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学者姓名：张永哲
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Abstract ：
The integrity of the hydrogenated amorphous silicon/crystalline silicon (a-Si:H/c-Si) interface is essential for the enhanced performance of a-Si:H/c-Si heterojunction-based devices. However, during annealing processes aimed at passivating silicon dangling bonds, unexpected Si epitaxy and nanotwin formation tend to emerge, even under low-temperature conditions. Therefore, understanding the influence of such annealing on the a-Si:H/c-Si interfacial structure is therefore pivotal for device optimization. In this study, the atomic-scale structural transformation of the a-Si:H/c-Si heterointerface subjected to low-temperature annealing is delved into. The dynamic evolution of this interface is captured by employing in situ spherical aberration (CS)-corrected transmission electron microscopy (TEM), molecular dynamics (MD) simulations, and density functional theory (DFT) calculations. The TEM observations indicated that Si epitaxy initiated before Si nanotwin formation, and these nanotwins are inclined to revert to epitaxial structures upon sustained annealing. Through MD and DFT insights, the thermodynamic and kinetic intricacies driving the concerted tri-layer atomic shift characterizing the Si nanotwin-to-epitaxy transition are decoded. The findings shed light on the thermal behavior of a-Si:H/c-Si interfaces, offering new perspectives on the thermal management in silicon heterojunction devices.
Keyword ：
dynamics dynamics Cs-corrected TEM Cs-corrected TEM a-Si:H/c-Si a-Si:H/c-Si interface structure interface structure low-temperature annealing low-temperature annealing
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| GB/T 7714 | Qu, Xianlin , Chu, Feihong , He, Yongcai et al. Atomic-Scale Structural Dynamics at a-Si:H/c-Si Heterointerface During Low-Temperature Thermal Annealing [J]. | ADVANCED FUNCTIONAL MATERIALS , 2024 . |
| MLA | Qu, Xianlin et al. "Atomic-Scale Structural Dynamics at a-Si:H/c-Si Heterointerface During Low-Temperature Thermal Annealing" . | ADVANCED FUNCTIONAL MATERIALS (2024) . |
| APA | Qu, Xianlin , Chu, Feihong , He, Yongcai , Chen, Xiaoqing , Zheng, Zilong , Xu, Xixiang et al. Atomic-Scale Structural Dynamics at a-Si:H/c-Si Heterointerface During Low-Temperature Thermal Annealing . | ADVANCED FUNCTIONAL MATERIALS , 2024 . |
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Abstract ：
The performance of perovskite solar cells (PSCs) is critically influenced by the quality of interfaces, including grain boundaries and perovskite surfaces. These interfaces are often highly defective, leading to non-radiative recombination and impaired charge transfer. Additionally, operational conditions can induce undesirable chemical reactions, affecting long-term stability. This review summarizes advancements over the past five years in achieving high-efficiency (near or above 25%) through interface passivation. Notably, using two-dimensional/three-dimensional (2D/3D) hybrid perovskites, which combine the stability of 2D perovskites with the efficiency of 3D perovskites, has emerged as a promising strategy. We reviewed recent progress in interface passivation strategies, focusing on the implementation of 2D/3D perovskite passivation across buried interfaces, grain boundaries and top interfaces. Finally, we discussed challenges and future directions for multi-interface cooperative passivation, charge dynamics and degradation mechanisms. A review of recent advancements in interface passivation strategies, with a particular focus on the implementation of 2D/3D perovskite passivation across buried interfaces, grain boundaries, and top interfaces.
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| GB/T 7714 | Huang, He , Zhang, Xiaobo , Zhou, Wencai et al. Interface passivation strategies for high-performance perovskite solar cells using two-dimensional perovskites [J]. | MATERIALS CHEMISTRY FRONTIERS , 2024 . |
| MLA | Huang, He et al. "Interface passivation strategies for high-performance perovskite solar cells using two-dimensional perovskites" . | MATERIALS CHEMISTRY FRONTIERS (2024) . |
| APA | Huang, He , Zhang, Xiaobo , Zhou, Wencai , Huang, Yong , Zheng, Zilong , Chen, Xiaoqing et al. Interface passivation strategies for high-performance perovskite solar cells using two-dimensional perovskites . | MATERIALS CHEMISTRY FRONTIERS , 2024 . |
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Abstract ：
Currently, colloidal quantum dots (CQDs) photodetectors have shown significant advancement in the field of infrared photodetection. However, the immature analysis of dark current components hinders the realization of higher performance quantum dots optoelectrical devices. In this study, based on a PbS CQD photodetector, we employ a conventional dark current model of infrared photodetectors to analyze the dark current components of the device, yielding fitting results highly consistent with experimental observations. Our findings indicate that with increasing reverse bias, the dominant dark current components of the PbS CQD photodetector shift from diffusion (Diff) current, generation-recombination (G-R) current, and shunt (sh) current to trap-assisted tunneling (TAT) current. The band diagrams, recombination rates, carrier density distributions, and electric field intensity maps under different biases are further simulated, of which the theoretical results confirm that current components transition is attributed to the abundance of defects in quantum dot materials, leading to tunneling at the interface between the SnO2 layer and PbS-I layer under high bias conditions. Our work contributes to providing insight and direction for optimizing the CQD photodetector performances.
Keyword ：
tunneling tunneling Colloidal quantum dots (CQDs) Colloidal quantum dots (CQDs) photodetectors photodetectors electrooptic devices electrooptic devices
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| GB/T 7714 | Yan, Qi , Deng, Wenjie , Ma, Xueliang et al. Trap-Assisted Tunneling in PbS Colloidal Quantum Dots Photodetector [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2024 , 71 (10) : 6085-6090 . |
| MLA | Yan, Qi et al. "Trap-Assisted Tunneling in PbS Colloidal Quantum Dots Photodetector" . | IEEE TRANSACTIONS ON ELECTRON DEVICES 71 . 10 (2024) : 6085-6090 . |
| APA | Yan, Qi , Deng, Wenjie , Ma, Xueliang , Wu, Yi , Li, Jingzhen , You, Congya et al. Trap-Assisted Tunneling in PbS Colloidal Quantum Dots Photodetector . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2024 , 71 (10) , 6085-6090 . |
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Abstract ：
Two-dimensional materials with high anisotropic optical properties and high exciton binding energy offer great advantages for developing nanostructure electronic and optoelectronic devices. However, conduction electron scattering from surface defects caused by the short width and length of the channel layer in semiconductor devices blocks their application. In this research, NaP15 is considered as another kind of layered material with high anisotropic properties. Its anisotropic layered structure was revealed by its detailed crystal structure and electron-density distribution calculation, which showed two antiparallel rows of pentagonal P tubes interacting with weak Coulomb forces and four adjacent P tubes in one unit coordinated by Na atoms. The outstanding chemical stability, angle-resolved polarized and temperature-dependent Raman spectroscopy, and neutral exciton emission caused by surface state excitation in exfoliated NaP15 nanoribbons at room temperature clearly reveal its one-dimensional layered property. The distinctive structural characteristics and electronic properties render it with substantial potential for applications in the realm of polarimetric detectors.
Keyword ：
quasi-1D nanoribbon quasi-1D nanoribbon anisotropicexcitonresponse anisotropicexcitonresponse NaP15 NaP15 anisotropic temperature-dependent Raman anisotropic temperature-dependent Raman anisotropy anisotropy
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| GB/T 7714 | Li, Guoliang , Zhang, Dandan , Tian, Nan et al. Exfoliated Layered NaP15 Nanoribbons with Anisotropic Properties for Polarization Devices [J]. | ACS APPLIED NANO MATERIALS , 2024 , 7 (12) : 14487-14493 . |
| MLA | Li, Guoliang et al. "Exfoliated Layered NaP15 Nanoribbons with Anisotropic Properties for Polarization Devices" . | ACS APPLIED NANO MATERIALS 7 . 12 (2024) : 14487-14493 . |
| APA | Li, Guoliang , Zhang, Dandan , Tian, Nan , Liu, Danmin , Zhang, Yongzhe , Yang, Yanhan . Exfoliated Layered NaP15 Nanoribbons with Anisotropic Properties for Polarization Devices . | ACS APPLIED NANO MATERIALS , 2024 , 7 (12) , 14487-14493 . |
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Abstract ：
Herein, through the analysis of devices with different passivation pretreatment processes, it is found that after surface corrosion, the optimized process of O3 treatment combined with hydrochloric acid and H3PO4/C6H8O7/H2O2/H2O treatments can significantly improve the electrical performance of the device. By analyzing the curves of dark current density varying with temperature of the mid-wavelength (MW) and long-wavelength (LW) dual-color devices, it is verified that there are three leakage mechanisms in the device: diffusion current, trap-assisted tunneling current, and generation-recombination current. Finally, a 640 x 512 MW/LW dual-color superlattice infrared detector is fabricated with a pixel pitch of 20 mu m. The cutoff wavelength of the MW channel is 5.04 mu m. The cutoff wavelength of the LW channel is 9.51 mu m. The noise equivalent temperature difference of MW is 16.5 mK and LW is 35.1 mK. The photoresponse nonuniformity is 6.21% for MW and 10.51% for LW. The blind pixel rate is 0.66% for MW and 8.56% for LW. The imaging demonstration is completed. The research has laid the foundation for the engineering application of dual-color infrared detectors. This work first studies passivation pretreatment processes, finding that an optimized process combining O3 treatment, HCl, and H3PO4/C6H8O7/H2O2/H2O treatment after surface mesa can significantly improve electrical performance. The dark current mechanisms are then studied through temperature-dependent measurements. Finally, a 640 x 512 mid-wavelength/long-wavelength dual-color superlattice infrared detector is fabricated and characterized.image (c) 2024 WILEY-VCH GmbH
Keyword ：
imaging imaging dual-color dual-color mechanisms mechanisms dark current density dark current density
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| GB/T 7714 | Wang, Xiaohua , Li, Jingzhen , Yan, Yong et al. Investigation of Passivation Pretreatment Processes for Mid-/Long-Wavelength Dual-Band Infrared Focal Plane Arrays Based on Type-II InAs/GaSb Superlattices [J]. | ADVANCED ENGINEERING MATERIALS , 2024 , 26 (10) . |
| MLA | Wang, Xiaohua et al. "Investigation of Passivation Pretreatment Processes for Mid-/Long-Wavelength Dual-Band Infrared Focal Plane Arrays Based on Type-II InAs/GaSb Superlattices" . | ADVANCED ENGINEERING MATERIALS 26 . 10 (2024) . |
| APA | Wang, Xiaohua , Li, Jingzhen , Yan, Yong , Wen, Tao , Zhou, Peng , Hu, Yunong et al. Investigation of Passivation Pretreatment Processes for Mid-/Long-Wavelength Dual-Band Infrared Focal Plane Arrays Based on Type-II InAs/GaSb Superlattices . | ADVANCED ENGINEERING MATERIALS , 2024 , 26 (10) . |
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Abstract ：
High-definition near-eye display technology has extremely close sight distance, placing a higher demand on the size, performance, and array of light-emitting pixel devices. Based on the excellent photoelectric performance of metal halide perovskite materials, perovskite light-emitting diodes (PeLEDs) have high photoelectric conversion efficiency, adjustable emission spectra, and excellent charge transfer characteristics, demonstrating great prospects as next-generation light sources. Despite their potential, the solubility of perovskite in photoresist presents a hurdle for conventional micro/nano processing techniques, resulting in device sizes typically exceeding 50 mu m. This limitation impedes the further downsizing of perovskite-based components. Herein, we propose a plane-structured PeLED device that can achieve microscale light-emitting diodes with a single pixel device size < 2 mu m and a luminescence lifetime of approximately 3 s. This is accomplished by fabricating a patterned substrate and regulating ion distribution in the perovskite through self-doping effects to form a PN junction. This breakthrough overcomes the technical challenge of perovskite-photoresist incompatibility, which has hindered the development of perovskite materials in micro/nano optoelectronic devices. The strides made in this study open up promising avenues for the advancement of PeLEDs within the realm of micro/nano optoelectronic devices.
Keyword ：
passivation passivation ion migration ion migration perovskite perovskite light-emitting diode light-emitting diode self-doping self-doping
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| GB/T 7714 | Gao, Wenzhe , Huang, He , Wang, Chenming et al. Microscale Lateral Perovskite Light Emitting Diode Realized by Self-Doping Phenomenon [J]. | SENSORS , 2024 , 24 (14) . |
| MLA | Gao, Wenzhe et al. "Microscale Lateral Perovskite Light Emitting Diode Realized by Self-Doping Phenomenon" . | SENSORS 24 . 14 (2024) . |
| APA | Gao, Wenzhe , Huang, He , Wang, Chenming , Zhang, Yongzhe , Zheng, Zilong , Li, Jinpeng et al. Microscale Lateral Perovskite Light Emitting Diode Realized by Self-Doping Phenomenon . | SENSORS , 2024 , 24 (14) . |
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Abstract ：
Grain boundaries (GBs) have a significant role in polycrystalline perovskite solar cells (PSCs). However, there is ongoing debate regarding the impact of GBs on the performance and long-term stability of PSCs. Employing the first-principles molecular dynamics for perovskites, the iodine vacancy defect migrations both in bulk and at GBs are investigated. i) The positive iodine vacancy (VI+) is found that have both lower formation energy (1.4 eV) and activation energy (0.18 eV) than those of neutral iodine vacancy (VI), statistically. It indicated the VI+ acts as the dominant migrated iodine vacancy rather than VI; ii) the iodine vacancy at GBs has approximate to 0.48 eV higher activation energy than those in bulk, which leads to the accumulation of iodine vacancy at GBs; iii) the presence of VI+ result in a 3-fold increase in charge recombination ratio at GBs, compared to pristine PSCs. Based on quantum molecular dynamics statistical results, which are consistent with experimental measurements, insights into iodine vacancy migration both at GBs and in the bulk are gained. This understanding can be valuable for defects engineering related to ion migration, in order to improve the long-term stability and promote the performance of PSCs. Understanding defects engineering related to ion migration is crucial for enhancing the long-term stability and performance of hybrid perovskite solar cells. Iodine vacancies accumulate at grain boundaries due to lower formation energy and higher migration potential barrier compared to those in the bulk, which further increase the nonradiative recombination. image
Keyword ：
charge recombination charge recombination ion migration ion migration Ab-initio molecular dynamics simulations Ab-initio molecular dynamics simulations perovskite perovskite grain boundaries grain boundaries
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| GB/T 7714 | Zhou, Wencai , Chen, Xiaoqing , Zhou, Rongkun et al. The Role of Grain Boundaries on Ion Migration and Charge Recombination in Halide Perovskites [J]. | SMALL , 2024 , 20 (32) . |
| MLA | Zhou, Wencai et al. "The Role of Grain Boundaries on Ion Migration and Charge Recombination in Halide Perovskites" . | SMALL 20 . 32 (2024) . |
| APA | Zhou, Wencai , Chen, Xiaoqing , Zhou, Rongkun , Cai, Hongbo , Wang, Yun , Zhang, Tiankai et al. The Role of Grain Boundaries on Ion Migration and Charge Recombination in Halide Perovskites . | SMALL , 2024 , 20 (32) . |
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Abstract ：
一种钙钛矿‑晶硅叠层太阳能电池结构，属于太阳能电池领域。包括钙钛矿顶电池、晶硅底电池与复合结层。所述钙钛矿顶电池依次设置为金属电极、透明电极层、空穴传输层、钙钛矿光吸收层、电子传输层；所述晶硅底电池依次设置为氧化钼空穴传输层、本征氢化非晶硅钝化层、晶硅光吸收层、本征氢化非晶硅钝化层、氟化锂/铝复合电极层；钙钛矿电池与底电池之间通过复合结相联结。本实用新型使用氧化钼作为晶硅底电池的空穴传输层，具有更好的空穴选择性以及更小的寄生吸收，使用氟化锂/铝作为晶硅底电池的复合电极，可以降低晶硅与电极间的肖特基势垒，有利于电子的传输，提升了单个太阳能电池器件的光电转换效率。
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| GB/T 7714 | 郑子龙 , 杨熙其 , 严辉 et al. 一种钙钛矿-晶硅叠层太阳能电池结构 : CN202320566535.X[P]. | 2023-03-21 . |
| MLA | 郑子龙 et al. "一种钙钛矿-晶硅叠层太阳能电池结构" : CN202320566535.X. | 2023-03-21 . |
| APA | 郑子龙 , 杨熙其 , 严辉 , 张永哲 , 陈小青 , 王如志 . 一种钙钛矿-晶硅叠层太阳能电池结构 : CN202320566535.X. | 2023-03-21 . |
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Abstract ：
This review summarizes the operational principles of Indium Arsenide (InAs) nanowire photodetectors under different light conditions and the various approaches designed to optimize their performance. InAs nanowires are highly regarded as potential candidates for the next generation of optoelectronic devices, attributed to their exceptional optical and electrical characteristics. However, the surface states and defects of InAs nanowires lead to complex photoresponse mechanisms under different illumination conditions and greatly affect their performance. Therefore, various approaches have been proposed to enhance their performance, including surface passivation, doping, and construction of heterojunctions, etc. This review categorizes these different techniques, discusses their respective advantages and limitations, and provides an outlook on future developments in this field.
Keyword ：
Photodetector Photodetector InAs InAs Nanowire Nanowire Infrared Infrared
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| GB/T 7714 | Chen, Haonan , Li, Jingzhen , Cao, Shengzhu et al. InAs nanowire visible-infrared detector photoresponse engineering [J]. | INFRARED PHYSICS & TECHNOLOGY , 2023 , 133 . |
| MLA | Chen, Haonan et al. "InAs nanowire visible-infrared detector photoresponse engineering" . | INFRARED PHYSICS & TECHNOLOGY 133 (2023) . |
| APA | Chen, Haonan , Li, Jingzhen , Cao, Shengzhu , Deng, Wenjie , Zhang, Yongzhe . InAs nanowire visible-infrared detector photoresponse engineering . | INFRARED PHYSICS & TECHNOLOGY , 2023 , 133 . |
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Two-dimensional (2D) ferroelectric field-effect transistors (Fe-FETs) have attracted extensive interest as a competitive platform for implementing future-generation functional electronics, including digital memory and brain-inspired computing circuits. In 2D Fe-FETs, the 2D ferroelectric materials are more suitable as gate dielectric materials compared to 3D ferroelectric materials. However, the current 2D ferroelectric materials (represented by alpha-In2Se3) need to be integrated with other 3D gate dielectric layers because of their high conductivity as a ferroelectric semiconductor. This 2D/3D hybrid structure can lead to compatibility problems in practical devices. In this study, a new 2D gate dielectric material that is compatible with the complementary metal-oxide semiconductor process was found by using oxygen plasma treatment. The 2D gate dielectric material obtained shows excellent performance, with an equivalent oxide thickness of less than 0.15 nm, and excellent insulation, with a leakage current of less than 2 x 10(-5) A cm(-2) (under a 1 V gate voltage). Based on this dielectric layer and the alpha-In2Se3 ferroelectric gate material, we fabricated an all-2D Fe-FET high-performance photodetector with a high on/off ratio (similar to 10(5)) and detectivity (>10(13) Jones). Moreover, the photoelectric device integrates perception, memory and computing characteristics, indicating that it can be applied to an artificial neural network for visual recognition.
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| GB/T 7714 | Li, Xuhong , Chen, Xiaoqing , Deng, Wenjie et al. An all-two-dimensional Fe-FET retinomorphic sensor based on the novel gate dielectric In2Se3-xOx [J]. | NANOSCALE , 2023 , 15 (25) : 10705-10714 . |
| MLA | Li, Xuhong et al. "An all-two-dimensional Fe-FET retinomorphic sensor based on the novel gate dielectric In2Se3-xOx" . | NANOSCALE 15 . 25 (2023) : 10705-10714 . |
| APA | Li, Xuhong , Chen, Xiaoqing , Deng, Wenjie , Li, Songyu , An, Boxing , Chu, Feihong et al. An all-two-dimensional Fe-FET retinomorphic sensor based on the novel gate dielectric In2Se3-xOx . | NANOSCALE , 2023 , 15 (25) , 10705-10714 . |
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