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Abstract:
A compact passively mode-locked semiconductor disk laser with a high repetition frequency of 3GHz is demonstrated. 4.9ps pulse duration and 30mW average output power are obtained with 1.4W of 808nm incident pump power. The gain chip consists of 16 compressively strained InGaAs symmetrical step quantum wells in the active region.
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Year: 2012
Page: 361-364
Language: English
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ESI Highly Cited Papers on the List: 0 Unfold All
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Chinese Cited Count:
30 Days PV: 9
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