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Author:

Sun, Fei (Sun, Fei.) | Zhang, Jianxin (Zhang, Jianxin.) | Mao, Shengcheng (Mao, Shengcheng.) (Scholars:毛圣成) | Jiang, Ying (Jiang, Ying.) | Feng, Qiang (Feng, Qiang.) | Shen, Zhenju (Shen, Zhenju.) | Li, Jixue (Li, Jixue.) | Zhang, Ze (Zhang, Ze.) | Han, Xiaodong (Han, Xiaodong.) (Scholars:韩晓东)

Indexed by:

EI Scopus SCIE

Abstract:

Here, we investigate a new type of kink structure that is found at gamma/gamma' interfaces in nickel-based single crystal superalloys. We studied these structures at the atomic and elemental level using aberration corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The core of the dislocation absorbs high-Z elements (i.e., Co and Re) that adopt hexagonal arrangements, and it extrudes elements (i.e., Ni and Al) that adopt face centered cubic (fcc) structures. High-Z elements (i.e., Ta and W) and Cr, which is a low-Z element, are stabilized in body centered cubic (bcc) arrangements; Cr tends to behave like Re. High-Z elements, which migrate and adopt a hexagonal structure, induce kink formation at gamma/gamma' interfaces. This process must be analyzed to fully understand the kinetics and dynamics of creep in nickel-based single crystal superalloys. (C) 2014 Elsevier B.V. All rights reserved.

Keyword:

Microstructure scanning transmission electron microscopy (STEM) Creep High-angle annular dark-field (HAADF) Nickel alloys Interface

Author Community:

  • [ 1 ] [Sun, Fei]Shandong Univ, Minist Educ, Key Lab Liquid Struct & Hered Mat, Jinan 250061, Peoples R China
  • [ 2 ] [Zhang, Jianxin]Shandong Univ, Minist Educ, Key Lab Liquid Struct & Hered Mat, Jinan 250061, Peoples R China
  • [ 3 ] [Mao, Shengcheng]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 4 ] [Han, Xiaodong]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 5 ] [Jiang, Ying]Zhejiang Univ, Ctr Elect Microscopy, Hangzhou 310027, Peoples R China
  • [ 6 ] [Shen, Zhenju]Zhejiang Univ, Ctr Elect Microscopy, Hangzhou 310027, Peoples R China
  • [ 7 ] [Li, Jixue]Zhejiang Univ, Ctr Elect Microscopy, Hangzhou 310027, Peoples R China
  • [ 8 ] [Zhang, Ze]Zhejiang Univ, Ctr Elect Microscopy, Hangzhou 310027, Peoples R China
  • [ 9 ] [Jiang, Ying]Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
  • [ 10 ] [Shen, Zhenju]Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
  • [ 11 ] [Li, Jixue]Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
  • [ 12 ] [Zhang, Ze]Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
  • [ 13 ] [Feng, Qiang]Beijing Univ Sci & Technol, Natl Ctr Mat Serv Safety, Beijing 100083, Peoples R China
  • [ 14 ] [Feng, Qiang]Beijing Univ Sci & Technol, State Key Lab Adv Met & Mat, Beijing 100083, Peoples R China

Reprint Author's Address:

  • [Zhang, Jianxin]Shandong Univ, Minist Educ, Key Lab Liquid Struct & Hered Mat, Jinan 250061, Peoples R China

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Source :

JOURNAL OF ALLOYS AND COMPOUNDS

ISSN: 0925-8388

Year: 2015

Volume: 618

Page: 750-754

6 . 2 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:319

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 14

SCOPUS Cited Count: 16

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 8

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