laser drilling, remain a considerable challenge for obtaining microholes with high-aspect-ratios in lithium niobate crystals. This paper presents a strategy for the one-step fabrication of uniform deep microhole arrays with a 700???1 aspect ratio within lithium niobate crystals using the ultrafast laser temporal Bessel shaping technique. This efficient and high-quality strategy for fabricating deep microhole arrays has excellent process stability. The prepared lithium niobate microhole array has remarkable selective beam transmittance, and we hope that this strategy can be used as a promising method for fabricating lithium niobate photonic-crystals. Methods In this study, the original femtosecond Gaussian beam was transformed into a zero-order Bessel beam using a series of beam shaping units and the energy distribution of the femtosecond Bessel beam was calculated via COMSOL simulations. The one-step fabrication of deep microholes was realized using the high peak power of the femtosecond laser and by adjusting the spatial energy distribution of the Bessel beam. By matching the pulse frequency and the speed of the moving stage, stable and uniform fabrication of large-area deep microhole arrays could be achieved by varying beam energy and the relative focal position. The resulting microhole morphology and aspect ratio were evaluated using scanning electron microscope, confocal laser scanning microscope, and optical microscope. Additionally, the beam transmission test was performed on the microhole arrays, verifying the structure's excellent selective beam transmission ability. Results and Discussions The femtosecond Bessel beam obtained after beam shaping successfully realized the fabrication of microhole arrays with a 700???1 aspect ratio. Varying the laser power can effectively adjust the morphology and aspect ratio of the fabricated microhole. With an increase in laser power, the diameter and depth of the microhole become larger but the aspect ratio gradually decreases. At the same time, an increase in laser power can lead to a side lobe etching effect on the sample surface, resulting in degradation of the device performance or even its damage. Variation in the relative focal position slightly changes the microhole diameter but considerably affects the depth of the microhole. Furthermore, maximum utilization of the Bessel beam energy can be achieved when the Bessel beam is focused at the center of the sample, and a complete through-hole of a 500 mu m thick lithium niobate crystal is realized. This high-aspect-ratio microhole array demonstrates excellent selective transmission of light beams in the 450510 nm range. Conclusions In this study, a femtosecond Bessel beam is successfully used to rapidly produce a uniform array of microholes with an aspect ratio of 700???1 inside a lithium niobate crystal. The effects of laser output power and relative focal position on the microhole's morphology, depth, and aspect ratio are systematically studied and summarized. The laser power range for inhibiting the side lobe etching effect and the design principles of the microhole array are presented. The high-aspect-ratio lithium niobate photonic-crystal filter is fabricated based on the optimization of the processing parameters, and the wavelength-selective transmission of the structure for beams in the range of 450510 nm is demonstrated through the transmission spectrum measurements. The efficient and reliable processing of high-aspect-ratio microhole structures provides a new pathway that is worth exploring for the fabrication of lithium-niobate-based photonic-crystal devices.
Keyword ：
laser technique laser technique aspect ratio aspect ratio ultrafast lasers ultrafast lasers lithium niobate lithium niobate Bessel beam Bessel beam photonic-crystal photonic-crystal
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| GB/T 7714 | Sun Weigao , Ji Lingfei , Zheng Jincan et al. High-Aspect-Ratio Photonic-Crystal Structure of Lithium Niobate Fabricated via Femtosecond Bessel Beam Direct Writing [J]. | CHINESE JOURNAL OF LASERS-ZHONGGUO JIGUANG , 2022 , 49 (10) . |
| MLA | Sun Weigao et al. "High-Aspect-Ratio Photonic-Crystal Structure of Lithium Niobate Fabricated via Femtosecond Bessel Beam Direct Writing" . | CHINESE JOURNAL OF LASERS-ZHONGGUO JIGUANG 49 . 10 (2022) . |
| APA | Sun Weigao , Ji Lingfei , Zheng Jincan , Wen Yanan , Wang Guanqiang . High-Aspect-Ratio Photonic-Crystal Structure of Lithium Niobate Fabricated via Femtosecond Bessel Beam Direct Writing . | CHINESE JOURNAL OF LASERS-ZHONGGUO JIGUANG , 2022 , 49 (10) . |
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Abstract ：
<正>激光制造技术，是一种基于激光与物质相互作用的先进制造手段，具有低成本、高精度、高自由度等特点。通过调控加工模式和参数，激光加工可以实现二维或三维跨尺度微纳结构的控型制造或功能材料的控性制备，突破了传统制造方法在空间和时间上的局限性。近年来，激光制造技术逐渐向“设计-制造-器件”一体化方向发展，在物联网、人工智能、医疗器械、航空航天、生物制造等多个前沿科学领域展现出新的应用前景。本专题主要从方法和应用两个方面介绍激光制造技术的现状与发展趋势。
Keyword ：
激光制造技术 激光制造技术 飞秒激光 飞秒激光 微纳制造 微纳制造
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| GB/T 7714 | 徐凯臣 , 季凌飞 , 吴志刚 . 激光制造技术与新应用专题导读 [J]. | 光电工程 , 2022 , 49 (02) : 5-6 . |
| MLA | 徐凯臣 et al. "激光制造技术与新应用专题导读" . | 光电工程 49 . 02 (2022) : 5-6 . |
| APA | 徐凯臣 , 季凌飞 , 吴志刚 . 激光制造技术与新应用专题导读 . | 光电工程 , 2022 , 49 (02) , 5-6 . |
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Abstract ：
采用脉宽为10 ps、频率为200 kHz、波长为1064 nm的皮秒激光在硅表面扫描会自成形微孔结构，通过改变脉冲能量密度、扫描速度和扫描次数，实验研究了微孔的演变规律。结果表明：不同参数对微孔的影响可以归纳为脉冲能量密度和单位面积内有效脉冲数。随着脉冲能量密度的增加，微孔逐渐向沟槽两侧移动，由初始的随机排列演变成一维线性均匀排列；随着单位面积内有效脉冲数的增加，边缘两侧微孔数量由少变多，尺寸由小变大，最终消失。通过模拟温度场分析了不同温度下材料相变和表面张力的变化，发现在表面张力的驱动下液相硅凝固形成凸起，凸起导致激光能量不均匀沉积，最终形成微孔。这表明微孔自成形的物理机理为激光诱导材料相...
Keyword ：
皮秒激光扫描 皮秒激光扫描 自成形 自成形 微孔结构 微孔结构 激光光学 激光光学 硅 硅
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| GB/T 7714 | 李鑫 , 张彤 , 季凌飞 et al. 皮秒激光扫描硅材料微孔自成形行为及机理研究 [J]. | 激光与光电子学进展 , 2022 , 59 (01) : 233-240 . |
| MLA | 李鑫 et al. "皮秒激光扫描硅材料微孔自成形行为及机理研究" . | 激光与光电子学进展 59 . 01 (2022) : 233-240 . |
| APA | 李鑫 , 张彤 , 季凌飞 , 张犁天 . 皮秒激光扫描硅材料微孔自成形行为及机理研究 . | 激光与光电子学进展 , 2022 , 59 (01) , 233-240 . |
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Abstract ：
Laser-induced backside wet etching is a promising technology to process sapphire substrate. However, the conventional working media including toxic organic and heavy metal salt solutions is not environmentally friendly. In this paper, the backside wet etching of sapphire substrate with ink as a working solution by laser induced carbothermal reduction is achieved. Raman and XRD analyses demonstrate that ink can provide a stable carbon source and the carbothermal reduction of sapphire occurs during the etching. Numerical calculation reveals that the deposition of the carbon layer plays a crucial role in heating the sapphire to the temperature triggering the carbothermal reduction. The grooves etched by the laser-induced carbothermal reduction have smooth walls and good shape reproducibility. The linearly increase in etching depth with pulse number at the same laser fluence. The high-quality etching based on the carbothermal reduction as the etching mechanism is beneficial for fabricating microstructures on sapphire.
Keyword ：
Carbon deposition Carbon deposition Backside wet etching Backside wet etching Carbothermal reduction Carbothermal reduction Sapphire Sapphire
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| GB/T 7714 | Yan, Tianyang , Ji, Lingfei , Hong, Minghui . Backside wet etching of sapphire substrate by laser-induced carbothermal reduction [J]. | OPTICS AND LASER TECHNOLOGY , 2022 , 149 . |
| MLA | Yan, Tianyang et al. "Backside wet etching of sapphire substrate by laser-induced carbothermal reduction" . | OPTICS AND LASER TECHNOLOGY 149 (2022) . |
| APA | Yan, Tianyang , Ji, Lingfei , Hong, Minghui . Backside wet etching of sapphire substrate by laser-induced carbothermal reduction . | OPTICS AND LASER TECHNOLOGY , 2022 , 149 . |
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Abstract ：
Nanogrooves with a minimum feature size down to 30 nm (lambda/26) can be formed directly on silicon surface by irradiation from two orthogonal polarized 1064 nm/10 ns fiber laser beams. The creation of such small nanogrooves is attributed to surface thermal stress during resolidification and supercooling with the double laser beams' irradiation. By varying the pulse number and laser fluence, the feature size of narrow grooves on silicon surface can be tuned. The experimental results and numerical calculation of surface thermal behaviors indicated that the high repetition rate of the nanosecond laser leads to the incubation effect and different silicon optical and thermal properties during laser irradiation. Resolution on this scale should be attractive in nanolithography, particularly considering that this method is available in far field and in ambient air.
Keyword ：
thermal stress thermal stress nanocreation nanocreation nanosecond laser nanosecond laser silicon silicon
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| GB/T 7714 | Lin, Zhenyuan , Ji, Lingfei , Hong, Minghui . Approximately 30 nm Nanogroove Formation on Single Crystalline Silicon Surface under Pulsed Nanosecond Laser Irradiation [J]. | NANO LETTERS , 2022 , 22 (17) : 7005-7010 . |
| MLA | Lin, Zhenyuan et al. "Approximately 30 nm Nanogroove Formation on Single Crystalline Silicon Surface under Pulsed Nanosecond Laser Irradiation" . | NANO LETTERS 22 . 17 (2022) : 7005-7010 . |
| APA | Lin, Zhenyuan , Ji, Lingfei , Hong, Minghui . Approximately 30 nm Nanogroove Formation on Single Crystalline Silicon Surface under Pulsed Nanosecond Laser Irradiation . | NANO LETTERS , 2022 , 22 (17) , 7005-7010 . |
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Abstract ：
具有深微孔结构的铌酸锂晶体可以成为具有优良光波选择性调制功能的光子晶体器件。然而，目前使用的聚焦离子束刻蚀、化学刻蚀或常规激光制孔等方法很难获得光子晶体所需的高深径比微孔。本文基于飞秒脉冲高峰值功率、超短脉宽的基本特点，通过对光束进行贝塞尔整形以及对光束与铌酸锂晶体的相互作用进行调控和研究，用飞秒单脉冲在铌酸锂晶体内部一步制备出深径比约为700∶1的大面积均匀微孔阵列。测试结果表明，设计并制备的高深径比微孔阵列光子晶体结构对450～510 nm波长范围内的光束具有明显的选择透过性。
Keyword ：
超快激光 超快激光 激光技术 激光技术 贝塞尔光束 贝塞尔光束 光子晶体 光子晶体 深径比 深径比 铌酸锂 铌酸锂
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| GB/T 7714 | 孙伟高 , 季凌飞 , 郑锦灿 et al. 飞秒贝塞尔光束直写铌酸锂高深径比光子晶体结构 [J]. | 中国激光 , 2022 , 49 (10) : 151-159 . |
| MLA | 孙伟高 et al. "飞秒贝塞尔光束直写铌酸锂高深径比光子晶体结构" . | 中国激光 49 . 10 (2022) : 151-159 . |
| APA | 孙伟高 , 季凌飞 , 郑锦灿 , 温亚楠 , 王冠强 . 飞秒贝塞尔光束直写铌酸锂高深径比光子晶体结构 . | 中国激光 , 2022 , 49 (10) , 151-159 . |
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Abstract ：
A one-step laser lift-off (LLO) for patterned gallium nitride (GaN) film and GaN-based light-emitting diode (LED) device is achieved using 355 nm picosecond laser irradiation in this research. The laser fluence required for separation is 0.09-0.13 J cm(-2), which is much lower than that for the currently reported LLO methods. The separated GaN film is intact with only 0.04 GPa of residual stress. The ultra-smooth separated surface with root mean square roughness of only 5.2 nm is attributed to the interconnection of microcrack-free flat cavities formed by the combination of high photon energy-induced intrinsic absorption and subsequent plasma generation. The flat cavity with a depth-to-width ratio of 1:4000 limits the delamination region to a few nanometers at the GaN/sapphire interface. GaN-based LED is transferred with perfect electroluminescence (EL) by the strategy. The stable EL spectral peak positions and intensity independent of the bending state prove that the presented low-energy ultrafast LLO technique ensured the flexibility of the separated LED device without affecting the performance. This research provides a promising strategy to achieve the LLO of GaN devices with low energy consumption, high controllability, and high efficiency, which is significant for the industrial fabrication of flexible GaN-based electronics.
Keyword ：
ultrafast laser lift-off ultrafast laser lift-off flexible electronics flexible electronics plasma plasma GaN devices GaN devices photochemical decomposition photochemical decomposition
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| GB/T 7714 | Sun, Weigao , Ji, Lingfei , Lin, Zhenyuan et al. Low-Energy UV Ultrafast Laser Controlled Lift-Off for High-Quality Flexible GaN-Based Device [J]. | ADVANCED FUNCTIONAL MATERIALS , 2022 , 32 (8) . |
| MLA | Sun, Weigao et al. "Low-Energy UV Ultrafast Laser Controlled Lift-Off for High-Quality Flexible GaN-Based Device" . | ADVANCED FUNCTIONAL MATERIALS 32 . 8 (2022) . |
| APA | Sun, Weigao , Ji, Lingfei , Lin, Zhenyuan , Zheng, Jincan , Wang, Zhiyong , Zhang, Litian et al. Low-Energy UV Ultrafast Laser Controlled Lift-Off for High-Quality Flexible GaN-Based Device . | ADVANCED FUNCTIONAL MATERIALS , 2022 , 32 (8) . |
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Abstract ：
Scanning silicon surface with a picosecond laser with pulse width of 10 ps, frequency of 200 kHz and wavelength of 1064 nm will self-form microhole structure. By changing pulse energy density, scanning speed and scanning times, the evolution law of microhole is studied experimentally. The results show that the influence of different parameters on microholes can he summarized as pulse energy density and effective pulse number per unit area. With the increase of pulse energy density, the microholes gradually move to both sides of the groove, from the initial random arrangement to the one-dimensional linear uniform arrangement. With the increase of effective pulse number per unit area, the number of microholes on both sides of the edge changes from less to more, and the size changes from small to large, and finally microholes disappear. By simulating the temperature field, the change of phase transition and surface tension of materials at different temperatures was analyzed. It was found that liquid silicon solidified under the drive of surface tension to form protrusions, which led to uneven deposition of laser energy and finally formed microholes. This indicates that the physical mechanism of microhole self-forming is the combined action of laser-induced material phase transformation and Marangoni effect.
Keyword ：
microhole structure microhole structure laser optics laser optics silicon silicon picosecond laser scanning picosecond laser scanning self-formation self-formation
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| GB/T 7714 | Li Xin , Zhang Tong , Ji Lingfei et al. Study on Self-Forming Behavior and Mechanism of Silicon Microholes by Picosecond Laser Scanning [J]. | LASER & OPTOELECTRONICS PROGRESS , 2022 , 59 (1) . |
| MLA | Li Xin et al. "Study on Self-Forming Behavior and Mechanism of Silicon Microholes by Picosecond Laser Scanning" . | LASER & OPTOELECTRONICS PROGRESS 59 . 1 (2022) . |
| APA | Li Xin , Zhang Tong , Ji Lingfei , Zhang Litian . Study on Self-Forming Behavior and Mechanism of Silicon Microholes by Picosecond Laser Scanning . | LASER & OPTOELECTRONICS PROGRESS , 2022 , 59 (1) . |
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Abstract ：
Traditional mechanical bone drilling is prone to heat generation and debris accumulation which will cause tissue damage in orthopedic surgeries. Therefore, research on contactless laser bone drilling has become a mainstream trend in the development of bone surgery. This study presents a laser rapid drilling strategy for bone surgery with minimizing thermal osteonecrosis and debris based on the design of dynamic focusing and spreading droplet cooling. The laser drilled hole suffered from low temperature (T-max = 46.2 ?) under clinically accepted threshold of 47 ?, presenting osteocyte-filled lacunas, visible Haversian canals and increased pullout strength when compared with that following mechanically drilling. An intact bone column without debris was extracted from a 4-mm-deep hole in vitro on a sheep tibia which provides a clean surgical method with increased drilling rate of 0.94 mm(3)/s. The criteria dimensionless We constant related to spreading droplets leading to effective heat transfer is determined as2.8 x 10(3) x Re-1/2 <= We <= 1.9 x 10(-2) x Re-7, yielding a high convective coefficient of 0.11 W/mm(2).K for cooling. The comprehensive results of laser bone drilling proved the effectiveness of the presented technology and setup, which is significant in realizing rapid, debris-free orthopedic surgery. (C) 2022 The Author(s). Published by Elsevier Ltd.
Keyword ：
Bone drilling Bone drilling Mechanical properties Mechanical properties Orthopedic surgery Orthopedic surgery Thermal analysis Thermal analysis Histology Histology
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| GB/T 7714 | Ji, Lingfei , Zhang, Litian , Cao, Lijie et al. Laser rapid drilling of bone tissue in minimizing thermal injury and debris towards orthopedic surgery [J]. | MATERIALS & DESIGN , 2022 , 220 . |
| MLA | Ji, Lingfei et al. "Laser rapid drilling of bone tissue in minimizing thermal injury and debris towards orthopedic surgery" . | MATERIALS & DESIGN 220 (2022) . |
| APA | Ji, Lingfei , Zhang, Litian , Cao, Lijie , Zheng, Jincan , Wang, Junqiang , Han, Wei et al. Laser rapid drilling of bone tissue in minimizing thermal injury and debris towards orthopedic surgery . | MATERIALS & DESIGN , 2022 , 220 . |
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Abstract ：
Characteristics and formation mechanism of filamentary plasma string induced by single picosecond laser pulse in sapphire are studied experimentally and numerically. Relative brightness and spatial distribution of the filamentary plasma string are characterized by time-resolved luminescence images. The whole filamentary plasma string is composed of a leading plasma string with stronger brightness and a tailing plasma string with weaker brightness. The numerical analysis shows that the different characteristics of filamentary plasma string are related to the two types of spatiotemporal evolution stages. The pivotal role of avalanche ionization for different spatiotemporal evolution stages is revealed. The filamentary plasma string induced by single pulse has a guiding significance for the subsequent pulse nonlinear propagation and the material modification; all the above provides basic information for the multi-pulse filamentation and the laser-induced filamentation processing of sapphire.
Keyword ：
Nonlinear ionization Nonlinear ionization Picosecond laser Picosecond laser Spatiotemporal evolution Spatiotemporal evolution Filamentary plasma string Filamentary plasma string Sapphire Sapphire
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| GB/T 7714 | Yan, Tianyang , Ji, Lingfei , Sun, Weigao . Characteristics and formation mechanism of filamentary plasma string induced by single picosecond laser pulse in sapphire [J]. | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , 2022 , 128 (1) . |
| MLA | Yan, Tianyang et al. "Characteristics and formation mechanism of filamentary plasma string induced by single picosecond laser pulse in sapphire" . | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 128 . 1 (2022) . |
| APA | Yan, Tianyang , Ji, Lingfei , Sun, Weigao . Characteristics and formation mechanism of filamentary plasma string induced by single picosecond laser pulse in sapphire . | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING , 2022 , 128 (1) . |
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