ZnO　thin　films　were　grown　by　pulsed　laser　deposition　(PLD)　at　different　substrate　temperature　ranging　from　200　to　700　degrees　C.　X-ray　diffraction　(XRD),　atomic　force　microscope　(AFM),　photoluminescence　(PL)　and　Raman　spectroscopy　are　applied　to　investigate　the　change　of　properties.　The　results　suggest　that　Raman　scattering　is　the　more　effective　technique　to　reveal　the　crystal　quality　of　ZnO　thin　films　compared　with　XRD　and　PL　spectrum.　The　intensity　of　the　UV　emission　peaks　and　XRD　spectrum　suggest　no　much　dependence　on　the　crystal　quality.　The　higher　temperature　of　the　substrate,　the　easier　of　the　defects　will　be　formed　during　the　deposition,　and　optimum　temperature　is　400　degrees　C　in　this　letter.　(c)　2007　Elsevier　B.V.　All　rights　reserved.