On　the　basis　of　the　analysis　of　material　gain,　a　comprehensive　optimization　of　quantum　wells　used　in　a　1-mu　m　vertical-external-cavity　surface-emitting　laser　was　carried　out.　For　a　single-well　structure,　the　optimized　width　lies　between　8　and　10　nm,　the　optimized　depth　is　a　quantum　well　with　similar　to　0.1　Al　composition　in　AlGaAs　barrier,　and　the　optimized　configurations　are　graded-index　quantum　well　and　quantum　well　with　AlGaAs　barrier　and　a　GaAs　buffer　layer.　The　optimal　width　of　a　double-　or　triple-well　structure　lies　between　6　and　8　nm.　Compared　to　its　single-　and　triple-well　counterparts,　double-well　structure　provides　higher　gain　and　has　more　tolerance　to　the　deviation　of　laser　wavelength.　(C)　2011　Society　of　Photo-Optical　Instrumentation　Engineers　(SPIE).　[DOI:　10.1117/1.3562569]