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Abstract:
A novel passively mode-locked semiconductor edge-emitting laser is reported, based on an AlGaAs multi-quantum-well structure. Ultra short pulses are generated at 752 nm, with a 19.4-GHz repetition rate and a pulse duration of 3.5 ps. © 2014 IEEE.
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ISSN: 0899-9406
Year: 2014
Page: 137-138
Language: English
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ESI Highly Cited Papers on the List: 0 Unfold All
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30 Days PV: 7
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