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Author:

Wang Wen-Juan (Wang Wen-Juan.) | Li Chong (Li Chong.) | Zhou Hong-Yi (Zhou Hong-Yi.) | Wu Hua (Wu Hua.) | Luan Xin-Xin (Luan Xin-Xin.) | Shi Lei (Shi Lei.) | Guo Xia (Guo Xia.)

Indexed by:

EI Scopus SCIE CSCD

Abstract:

The maximum power conversion efficiencies of the top-emitting, oxide-confined, two-dimensional integrated 2x2 and 4x4 vertical-cavity surface-emitting laser (VCSEL) arrays with the oxide-apertures of 6 mu m, 16 mu m, 19 mu m, 26 mu m, 29 mu m, 36 mu m, 39 mu m, and 46 mu m are fabricated and characterized, respectively. The maximum power conversion efficiencies increase rapidly with the augment of oxide-aperture at the beginning and then decrease slowly. A maximum value of 27.91% at an oxide-aperture of 18.6 mu m is achieved by simulation. The experimental data are well consistent with the simulation results, which are analyzed by utilizing an empirical model.

Keyword:

vertical-cavity surface-emitting laser arrays power conversion efficiency oxide-aperture

Author Community:

  • [ 1 ] [Wang Wen-Juan]Beijing Univ Technol, Inst Elect Informat & Control Engn, Photon Device Res Lab, Beijing 100124, Peoples R China
  • [ 2 ] [Li Chong]Beijing Univ Technol, Inst Elect Informat & Control Engn, Photon Device Res Lab, Beijing 100124, Peoples R China
  • [ 3 ] [Zhou Hong-Yi]Beijing Univ Technol, Inst Elect Informat & Control Engn, Photon Device Res Lab, Beijing 100124, Peoples R China
  • [ 4 ] [Wu Hua]Beijing Univ Technol, Inst Elect Informat & Control Engn, Photon Device Res Lab, Beijing 100124, Peoples R China
  • [ 5 ] [Luan Xin-Xin]Beijing Univ Technol, Inst Elect Informat & Control Engn, Photon Device Res Lab, Beijing 100124, Peoples R China
  • [ 6 ] [Shi Lei]Beijing Univ Technol, Inst Elect Informat & Control Engn, Photon Device Res Lab, Beijing 100124, Peoples R China
  • [ 7 ] [Guo Xia]Beijing Univ Technol, Inst Elect Informat & Control Engn, Photon Device Res Lab, Beijing 100124, Peoples R China

Reprint Author's Address:

  • 郭霞

    [Guo Xia]Beijing Univ Technol, Inst Elect Informat & Control Engn, Photon Device Res Lab, Beijing 100124, Peoples R China

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Source :

CHINESE PHYSICS B

ISSN: 1674-1056

Year: 2015

Issue: 2

Volume: 24

1 . 7 0 0

JCR@2022

ESI Discipline: PHYSICS;

ESI HC Threshold:190

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 4

SCOPUS Cited Count: 5

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 4

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