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Author:

Bi, Chenghao (Bi, Chenghao.) | Hu, Jingcong (Hu, Jingcong.) | Yao, Zhiwei (Yao, Zhiwei.) | Lu, Yue (Lu, Yue.) (Scholars:卢岳) | Binks, David (Binks, David.) | Sui, Manling (Sui, Manling.) (Scholars:隋曼龄) | Tian, Jianjun (Tian, Jianjun.)

Indexed by:

EI Scopus SCIE

Abstract:

Bright red emission (620-650 nm) from perovskite light-emitting diodes (PeLEDs) is usually achieved via a composition including both bromine and iodine anions, which results in poor performance and stability due to phase separation under operating conditions. Here a large-scale ligand-assisted reprecipitation method is devised with nonpolar solvent that enables the fabrication of CsPbI(3)nanowire clusters, emitting at 600 nm. The blue-shift of this emission relative to that of bulk CsPbI3(approximate to 700 nm) is attributed to quantum confinement in nanowires. The growth of the nanowires is along the [011] crystal direction and is vacancy driven, resulting in the healing of surface defects and thereby a high photoluminescence quantum yield of 91%. The clusters with ultralow trap density show remarkable structural and environmental stability. PeLEDs based on these clusters exhibit an external quantum efficiency of 6.2% with Commission Internationale de l'Eclairage coordinates of (0.66, 0.34), and record luminance of 13 644 cd m(-2)of red electroluminescence. The half-lifetime under an accelerated stability test is 13.5 min for an unencapsulated device in ambient conditions operating at an initial luminance of 11 500 cd m(-2), which corresponds to an estimated half-lifetime of 694 h at 100 cd m(-2)based on acceleration factor obtained by experimental testing.

Keyword:

halide perovskite nanowires scalable synthesis ultralow trap density light-emitting diodes

Author Community:

  • [ 1 ] [Bi, Chenghao]Univ Sci & Technol, Inst Adv Mat & Technol, Beijing 100083, Peoples R China
  • [ 2 ] [Yao, Zhiwei]Univ Sci & Technol, Inst Adv Mat & Technol, Beijing 100083, Peoples R China
  • [ 3 ] [Tian, Jianjun]Univ Sci & Technol, Inst Adv Mat & Technol, Beijing 100083, Peoples R China
  • [ 4 ] [Hu, Jingcong]Beijing Univ Technol, Inst Microstruct & Properties Adv Mat, Beijing Key Lab Microstruct & Properties Solids, Beijing 100124, Peoples R China
  • [ 5 ] [Lu, Yue]Beijing Univ Technol, Inst Microstruct & Properties Adv Mat, Beijing Key Lab Microstruct & Properties Solids, Beijing 100124, Peoples R China
  • [ 6 ] [Sui, Manling]Beijing Univ Technol, Inst Microstruct & Properties Adv Mat, Beijing Key Lab Microstruct & Properties Solids, Beijing 100124, Peoples R China
  • [ 7 ] [Binks, David]Univ Manchester, Dept Phys & Astron, Manchester M13 9PL, Lancs, England
  • [ 8 ] [Binks, David]Univ Manchester, Photon Sci Inst, Manchester M13 9PL, Lancs, England

Reprint Author's Address:

  • 卢岳

    [Tian, Jianjun]Univ Sci & Technol, Inst Adv Mat & Technol, Beijing 100083, Peoples R China;;[Lu, Yue]Beijing Univ Technol, Inst Microstruct & Properties Adv Mat, Beijing Key Lab Microstruct & Properties Solids, Beijing 100124, Peoples R China

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Source :

ADVANCED FUNCTIONAL MATERIALS

ISSN: 1616-301X

Year: 2020

Issue: 48

Volume: 30

1 9 . 0 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:169

Cited Count:

WoS CC Cited Count: 88

SCOPUS Cited Count: 88

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 6

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