InGaAs　strained　quantum　wells　(QWs)　with　GaAs,　AlGaAs,　and　GaAsP　barriers　are　widely　used　in　optically　pumped　vertical-external-cavity　surface-emitting　lasers　operating　at　1　mu　m　wavelength　band.　Compared　with　the　reported　data,　the　model-solid　theory,　which　is　more　suitable　for　the　studied　materials,　is　selected　to　calculate　the　band　offset.　The　band　structures　and　the　gain　characteristics　of　the　three　different　QWs　are　computed　and　compared,　and　the　theoretical　results　are　in　good　agreement　with　the　recent　experimental　reports.　The　numerical　simulation　shows　that　the　QW　with　the　GaAs　barrier　has　the　highest　absorption　but　the　lowest　peak　gain,　while　for　the　AlGaAs　barrier,　it　has　the　lowest　absorption　but　the　highest　peak　gain,　and　for　the　GaAsP　barrier,　it　has　a　moderate　absorption　and　peak　gain.　GaAsP　is　the　most　appropriate　candidate　for　the　barrier　of　InGaAs　strained　QW　when　the　low-threshold,　large-gain,　and　high-temperature　characteristics　are　demanded　simultaneously.