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学者姓名：邓金祥
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Abstract ：
The wide band gap semiconductor Ga2O3 has become an excellent UV detection material due to its suitable band gap, high crystalline quality and thermal stability. In this paper, the microstructure of Ga2O3 with different thicknesses is characterized and the solar-blind detection performance of Ga2O3/p-Si heterojunctions are further investigated. XRD and UV-VIS demonstrate that Ga2O3 sputtered for 20 min is amorphous with a band gap of 4.98 eV, as the sputtering time increases, Ga2O3 grows along the (002) crystal plane and the band gap increases. XPS reveals that the lattice oxygen content in the Ga2O3 increases with the sputtering time, however, the Ga3+ content reaches a peak in Ga2O3 sputtered for 1.5 h. And the increasing of the binding energy between Ga-O in Ga2O3/p-Si heterojunctions accelerates response speed. Electrical experiments show that the heterojunction consisting of sputtered 1.5 h Ga2O3 and p-Si reaches a higher PDCR, with a value of 6684 at 5.7 V. Meanwhile, the rise and decay time of the heterojunction are 0.13 s and 0.14 s at 0 V, and the decay time gradually increases from 0.1 to 0.7 s with increasing the applied voltage. However, insertion of 20 nm Si-doped Ga2O3 as a hole-blocking layer at the interface of p-Si and Ga2O3 remarkably declines the decay time under various applied biases and causes no obvious damage to the photo current of the heterojunction.
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| GB/T 7714 | Zhang, Q. , Gao, H. L. , Deng, J. X. et al. The performance of ultraviolet solar-blind detection of p-Si/n-Ga2O3 heterojunctions with/without hole-blocking layer [J]. | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , 2024 , 35 (17) . |
| MLA | Zhang, Q. et al. "The performance of ultraviolet solar-blind detection of p-Si/n-Ga2O3 heterojunctions with/without hole-blocking layer" . | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 35 . 17 (2024) . |
| APA | Zhang, Q. , Gao, H. L. , Deng, J. X. , Meng, X. , Tian, K. , Xu, J. W. et al. The performance of ultraviolet solar-blind detection of p-Si/n-Ga2O3 heterojunctions with/without hole-blocking layer . | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , 2024 , 35 (17) . |
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Abstract ：
采用射频磁控溅射法在石英基底上制备Ga2O3薄膜,并在氩气气氛中控制不同的退火温度进行后退火,通过对样品的晶体结构、透射率、表面形貌和光学带隙等性质进行测试分析,发现退火工艺可以提升薄膜的结晶质量,但同时高温退火也容易使得薄膜中的氧元素逸出薄膜外形成氧空位,选取800℃退火后样品制备成金属-半导体-金属(metal-semiconductor-metal,MSM)型光电探测器件,并与未退火样品器件对比发现在1.1 V的反向偏压下,800℃的光暗电流比为1021.3、响应度为0.106 A/W、比探测率为1.61×1012 Jones,分别是未退火器件的7.5,195和38.3倍,外量子效率相较于未退火样品提升了51.6％,上升时间(0.19/0.48 s)相较于未退火样品(0.93/0.93 s)减小,下降时间(0.64/0.72 s)与未退火样品(0.45/0.49 s)相比有所增大,表明氧空位的增加可以减缓光生载流子的复合来达到延长载流子寿命的效果,最后详细分析了退火后氧空位的增多导致探测器性能参数提高的机理.
Keyword ：
日盲探测器 日盲探测器 后退火温度 后退火温度 氧化镓 氧化镓 射频磁控溅射 射频磁控溅射
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| GB/T 7714 | 落巨鑫 , 高红丽 , 邓金祥 et al. 退火温度对氧化镓薄膜及紫外探测器性能的影响 [J]. | 物理学报 , 2023 , 72 (2) : 347-356 . |
| MLA | 落巨鑫 et al. "退火温度对氧化镓薄膜及紫外探测器性能的影响" . | 物理学报 72 . 2 (2023) : 347-356 . |
| APA | 落巨鑫 , 高红丽 , 邓金祥 , 任家辉 , 张庆 , 李瑞东 et al. 退火温度对氧化镓薄膜及紫外探测器性能的影响 . | 物理学报 , 2023 , 72 (2) , 347-356 . |
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Abstract ：
The structural and gas-sensitive properties of n-N SnO2/?(e)-Ga2O3:Sn heterostructures were investigated in detail for the first time. The ?(e)-Ga2O3:Sn and SnO2 films were grown by the halide vapor phase epitaxy and the high-frequency magnetron sputtering, respectively. The gas sensor response and speed of operation of the structures under H-2 exposure exceeded the corresponding values of single ?(e)-Ga2O3:Sn and SnO2 films within the temperature range of 25-175 & DEG;C. Meanwhile, the investigated heterostructures demonstrated a low response to CO, NH3, and CH4 gases and a high response to NO2, even at low concentrations of 100 ppm. The current responses of the SnO2/?(e)-Ga2O3:Sn structure to 10(4) ppm of H-2 and 100 ppm of NO2 were 30-47 arb. un. and 3.7 arb. un., correspondingly, at a temperature of 125 & DEG;C. The increase in the sensitivity of heterostructures at low temperatures is explained by a rise of the electron concentration and a change of a microrelief of the SnO2 film surface when depositing on ?(e)-Ga2O3:Sn. The SnO2/?(e)-Ga2O3:Sn heterostructures, having high gas sensitivity over a wide operating temperature range, can find application in various fields.
Keyword ：
n-N heterostructure n-N heterostructure SnO2 SnO2 HVPE HVPE gas sensors gas sensors Sn Sn & kappa;(& epsilon;)-Ga2O3 & kappa;(& epsilon;)-Ga2O3 magnetron sputtering magnetron sputtering
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| GB/T 7714 | Almaev, Aleksei , Yakovlev, Nikita , Kopyev, Viktor et al. High Sensitivity Low-Temperature Hydrogen Sensors Based on SnO2/& kappa;(& epsilon;)-Ga2O3:Sn Heterostructure [J]. | CHEMOSENSORS , 2023 , 11 (6) . |
| MLA | Almaev, Aleksei et al. "High Sensitivity Low-Temperature Hydrogen Sensors Based on SnO2/& kappa;(& epsilon;)-Ga2O3:Sn Heterostructure" . | CHEMOSENSORS 11 . 6 (2023) . |
| APA | Almaev, Aleksei , Yakovlev, Nikita , Kopyev, Viktor , Nikolaev, Vladimir , Butenko, Pavel , Deng, Jinxiang et al. High Sensitivity Low-Temperature Hydrogen Sensors Based on SnO2/& kappa;(& epsilon;)-Ga2O3:Sn Heterostructure . | CHEMOSENSORS , 2023 , 11 (6) . |
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Abstract ：
Nb-doped beta-Ga2O3 films were deposited on p-Si (100) and quartz substrates using radio frequency magnetron sputtering technology at various substrate temperatures. All the films annealed in an argon ambient. The surface morphology and crystal structure of the films were studied using atomic force microscope and x-ray diffraction technologies, and the results indicated that the film had a flat surface and a good crystal structure when the substrate temperature was 523 K. We investigated the optical properties of the samples, and the results highlight that Nb-doped beta-Ga2O3 films exhibit high transmittance of above 80% to UV-visible light with a wavelength above 400 nm. Furthermore, the optical band gap of the Nb-doped beta-Ga2O3 films decreases with increasing substrate temperature. The electrical characteristics show that the current is larger, and that the contact between the Ag electrode and the Nb-doped beta-Ga2O3 film is an ohmic contact, when the substrate temperature is 523 K. All the results are beneficial for practical applications.
Keyword ：
substrate temperature substrate temperature optical properties optical properties Nb-doped beta-Ga2O3 film Nb-doped beta-Ga2O3 film morphology and roughness morphology and roughness electrical characteristics electrical characteristics
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| GB/T 7714 | Li, Ruidong , Deng, Jinxiang , Kong, Le et al. Influence of Substrate Temperature on Structure and Properties of Nb-Doped beta-Ga2O3 Films [J]. | JOURNAL OF ELECTRONIC MATERIALS , 2022 , 51 (5) : 2390-2395 . |
| MLA | Li, Ruidong et al. "Influence of Substrate Temperature on Structure and Properties of Nb-Doped beta-Ga2O3 Films" . | JOURNAL OF ELECTRONIC MATERIALS 51 . 5 (2022) : 2390-2395 . |
| APA | Li, Ruidong , Deng, Jinxiang , Kong, Le , Meng, Junhua , Luo, Juxin , Zhang, Qing et al. Influence of Substrate Temperature on Structure and Properties of Nb-Doped beta-Ga2O3 Films . | JOURNAL OF ELECTRONIC MATERIALS , 2022 , 51 (5) , 2390-2395 . |
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Abstract ：
Here, niobium-doped monoclinic gallium oxide thin films of different thicknesses were deposited on p-Si (100) and quartz substrates by radio-frequency magnetron sputtering. All films were annealed in argon ambient. The crystal structure and surface morphology of the films were researched using x-ray diffraction and scanning electron microscopy. Then, their crystallite size was evaluated via the Debye-Scherrer formula. The results demonstrated that the films had a good crystal structure and a flat surface when the thickness was around 300 nm. The films' optical properties were also investigated, and the results showed that all of the films' transmittance is above 80% to ultraviolet-visible light whose wavelength is above 350 nm. Meanwhile, the films' optical band gap decreased as their thickness increased. The Urbach energy of all films was calculated by the Urbach rule, and the results indicated that the best crystal quality occurred when the thickness was around 300 nm. The films' electrical characteristics showed that the current was larger when the thickness was around 300 nm and that the contact between the Au electrode and films was Ohmic contact, independent of the film thickness and test conditions. These findings will provide useful information for the practical application of Nb-doped beta-Ga2O3 thin films.
Keyword ：
structure structure Thickness Thickness Nb-doped beta-Ga2O3 film Nb-doped beta-Ga2O3 film morphology morphology optical properties optical properties electrical characterization electrical characterization
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| GB/T 7714 | Li, Ruidong , Deng, Jinxiang , Xie, Peng et al. Effect of Thickness on Morphology, Structural, and Optical Properties of Nb-Doped beta-Ga2O3 Films Prepared by RF Magnetron Sputtering [J]. | JOURNAL OF ELECTRONIC MATERIALS , 2022 , 52 (1) : 251-257 . |
| MLA | Li, Ruidong et al. "Effect of Thickness on Morphology, Structural, and Optical Properties of Nb-Doped beta-Ga2O3 Films Prepared by RF Magnetron Sputtering" . | JOURNAL OF ELECTRONIC MATERIALS 52 . 1 (2022) : 251-257 . |
| APA | Li, Ruidong , Deng, Jinxiang , Xie, Peng , Zhang, Qing , Meng, Xue , Luo, Juxin et al. Effect of Thickness on Morphology, Structural, and Optical Properties of Nb-Doped beta-Ga2O3 Films Prepared by RF Magnetron Sputtering . | JOURNAL OF ELECTRONIC MATERIALS , 2022 , 52 (1) , 251-257 . |
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Abstract ：
(BixGa1-x)2O3 films were prepared at 820 °C by sol-gel method, an ethylene glycol solution of hydrated gallium nitrate and bismuth nitrate stabilized by monoethanolamine, of which crystallization, surface morphology and electronic structure as well as optical properties were studied in detail by X-ray diffraction, Scanning electron microscope-energy dispersive spectrometer, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and Ultraviolet-visible spectroscopy. XRD showed Ga2O3 film prepared from solutions consisted of two crystal structures, β and γ, increasing Bi atoms into Ga2O3 that enable the inhibition of γ phase formation and (BixGa1-x)2O3 and Ga2O3 capable of holding the same monoclinic crystal structure. EDS displayed (BixGa1-x)2O3 films of varied compositions were obtained with content of different Bi atoms into the solution, which kept same monoclinic crystal as β-Ga2O3 when Bi ranged from 0 < x < 0.056. FTIR revealed that the absorption band below 480 cm−1 corresponded to the octahedral position of Ga2O3 and the Bi atoms in the (BixGa1-x)2O3 films substituted the Ga in the [GaO6] octahedron. XPS exhibited increasing Bi content raised Ga3+/Ga ratio. UV-VIS provided evidence that optical band gap of (BixGa1-x)2O3 down to 3.2 eV indicating Bi-doping achieved Ga2O3 band gap tunable, concurrently, the bowing parameter c = 1.83 eV was obtained on the basis of the fitting curve of band gap. [Figure not available: see fulltext.]. © 2022, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.
Keyword ：
(BixGa1-x)2O3; Alloy; Band gap; Ga2O3; Sol-gel (BixGa1-x)2O3; Alloy; Band gap; Ga2O3; Sol-gel
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| GB/T 7714 | Zhang, Q. , Deng, J.X. , Li, R.D. et al. Study on the structure and properties of gallium bismuth oxide alloy thin films prepared by sol-gel method [J]. | Journal of Sol-Gel Science and Technology , 2022 , 103 (1) : 280-289 . |
| MLA | Zhang, Q. et al. "Study on the structure and properties of gallium bismuth oxide alloy thin films prepared by sol-gel method" . | Journal of Sol-Gel Science and Technology 103 . 1 (2022) : 280-289 . |
| APA | Zhang, Q. , Deng, J.X. , Li, R.D. , Luo, J.X. , Kong, L. , Meng, J.H. et al. Study on the structure and properties of gallium bismuth oxide alloy thin films prepared by sol-gel method . | Journal of Sol-Gel Science and Technology , 2022 , 103 (1) , 280-289 . |
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Abstract ：
In this paper, rubrene:MoO3 mixed films were deposited on quartz glass and p-Si substrates using thermal evaporation technique. We fabricated the devices based on rubrene:MoO3 mixed films in the form of Al/rubrene:MoO3/p-Si/Al. The electrical characteristics of the rubrene:MoO3 film (with 1:1 weight ratio)-based devices were measured using Hall system. The results indicate the enhanced hole concentration and hole carrier mobility. In addition, the presence of charge transfer complexes leads to an increase of the conductivity and the contact between sample and electrode is almost Ohmic contact. To investigate the effect of MoO3, the rubrene:MoO3 mixed films with different concentrations of MoO3 were deposited using thermal evaporation technique and the Schottky barrier devices based on rubrene:MoO3 mixed films were fabricated. The electrical characteristics demonstrate that the charge transfer complex had been formed when rubrene and MoO3 mixed. Our results demonstrated improvement of the contact between electrode and sample in electronic devices.
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| GB/T 7714 | Li, Ruidong , Deng, Jinxiang , Chen, Liang et al. Preparation and electrical characterization of rubrene:MoO3 film [J]. | EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS , 2022 , 231 (6) : 1215-1219 . |
| MLA | Li, Ruidong et al. "Preparation and electrical characterization of rubrene:MoO3 film" . | EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS 231 . 6 (2022) : 1215-1219 . |
| APA | Li, Ruidong , Deng, Jinxiang , Chen, Liang , Kong, Le , Wang, Xiaolei , Meng, Junhua et al. Preparation and electrical characterization of rubrene:MoO3 film . | EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS , 2022 , 231 (6) , 1215-1219 . |
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Abstract ：
Hall-effect in semiconductors has wide applications for magnetic field sensing. Yet, a standard Hall sensor retains two problems: its linearity is affected by the non-uniformity of the current distribution; the sensitivity is bias-dependent, with linearity decreasing with increasing bias current. In order to improve the performance, we here propose a novel structure which realizes bias-free, photo-induced Hall sensors. The system consists of a semi-transparent metal Pt and a semiconductor Si or GaAs to form a Schottky contact. We systematically compared the photo-induced Schottky behaviors and Hall effects without net current flowing, depending on various magnetic fields, light intensities and wavelengths of Pt/GaAs and Pt/Si junctions. The electrical characteristics of the Schottky photo-diodes were fitted to obtain the barrier height as a function of light intensity. We show that the open-circuit Hall voltage of Pt/GaAs junction is orders of magnitude lower than that of Pt/Si, and the barrier height of GaAs is smaller. It should be attributed to the surface states in GaAs which block the carrier drifting. This work not only realizes the physical investigations of photo-induced Hall effects in Pt/GaAs and Pt/Si Schottky junctions, but also opens a new pathway for bias-free magnetic sensing with high linearity and sensitivity comparing to commercial Hall-sensors.
Keyword ：
photo-induced Hall effect photo-induced Hall effect Schottky junction Schottky junction barrier height barrier height magnetic sensor magnetic sensor
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| GB/T 7714 | Wang Xiaolei , Sun Xupeng , Cui Shuainan et al. Physical Investigations on Bias-Free, Photo-Induced Hall Sensors Based on Pt/GaAs and Pt/Si Schottky Junctions. [J]. | Sensors , 2021 , 21 (9) . |
| MLA | Wang Xiaolei et al. "Physical Investigations on Bias-Free, Photo-Induced Hall Sensors Based on Pt/GaAs and Pt/Si Schottky Junctions." . | Sensors 21 . 9 (2021) . |
| APA | Wang Xiaolei , Sun Xupeng , Cui Shuainan , Yang Qianqian , Zhai Tianrui , Zhao Jinliang et al. Physical Investigations on Bias-Free, Photo-Induced Hall Sensors Based on Pt/GaAs and Pt/Si Schottky Junctions. . | Sensors , 2021 , 21 (9) . |
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Abstract ：
Monoclinic β phase Ga2O3 has been considered as a promising candidate for next generation radio frequency and high-power devices because of its ultrawide bandgap and high breakdown field. The development of epitaxial growth techniques and the synthesis of high quality β-Ga2O3 thin films are crucial for the device applications. In this work, the heteroepitaxial β-Ga2O3 thin films were grown on sapphire (0001) substrates by low pressure chemical vapor deposition. The influence of growth parameters such as the source/substrate temperatures, the oxygen/Ar gas flow rates, and the surface morphology of substrate on the resultant crystallinity and surface roughness of the β-Ga2O3 films were investigated. The β-Ga2O3 heteroepitaxial layer on sapphire exhibits an RMS roughness of 1.82 nm, an XRD rocking curve of 1.18°, and a growth rate of 0.72 μm/h. The β-Ga2O3 film grown on the buffer layer exhibit a smoother surface, whereas the chemical etching and annealing lead to an improved crystallinity and a rough surface. However, there is a trade-off between the crystallization and the surface roughness. © 2021 Elsevier Ltd
Keyword ：
Thin films Thin films Substrates Substrates Low pressure chemical vapor deposition Low pressure chemical vapor deposition Flow of gases Flow of gases Surface roughness Surface roughness Buffer layers Buffer layers Epitaxial growth Epitaxial growth Growth rate Growth rate Morphology Morphology Gallium compounds Gallium compounds Crystallinity Crystallinity Sapphire Sapphire Surface morphology Surface morphology
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| GB/T 7714 | Jiao, Yujia , Jiang, Qian , Meng, Junhua et al. Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition [J]. | Vacuum , 2021 , 189 . |
| MLA | Jiao, Yujia et al. "Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition" . | Vacuum 189 (2021) . |
| APA | Jiao, Yujia , Jiang, Qian , Meng, Junhua , Zhao, Jinliang , Yin, Zhigang , Gao, Hongli et al. Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition . | Vacuum , 2021 , 189 . |
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Abstract ：
An ultrathin-film microring laser was fabricated using inkjet printing and a simple lift-off technique. Whispering-gallery-mode lasing was observed under optically pumped conditions in the film. The freestanding laser can be transferred to arbitrary surfaces for multifunctional applications, such as acoustic and relative humidity sensing. Using the first eigenmode of a membrane vibration, an acoustic sensor with a 0.15 Pa limit of detection was demonstrated via laser bandwidth broadening. A relative humidity sensor with a 1.1% limit of detection via wavelength shifts was demonstrated by placing the device on an optical fiber facet. These cost-effective, transferrable, multifunctional laser sensors will have many additional applications.
Keyword ：
humidity sensing humidity sensing microring laser microring laser acoustic sensing acoustic sensing ultrathin ultrathin transferrable transferrable
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| GB/T 7714 | Xu Zhiyang , Zhai Tianrui , Shi Xiaoyu et al. Multifunctional Sensing Based on an Ultrathin Transferrable Microring Laser. [J]. | ACS applied materials & interfaces , 2021 , 13 (16) : 19324-19331 . |
| MLA | Xu Zhiyang et al. "Multifunctional Sensing Based on an Ultrathin Transferrable Microring Laser." . | ACS applied materials & interfaces 13 . 16 (2021) : 19324-19331 . |
| APA | Xu Zhiyang , Zhai Tianrui , Shi Xiaoyu , Tong Junhua , Wang Xiaolei , Deng Jinxiang . Multifunctional Sensing Based on an Ultrathin Transferrable Microring Laser. . | ACS applied materials & interfaces , 2021 , 13 (16) , 19324-19331 . |
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